Features e Patented free-floating silicon technology e@ Designed for traction, energy and industrial applications e@ Optimum power handling capability Doc. No. 5SYA 1019-02 Dec.95 Blocking Partnumber | 5STP 18L4200 5STP 18L4000 5STP 18L3600 | Conditions Vorm VrRM 4200 V 4000 V 3600 V f =50Hz, tp =10ms Vrsm1 4600 V 4400 V 4000 V tp= Sms, single pulse lpoRM < 300 mA Vorm IRRM < 300 mA VaR Ty = 125C dvAdterit 1000 V/us @ Exp.to 0.67xVpr Mechanical data Fm | Mounting force nom 50 kN min 45 kN Removable connectors - ETRE Bee apes 100 mis m | Weight 1.35 kg rater mec ost Ds Surface creepage distance 35mm Dz Air strike distance 14mm ABB Semiconductors AG 85ABB Semiconductors AG SSTP 18L4200 On-state Itavm | Max. average on-state current 1850 A Half sine wave, Te= 70C Itrms___| Max. RMS on-state current 2900 A Itsm Max. peak non-repetitive 32000 A tp = 10ms surge current 35000 A tp =8.3ms Pt Limiting load integral 5120 kA?s | fp = 10ms 5000 kA?s | tp = 8.3ms Ty = 125C Vr On-state voltage 1.53 V ly = 2000A Vto Threshold voltage 0.96 V tT Slope resistance 0.285 mQ | /; = 1000 - 3000 A ly Holding current 20-70 MA | Tj = 25C 15-60 mA | Ty = 125C I Latching current 80-300 MA | j= 25C 70-250 mA | Ty = 125C Switching di/dte,it | Critical rate of rise of on-state 100 A/us | Cont. Vp < 0.67X Vora Fy = 125C current Itrm = 3000A f = 50Hz 200 A/us | 60 sec. Io = 20A t= 0.5us ty Delay time < 3.0 us | Vp =0.4xVorm |/rg = 2.0A ,= O.5yus ty Turn-off time < 600 us | Vo $0.67XVprm |/trm = 3000A Jy = 125C dvp /dt=20V/us|Vp > 200V Q Recovery charge min 3500 YAs di,/dt= _ -5 A/us max 5500 yAs Triggering Vet Gate trigger voltage 26V Ty = 25C lor Gate trigger current 400 mA_ | Ty = 25C Vep Gate non-trigger voltage 0.3V Vp = 0.4xVprm ep Gate non-trigger DC current 10 mA | Vp = 0.4xVorm Vecm Peak forward gate voltage 12 V leom Peak forward gate current 10A Vroom Peak reverse gate voltage 10 V Ps Gate power losses 3 W Doc. No. 5SYA 1019-02 Dec.95ABB Semiconductors AG SSTP 18L4200 Thermal Tyjmax |Max. junction temperature 125 C T\jstg | Storage temperature range ~40.. ..150C Rthuc Thermal resistance junction 24 K/kW_ | Anode side cooled to case 24 K/kW | Cathode side cooled 12 K/kW | Double side cooled Rthcu | Thermal resistance case to 10 K/kW | Single side cooled heat sink ; 5 K/kW | Double side cooled Zune (K/KW) 16 Analytical function for transient thermal impedance: n Zinic = > R(1-e"') 14 180 sin add. 1 K/kW 12 180 Mm add. 1 K/kW 120 rm add. 1 K/kW 10 60 mL add. 2 K/kW 8 : 6 i= 4 4 i 1 2 3 4 - R; (KW) | 0.0053 | 0.0051 | 0.0016 oT , ; 10 5 10 5 10 5 10 5 10 5 10 T, (8) 2.1838 | 0.4151 | 0.0324 t(s) Fig.1 Transient thermal impedance, junction to case. l; (A) 4000 3500 3000 2500 I, (kA) 20 18 2000 16 14 1500 12 10 1000 8 6 500 4 2 Oo : . . 0 2.2 0.8 1.0 1.2 1.4 1.6 1.8 2 Ve Ww) 0 1 3 3 4 5 6 7 8 7 V;(V) Fig.2 On-state characteristics. Fig.3 On-state characteristics. Doc. No. 5SYA 1019-02 =Dec.95ABB Semiconductors AG 5STP 18L4200 P, (W) 5600 5200 60 Nn 4800 120 Tr 180 sine 4400 180 N bc 4000 3600 3200 2800 2400 2000 1600 1200 800 400 Ty= 125C 0 500 1000 1500 2000 2500 Irav (A) Tease (C) 130 125 120 115 110 105 100 35 90 85 80 75 70 Double DC 180 1 180 sine 120 I 60 7 SS7P 78L4200 1500 2000 2500 3000 ray (A) Fig.4 On-state power loss vs mean on-state current. Turn-on losses excluded. Fig.6 Max. permissible case temperature vs mean on-state current. 2 2 Irom (KA) I*t(MAs) 60 SSTP 1814200 12 : Pt 1. V_= 0 3. V,= 0 2. Va= O.6XVanw 4. Va O.6XV, 10 8 6 4 2 oO 1 2 5 10 20 50 8100 t, (ms) lrsm (KA) 10 20 50 = 100 ns Fig.6 Surge on-state current vs pulse length. Half-sine wave. Fig.7 Surge on-state current vs number of pulses. Half-sine wave, 10ms, 50Hz. 88 Doc. No. 5SYA 1019-02 Dec.95ABB Semiconductors AG SSTP 18L4200 Veo (VI 4.0 3.0 2.0 1.0 6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 leq (A) Veg (V} 7 see tamax = 100u8 7 7 > 20W ty = Tims 5 = 10me 4 3 2 1 0 0 1 2 3 4 5 6 7 8 8 10 leg (A) Fig.8 Gate trigger characteristics. Fig.9 Max. peak gate power loss. Q WAs) 2 lem = 3000A 10 Ty = Tmax 7 5 4 3 2 10 1 2 3 45 7 10 20 30 -di,/dt (A/ys) law (A) 10 7 Liaw = 3000A 5b] Ta = Trimm 4 3 2 10 7 5 4 3 1 2 3 45 7 10 20 30 -di,/dt (A/ys} Fig.10 Recovery charge vs decay rate of on-stat current. Fig.11 Peak reverse recovery current vs decay rate of on-state current. Doc. No. 5SYA 1019-02 Dec.95 89