1N4148W SMALL SIGNAL
FAST SWITCHING DIODE
PRV : 100 Volts
IO : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* Fast switching diodes.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-123 plastic Case
* Weight : approx. 0.01 g
* Marking Code : " W1"
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak Reverse Voltage VRM 100 V
Reverse Voltage VR75 V
Average Rectified Current Half Wave Rectification
with Resist. Load, f ≥ 50 Hz IF(AV) 150 1) mA
Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA
Power Dissipation Ptot 400 1) mW
Thermal Resistance Junction to Ambient Air RthJA 450 1) °C/W
Junction Temperature Tj 150 °C
Storage Temperature Range TSTG -65 to + 150 °C
ELECTRICAL CHARACTERISTICS (Rating at Ta = 25 °C unless otherwise specified)
Parameter Test Condition Symbol Min. Typ. Max. Unit
Forward Voltage IF = 10 mA VF- - 1.0 V
Leakage Current at VR = 20 V IR- - 25 nA
at VR = 75 V IR--5
μA
at VR = 20 V, Tj = 150 °C IR--50
μA
Capacitance VF = VR = 0 V Ctot --4pF
Voltage Rise when tested with 50 mA pulses
Switching On tp = 0.1 μs, Rise Time < 30 ns,
fp = 5 to 100 kHz
Reverse Recovery Time IF = 10 mA, IR = 1 mA,
VR = 6 V, RL = 100 Ω
Rectification Efficiency f = 100 MHz, VRF = 2 V ηv0.45 - - -
Note : (1) Valid provided that electrodes are kept at ambient temperature
Page 1 of 3 Rev. 01 : May 19, 2006
V
trr --4ns
Vfr - - 2.5
1.15
1.05
0.135
0.127
1.65
1.55
3.9
3.7
0.6
0.5
2.7
2.6
Dimensions in millimeters
SOD-123
Certificate TH97/10561QM Certificate TW00/17276EM
Forward charecteristics Dynamic forward resistance
versus forward current
Admissible power dissipation Relative capacitance
versus ambient temperture versus reverse voltage
For conditions, see footnote in table
"Absolute Maximum Ratings"
Page 2 of 3 Rev. 01 : May 19, 2006
RATINGS AND CHARACTERISTIC CURVES (1N4148W)
10-2
10-1
1
10
102
103
0 1 2 V
Tj = 100 °C
Tj = 25 °C
mA
VF
IF
104
103
102
10
1
2
5
2
5
2
5
2
5
10-2 10-1 110 102mA
V
Tj = 25 °C
f = 1 kHz
RF
IF
1000
900
800
700
600
500
400
300
200
100
0
0 100 200 °C
Tamb
Ptot
mW
1.1
1.0
0.9
0.8
0.7
0 2 4 6 8 10 V
VR
Ctot (VR)
Ctot (0 V) Tj = 25 °C
f = 1 kHz
Certificate TH97/10561QM Certificate TW00/17276EM
Leakage Current
versus junction temperature
Admissible repetitive peak forward current versus pulse duration
For conditions, see footnote in table " Absolute Maximum Ratings "
Page 3 of 3 Rev. 01 : May 19, 2006
RATINGS AND CHARACTERISTIC CURVES (1N4148W)
104
2
5
nA
103
2
5
102
2
5
10
2
5
1
0 100 200 °C
Tj
100
10
1
0.110-5 10-4 10-3 10-2 10-1 1 10 s
2
3
4
5
2
3
4
5
2
3
4
5
25 25 25 25 25 25
tp
IR
IFRM
A
n = 0
0.1
0.2
0.5
T
IFRM
tp
t
I
ν= tp/T T= 1/fp
VR = 20 V
Certificate TH97/10561QM Certificate TW00/17276EM
