2N3740 a CaM = PAEICAEN ug DB NEW ENGLAND SEMICONDUCTOR *also available as JAN, JANTX, JANTXV MEDIUM-POWER PNP TRANSISTORS ..ideal for use as drivers, switches and medium-power amplifier application. These devices POWER TRANSISTOR feature: PNP SILICON 60 - 80 VOLTS Low Saturation Voltage - 0.6 Vg (at) @ 1, = 1.0 Amp 25 WATTS High Gain Characteristics - hr; @ Ic = 250 mA: 30 - 100 Excellent Safe Area Limits (See Figure 2) Low Collector Cutoff Current - 100 nA (Max) 2N3740, 2N3741A Complementary to NPN 2N3766 (2N3740) and 2N3767 (2N3741) MAXIMUM RATINGS 2N3741 Rating Symbol 2N3740 2N3741A Unit Collector-Emitter Voltage Vero 60 80 Vde Emitter-Base Voltage Ves 7.0 7.0 Vde Collector-Base Voltage Vos 60 80 Vde Collector Current - Continuous Ic 4.0 Adc - Peak (1) 10 Base Current I 2.0 Ade Total Power Dissipation Pp @T,=25C 25 Watts Derate above 25C 0.143 wc Operating and Storage Junction Ty, Tug -65 to +200 "C Temperature Range (1) See Figure 2 PEN 1, BASE 2. EMITTER CASE: COLLECTOR Figure 1 - POWER-TEMPERATURE DERATING CURVE 25 Ee E 1 8 = 1 = & 5 All JEDEC Dimensions and and Notes Apply. CASE 80-02 JO-213AA 0 (TO-66} 0 25 50 75 100 125 150 175 200 Tc CASE TEMPERATURE (C) Safe Area Curves are indicated by Figure 2. Both limits are applicable and must be observed. 6 Lake Street Lawrence,MA 01841 NEW ENGLAND SEMICONDUCTOR 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-340 REV: --2N3740* uw 2N3741* 2N3741A | i hd NEW ENGLAND SEMICONDUCTOR *also available as JAN, JANTX, ; JANTXV ELECTRICAL CHARACTERISTICS (Tc = 25 C unless otherwise noted) | Characteristics | Symbol [| Min | Max | Unit | OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage 2N3740 Vexocsus) 60 Vdc I, =100 mAdc, I, =0 2N3741, 2N3741A 80 Emitter-Base Cutoff Current 2N3740, 2N3741 Teno 0.5 mAde Veg = 7.0 Vde 2N3741A 100 nAdc Collector Cutoff Current Icgx Vog= 60 Vde, Vez = 1.5 Vde 2N3740 100 | pAdc Vop= 80 Vde, Vgpom = 1.5 Vde 2N3741 100 | pAdc 2N3741A 100 nAdc Voe= 40 Vde, Vagem = 1.5 Vde, Te = 150C 2N3740 1.0 mAdc Veu= 60 Vde, Varyom= 1.5 Vde, Te = 150C 2N3741 1.0 | mAdc 2N3741A 0.5 Collector-Emitter Cutoff Current Igo Vcp = 40 Vde, Ip= 0 2N3740 1.0 mAdc Veg =60 Vde, Ig= 0 2N3741 1.0 | mAdc 2N3741A 1.0 pAdc Collector-Base Cutoff Current lego Vaan 60 Vde, Ip= 0 2N3740 100 pAdc = 80 Vdc, I, = 0 2N3741 100 pAdc 2N3741A 100 nAdc ON CHARACTERISTICS (1) DC Current Gain hep I, = 100 mAdc, Ve, = 1.0 Vde 40 Ie = 250 mAdc, Veg = 1.0 Vde 30 100 Ic = 500 mAdc, Veg = 1.0 Vde 20 Io= 1.0 Ade, Vog = 1.0 Vde 10 Collector-Emitter Saturation Voltage Venisa) 0.6 Vde = 1.0 Adc, I, = 125 mAde Base-Emitter Voltage Vee 1.0 Vde I= 250 mAde, Veg = 1.0 Vde TRANSIENT CHARACTERISTICS Current-Gain--Bandwidth Product fT MHz Ie = 100 mAdc, Veg = 10 Vde, f= 1.0 MHz 3.0 Common-Base Output Capacitance Cop 100 p. Vep = 10 Vde, I. =0, f= 100 kHz Small-Signal Current Gain he, 25 1, = 50 mAdc, Voz = 10 Vde, f= 1.0 kHz (1)Pulse Test: Pulse Width < 300ps, Duty Cycle < 2.0%. FIGURE 2 ACTIVE REGION SAFE OPERATING AREA 50 3 5 The Safe Operating Area Curves indicste Ic Vc limits below 5 which the device will not enter secondary breakdown. Collector = 10 toad lines for specific circuits must fall within the applicable Safe 3 07 T= 208C Area to avoid causing a catastrophic failure. To insure operation zo. = i 2 os SECONDARY BR x below the maximum Ty, power-temperature derating must be ob- & 0. EARDOW served for both steady state and pul: i . v 03 THERMAL LIMITATION . pulse Power conditions . DISSIPATION IS 02 SIGNIFICANT ABOVE Ic = PULSE DUTY CYCLES 10% Ol 10 20 30 50 70 10 20 50 70 100 Voce. COLLECTOR-EMITTER VOLTAGE (VOLTS) 6 Lake Street Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / FAX: (978) 689-0803 T4-4.8-860-340 REV: -- NEW ENGLAND SEMICONDUCTOR