May 2005
©2005 Fairchild Semiconductor Corporation FDD5614P Rev C1(W)
FDD5614P
60V P-Channel PowerTrench® MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized
for power management applications.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• –15 A, –60 V. RDS(ON) = 100 mΩ @ VGS = –10 V
R
DS(ON) = 130 mΩ @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage –60 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 3) –15 A
– Pulsed (Note 1a) –45
Power Dissipation for Single Operation (Note 1) 42
(Note 1a) 3.8
PD
(Note 1b) 1.6
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.5 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD5614P FDD5614P 13’’ 12mm 2500 units
FDD5614P
FDD5614P Rev C1(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Av alanche Ratings (Note 1)
WDSS Single Pulse Drain-Source
Avalanche Energy VDD = –30 V, ID = –4.5 A 90 mJ
IAR Maximum Drain-Source Avalanche
Current –4.5 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –60 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = –250 µA, Referenced to 25°C –49 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.6 –3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = –250 µA, Referenced to 25°C
4
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = –10 V, ID = –4.5 A
VGS = –4.5 V, ID = –3.9 A
VGS = –10 V,ID = –4.5 A,TJ=125°C
76
99
137
100
130
185
mΩ
ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V –20 A
gFS Forward Transconductance VDS = –5 V, ID = –3 A 8 S
Dynamic Characteristics
Ciss Input Capacitance 759 pF
Coss Output Capacitance 90 pF
Crss Reverse Transfer Capacitance
VDS = –30 V, V GS = 0 V,
f = 1.0 MHz 39 pF
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 7 14 ns
tr Turn–On Rise Time 10 20 ns
td(off) Turn–Off Delay Time 19 34 ns
tf Turn–Off Fall Time
VDD = –30 V, ID = –1 A,
VGS = –10 V, RGEN = 6 Ω
12 22 ns
Qg Total Gate Charge 15 24 nC
Qgs Gate–Source Charge 2.5 nC
Qgd Gate–Drain Charge
VDS = –30V, ID = –4.5 A,
VGS = –10 V
3.0 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forwar d Current –3.2 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = –3.2 A (Note 2) –0.8 –1.2 V
FDD5614P
FDD5614P Rev C1(W)
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when m ounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
)ON(DS
D
RP
FDD5614P
FDD5614P Rev C1(W)
Typical Characteristics
0
3
6
9
12
15
012345
-VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
-3.0V
-2.5V
-4.0V -4.5V
VGS = -10V
-3.5V
-6.0V
0.8
1
1.2
1.4
1.6
1.8
0246810
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -3.5V
-4.5V
-5.0V
-4.0V
-10V
-6.0V
Figure 1. On-Region Characteristics. F igure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = -4.5A
VGS = -10V
0
0.1
0.2
0.3
0.4
246810
-VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = -2.3 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Va riation with
Temperature. Figure 4. On-Resistance Va riation with
Gate-to-Source Voltage.
0
3
6
9
12
15
12345
-VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA = -55oC
125oC
VDS = -5V 25oC
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
TA = 125oC
25oC
-55oC
VGS = 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD5614P
FDD5614P Rev C1(W)
Typical Characteristics
0
2
4
6
8
10
0481216
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = -4.5A
VDS = -40V
-20V
-30V
0
200
400
600
800
1000
0 102030405060
-VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
CISS
CRSS COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
0.01
0.1
1
10
100
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
10s 1s
100ms
100
µ
s
RDS(ON) LIMIT
VGS = -10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
0.1 1 10 100 1000
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96°C/W
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
r(t), NORMALI Z ED EFFEC TIVE
TRANSIENT THERMAL RESISTANC
E
RθJA(t) = r(t) + RθJA
RθJA = 96°C/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)t1t2
SINGLE PULSE
0.01
0.02
0.0
5
0.1
0.2
D = 0.
5
Figure 11. Transient T hermal Response Cur ve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD5614P
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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