DSS4240Y Features Mechanical Data * * * * * * * * * * Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Complementary PNP Type Available (DSS5240Y) Ultra Small Surface Mount Package "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free "Green" Device (Note 2) ESD rating: 400V-MM, 8KV-HBM Qualified to AEC-Q101 Standards for High Reliability * * * SOT363 Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper Plated Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (approximate) C C C E B C C B Top View Pin Out Configuration E Top View Device Schematic Top View Ordering Information (Note 3) Product DSS4240Y-7 Notes: Marking ZN8 Reel size (inches) 7 Tape width (mm) 8mm Quantity per reel 3,000 1. No purposefully added lead. 2. Diode's Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information ZN8 Date Code Key Year Code Month Code 2010 X Jan 1 YM ADVANCE INFORMATION 40V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR 2011 Y Feb 2 DSS4240Y Document number: DS31682 Rev. 2 - 2 Mar 3 ZN8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 5 www.diodes.com Jul 7 2014 B Aug 8 Sep 9 2015 C Oct O Nov N Dec D March 2011 (c) Diodes Incorporated DSS4240Y Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value 40 40 5 2 3 0.3 Unit V V V A A A Symbol PD RJA TJ, TSTG Value 625 200 -55 to +150 Unit mW C/W C Thermal Characteristics Characteristic Power Dissipation (Note 4) @ TA = 25C Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25C Operating and Storage Temperature Range Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 100 IC, COLLECTOR CURRENT (A) 0.8 PD, POWER DISSIPATION (W) 0.6 0.4 RJA = 200C/W 0.2 0 0 50 100 150 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 10 Pw = 100s 1 0.1 0.01 0.001 0.1 1 10 100 VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION Maximum Ratings @TA = 25C unless otherwise specified D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 180C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 T J - T A = P * RJA(t) Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 3 Transient Thermal Response DSS4240Y Document number: DS31682 Rev. 2 - 2 2 of 5 www.diodes.com March 2011 (c) Diodes Incorporated DSS4240Y Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 5) Emitter-Base Breakdown Voltage Max 100 50 100 Unit V V V nA A nA hFE 350 300 300 150 Typ 150 55 8.5 Symbol BVCBO BVCEO BVEBO Collector-Emitter Saturation Voltage (Note 5) VCE(sat) 45 52 100 105 190 70 100 180 180 320 mV Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Output Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time RCE(sat) VBE(sat) VBE(on) Cobo fT ton td tr toff ts tf 100 105 250 64 20 44 315 275 40 200 1.1 0.75 20 m V V pF MHz ns ns ns ns ns ns Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain (Note 5) Notes: Min 40 40 5 Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 150C VEB = 4V, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 750mA, IB = 15mA IC = 1A, IB = 50mA IC = 2A, IB = 200mA IC = 500mA, IB = 50mA IC = 2A, IB = 200mA VCE = 2V, IC = 100mA VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz VCC = 10V IC = 1A, IB1 = -IB2 = 50mA 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2.4 1,200 2.0 1,000 IB = 5mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) ADVANCE INFORMATION Electrical Characteristics @TA = 25C unless otherwise specified IB = 4mA 1.6 IB = 3mA 1.2 IB = 2mA 0.8 VCE = -2V TA = 150C TA = 125C 800 TA = 85C 600 TA = 25C 400 IB = 1mA T A = -55C 0.4 200 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage DSS4240Y Document number: DS31682 Rev. 2 - 2 3 of 5 www.diodes.com 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current March 2011 (c) Diodes Incorporated VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) DSS4240Y 1 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.1 TA = 150C TA = 125C T A = 85C TA = 25C 0.01 TA = -55C 0.001 0.001 1.2 VCE = 2V 1.0 0.8 T A = -55C 0.6 T A = 25C 0.4 T A = 85C T A = 125C 0.2 TA = 150C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.4 180 IC/IB = 10 1.2 150 1.0 CAPACITANCE (pF) VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) ADVANCE INFORMATION IC/IB = 10 0.8 TA = -55C 0.6 T A = 25C TA = 85C 0.4 f = 1MHz 120 90 60 Cibo TA = 125C 0.2 30 T A = 150C 0 0.0001 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current Cobo 0 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (V) Fig. 9 Typical Capacitance Characteristics 40 Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm B C H K J DSS4240Y Document number: DS31682 Rev. 2 - 2 M D F L 4 of 5 www.diodes.com March 2011 (c) Diodes Incorporated DSS4240Y Suggested Pad Layout ADVANCE INFORMATION C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devicesor systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2011, Diodes Incorporated www.diodes.com DSS4240Y Document number: DS31682 Rev. 2 - 2 5 of 5 www.diodes.com March 2011 (c) Diodes Incorporated