DSS4240Y
Document number: DS31682 Rev. 2 - 2 1 of 5
www.diodes.com March 2011
© Diodes Incorporated
ADVANCE INFORMATION
DSS4240Y
40V LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideal for Low Power Amplification and Switching
• Complementary PNP Type Available (DSS5240Y)
• Ultra Small Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin annealed over Copper Plated Alloy
42 leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS4240Y-7 ZN8 7 8mm 3,000
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015
Code X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Top View
Device Schematic Top View
Pin Out Configuration
ZN8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
ZN8
YM
SOT363
C
C
B
C
C
E
C
B
E
DSS4240Y
Document number: DS31682 Rev. 2 - 2 2 of 5
www.diodes.com March 2011
© Diodes Incorporated
ADVANCE INFORMATION
DSS4240Y
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 2 A
Peak Pulse Collector Current ICM 3 A
Peak Base Current IBM 0.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ TA = 25°C PD 625 mW
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C R
θ
JA 200 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0
0.2
0.4
0.6
0.8
050100150200
T , AMBIENT TEMPERA TURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
RC/W
θ
JA
°
= 200
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
CE
0.001
0.01
0.1
1
100
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
10
Pw = 100µs
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig . 3 Transient Therm al Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 180°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
DSS4240Y
Document number: DS31682 Rev. 2 - 2 3 of 5
www.diodes.com March 2011
© Diodes Incorporated
ADVANCE INFORMATION
DSS4240Y
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 40 150 ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5) BVCEO 40 55 ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 5 8.5
⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICBO ⎯
⎯ ⎯
⎯ 100
50 nA
μA VCB = 30V, IE = 0
VCB = 30V, IE = 0, TA = 150°C
Emitter Cutoff Current IEBO ⎯ ⎯ 100 nA
VEB = 4V, IC = 0
DC Current Gain (Note 5) hFE
350
300
300
150
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
Collector-Emitter Saturation Voltage (Note 5) VCE(sat)
⎯
⎯
⎯
⎯
⎯
45
52
100
105
190
70
100
180
180
320
mV
IC = 100mA, IB = 1mA
IC = 500mA, IB = 50mA
IC = 750mA, IB = 15mA
IC = 1A, IB = 50mA
IC = 2A, IB = 200mA
Collector-Emitter Saturation Resistance RCE
(
sat
)
⎯ 105 200 mΩ IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE
(
sat
)
⎯ ⎯ 1.1 V
IC = 2A, IB = 200mA
Base-Emitter Turn On Voltage VBE
(
on
)
⎯ ⎯ 0.75 V
VCE = 2V, IC = 100mA
Output Capacitance Cobo ⎯ ⎯ 20 pF
VCB = 10V, f = 1.0MHz
Current Gain-Bandwidth Product fT 100 250 ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz
Turn-On Time ton ⎯ 64 ⎯ ns
VCC = 10V
IC = 1A, IB1 = -IB2 = 50mA
Delay Time td ⎯ 20 ⎯ ns
Rise Time t
⎯ 44 ⎯ ns
Turn-Off Time toff ⎯ 315 ⎯ ns
Storage Time ts ⎯ 275 ⎯ ns
Fall Time tf ⎯ 40 ⎯ ns
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
0.4
0.8
1.2
1.6
2.0
2.4
012345678910
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
200
400
600
800
1,000
1,200
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = -55°C
A
V = -2V
CE
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
DSS4240Y
Document number: DS31682 Rev. 2 - 2 4 of 5
www.diodes.com March 2011
© Diodes Incorporated
ADVANCE INFORMATION
DSS4240Y
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.0001 0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig . 7 T ypica l Base-Em i tter Turn -On V oltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE -EM I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
0
T = - 55°C
A
V = 2V
CE
T = 25°C
A
T = 150° C
A
T = 125° C
A
T = 85°C
A
0.0001 0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 8 T y pical Base-Emitter Saturation Vo ltage
vs. Col lector Cu r re nt
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
T = -55°C
A
I = 10
CB
/I
T = 25°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A
0
30
60
90
120
150
180
0 5 10 15 20 25 30 35 40
V , REVERSE VOL TAGE (V)
R
Fig. 9 Typical Capacitance Characteristics
C
A
P
A
C
I
T
AN
C
E (pF)
C
ibo
C
obo
f = 1MHz
Package Outline Dimensions
SOT363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Typ
F 0.40 0.45
H 1.80 2.20
J 0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.22
α 0° 8°
All Dimensions in mm
A
M
JL
D
B C
H
K
F
DSS4240Y
Document number: DS31682 Rev. 2 - 2 5 of 5
www.diodes.com March 2011
© Diodes Incorporated
ADVANCE INFORMATION
DSS4240Y
Suggested Pad Layout
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this doc ument and an y product described herein. Diodes Incorporat ed does not assu me any liability arising
out of the application or use of this document or any product descr ibed herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or s ystem whose failure to p erform can be re asonabl y expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
X
Z
Y
C1
C2
C2
G