DATA SH EET
Product specification
Supersedes data of 2003 Mar 14 2004 Jun 16
DISCRETE SEMICONDUCTORS
BYD67
Ripple blocking diode
2004 Jun 16 2
Philips Semiconductors Product specification
Ripple blocking diode BYD67
FEATURES
•Glass passivated
•High maximum operating temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy absorption capability
•Shipped in 8 mm embossed tape
•Smallest surface mount rectifier package.
DESCRIPTION
Cavity free cylindrical glass SOD87 package through
Implotec(1) technology.
The SOD87 is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
o
lumns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE NUMBER PACKAGE
NAME DESCRIPTION VERSION
BYD67 −hermetically sealed glass surface mounted package;
Implotec technology; 2 connectors SOD87
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage −300 V
VRcontinuous reverse voltage −300 V
IF(AV) average forward current Ttp =85°C; see Fig.2;
averaged over any 20 ms period;
see also Fig.4
−1.2 A
Tamb =60°C; PCB mounting (see
Fig.8); see Fig.3;
averaged over any 20 ms period;
see also Fig.4
−0.4 A
IFRM repetitive peak forward current Ttp =85°C−11 A
Tamb =60°C−3.7 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj=25°C
prior to surge; VR=V
RRMmax
−5A
Tstg storage temperature −65 +175 °C
Tjjunction temperature −65 +175 °C
2004 Jun 16 3
Philips Semiconductors Product specification
Ripple blocking diode BYD67
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the
‘General Part of associated Handbook.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 1 A; Tj=T
j(max); see Fig.5 −−1.7 V
IF= 1 A; see Fig.5 −−2.3 V
IRreverse current VR=V
RRMmax; see Fig.6 −−1µA
VR=V
RRMmax; Tj= 165 °C;
see Fig.6 −−100 µA
tfr forward recovery time when switched to IF=1A
in 50 ns; see Fig.9 −−350 ns
ton turn-on time when switched from
VF=0VtoV
F= 3 V; measured
between 10 % and 90 % of
IFmax; see Fig.10
500 −−ns
trr reverse recovery time when switched from IF= 0.5 Ato
IR= 1 A; measured at
IR= 0.25 A; see Fig.11
−−150 ns
Cddiode capacitance f = 1 MHz; VR= 0 V; see Fig.7 −17 −pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-tp) thermal resistance from junction to tie-point 30 K/W
Rth(j-a) thermal resistance from junction to ambient note 1 150 K/W
2004 Jun 16 4
Philips Semiconductors Product specification
Ripple blocking diode BYD67
GRAPHICAL DATA
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point
temperature (including losses due to
reverse leakage).
handbook, halfpage
0 200
2.0
0
0.4
MGM273
0.8
1.2
1.6
40 80 120 160
IF(AV)
(A)
Ttp (°C)
Fig.3 Maximum permissible average forward
current as a function of ambient
temperature (including losses due to
reverse leakage).
handbook, halfpage
0
0.6
0.4
0.2
020040 80 120 160
MGM272
IF(AV)
(A)
Tamb (°C)
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in 4.
Switched mode application.
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.4 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
handbook, halfpage
02
5
0
1
MGM271
2
3
4
0.8 1.2 1.60.4
P
(W)
IF(AV) (A)
1.42
a = 3 2.5 2 1.57
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.5 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
054
6
0
2
4
MLC301
231
IF
(A)
V (V)
F
2004 Jun 16 5
Philips Semiconductors Product specification
Ripple blocking diode BYD67
VR=V
RRMmax.
Fig.6 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
103
102
10
1200
0
MGA853
100 T ( C)
jo
IR
( A)µ
f = 1 MHz; Tj=25°C.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MLC305
10 102103
1
102
10
V (V)
R
Cd
(pF)
MSB213
4.5
2.5
1.25
50
50
Fig.8 Printed-circuit board for surface mounting.
Dimensions in mm.
handbook, halfpage
t
tfr
10%
IF
t
90% 100%
VF
MGD600
Fig.9 Forward recovery time definition.
2004 Jun 16 6
Philips Semiconductors Product specification
Ripple blocking diode BYD67
Fig.10 Test circuit and turn-on time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤10 ns.
handbook, full pagewidth
MBH530
50 Ω10 Ω
DUT
0
IF
(A)
VF
(V)
0
100%
90%
10%
3V
ton
Fig.11 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
2004 Jun 16 7
Philips Semiconductors Product specification
Ripple blocking diode BYD67
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD87 100H03 99-03-31
99-06-04
Hermetically sealed glass surface mounted package;
ImplotecTM(1) technology; 2 connectors SOD87
UNIT D
mm 2.1
2.0 2.0
1.8 3.7
3.3 0.3
D1 HL
DIMENSIONS (mm are the original dimensions) H
DD1
LL
(2)
0 1 2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
ka
2004 Jun 16 8
Philips Semiconductors Product specification
Ripple blocking diode BYD67
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL DATA SHEET
STATUS(1) PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any otherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands R72/04/pp9 Date of release: 2004 Jun 16 Document order number: 9397 750 13373
