Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
NPN SILICON GERMANIUM RF TRANSISTOR
NESG250134
NPN SiGe RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)
3-PIN POWER MINIMOLD (34 PACKAGE)
Document No. PU10422EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
The mark shows major revised points.
FEATURES
•This product is suitable for medium output power (800 mW) amplification
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz
•MSG (Maximum Stable Gain) = 23 dB TYP., @ VCE = 3.6 V, Ic = 100 mA, f = 460 MHz
•Using UHS2-HV process (SiGe technology), VCBO (ABSOLUTE MAXIMUM RATINGS) = 20 V
•3-pin power minimold (34 package)
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NESG250134-A
25 pcs (Non reel)
•12 mm wide embossed taping
NESG250134-T1-A
1 kpcs/reel
• Pin 2 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
9.2
V
Emitter to Base Voltage
VEBO
2.8
V
Collector Current
IC
500
mA
Total Power Dissipation
Ptot Note
1.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on 34.2 cm2 0.8 mm (t) glass epoxy PWB
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Data Sheet PU10422EJ02V0DS
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NESG250134
THERMAL RESISTANCE (TA = +25C)
Parameter
Symbol
Ratings
Unit
Termal Resistance from Junction to
Ambient Note
Rthj-a
80
C/W
Note Mounted on 34.2 cm2 0.8 mm (t) glass epoxy PWB
RECOMMENDED OPERATING RANGE (TA = +25C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Collector to Emitter Voltage
VCE
3.6
4.5
V
Collector Current
IC
400
500
mA
Input Power Note
Pin
12
17
dBm
Note Input power under conditions of VCE 4.5 V, f = 460 MHz
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Data Sheet PU10422EJ02V0DS
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NESG250134
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
1
A
Emitter Cut-off Current
IEBO
VEB = 0.5 V, IC = 0 mA
1
A
DC Current Gain
hFE Note 1
VCE = 3 V, IC = 100 mA
80
120
180
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3.6 V, IC = 100 mA, f = 460 MHz
10
GHz
Insertion Power Gain
S21e2
VCE = 3.6 V, IC = 100 mA, f = 460 MHz
19
dB
Maximum Satble Gain
MSG Note
2
VCE = 3.6 V, IC = 100 mA, f = 460 MHz
23
dB
Linner gain (1)
GL
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 0 dBm
16
19
dB
Linner gain (2)
GL
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 0 dBm
16
dB
Output Power (1)
Po
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
27
29
dBm
Output Power (2)
Po
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
29
dBm
Collector Efficiency (1)
c
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 460 MHz, Pin = 15 dBm
60
%
Collector Efficiency (2)
c
VCE = 3.6 V, IC (set) = 30 mA (RF OFF),
f = 900 MHz, Pin = 20 dBm
60
%
Notes 1. Pulse measurement: PW 350
s, Duty Cycle 2%
2. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
SN
hFE Value
80 to 180
S21
S12
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Data Sheet PU10422EJ02V0DS
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TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10422EJ02V0DS
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Remark The graphs indicate nominal characteristics.
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Data Sheet PU10422EJ02V0DS
6
NESG250134
Remark The graphs indicate nominal characteristics.
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Data Sheet PU10422EJ02V0DS
7
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Remark The graphs indicate nominal characteristics.
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Data Sheet PU10422EJ02V0DS
8
NESG250134
PA EVALUATION BOARD (f = 460 MHz)
Notes
1. 38 90 mm, t = 0.8 mm double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
PA EVALUATION CIRCUIT (f = 460 MHz)
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Data Sheet PU10422EJ02V0DS
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COMPONENT LIST
Value
Maker
C1
30 pF
Murata
C2
6 pF
Murata
C3, C4
7 pF
Murata
C5
3 pF
Murata
C6
0.5 pF
Murata
C7
5 pF
Murata
C8
10 pF
Murata
C9, C10
100 nF
Murata
L1
100 nH
Toko
L2
3 nH
Toko
R1
30
SSM
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
Remark The graph indicates nominal characteristics.
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Data Sheet PU10422EJ02V0DS
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DISTORTION EVALUATION BOARD (f = 460 MHz)
Notes
1. 38 90 mm, t = 0.8 mm, double sided copper clad glass epoxy PWB.
2. Back side: GND pattern
3. Solder gold plated on pattern
4. : Through holes
DISTORTION EVALUATION CIRCUIT (f = 460 MHz)
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Data Sheet PU10422EJ02V0DS
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COMPONENT LIST
Value
Maker
C1
47 pF
Murata
C2
12 pF
Murata
C3, C4
7 pF
Murata
C5
3 pF
Murata
C6
6 pF
Murata
C7
0.5 pF
Murata
C8
5 pF
Murata
C9
51 pF
Murata
C10, C12
100 nF
Murata
C11
1
F
Murata
L1
100 nH
Toko
L2
15 nH
Toko
R1
30
SSM
DISTORTION EVALUATION CIRCUIT TYPICAL CHARACTERISTICS
Remark The graph indicates nominal characteristics.
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Data Sheet PU10422EJ02V0DS
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PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (34 PACKAGE) (UNIT: mm)
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