ATP102 Ordering number : ENA1479A SANYO Semiconductors DATA SHEET ATP102 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * Low ON-resistance Slim package Halogen free compliance * * * Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V 20 V --40 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS IAV 58 mJ 20 A Drain Current (PW10s) Avalanche Current *2 PW10s, duty cycle1% Tc=25C --120 A 40 W C Note : *1 VDD=10V, L=200H, IAV=20A *2 L200H, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 * Package : ATPAK * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel ATP102-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP102 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 0.8 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 1.7 4,2 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 61312 TKIM/52709PA MSIM TC-00001968 No.A1479-1/7 ATP102 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Conditions Ratings min --30 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--20A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--20A, VGS=--10V ID=--10A, VGS=--4.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Rise Time Turn-OFF Delay Time typ Unit max V --1 A 10 A --2.6 29 V S 14 18.5 m 22 31 m 1490 pF 360 pF Crss 270 pF td(on) tr 11 ns 135 ns 135 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--40A 185 ns 34 nC 4.2 nC 11.5 IS=--40A, VGS=0V --0.99 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --20A RL=0.75 VIN D PW=10s D.C.1% VOUT G ATP102 P.G 50 S Ordering Information Device ATP102-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1479-2/7 ATP102 --6 .0V --8.0 V V --4.0 --10 --30 --25 --20 --15 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 --1.8 35 30 25 --20A 20 15 10 Gate-to-Source Voltage, VGS -- V C 25 C 5 10 = Tc 7 --2 75 C 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 7 --3.0 --3.5 --4.0 --4.5 30 A 25 = VGS 20 10 = -, ID V 5 . --4 A --20 V, I D= --10 V GS= 15 10 5 --40 --20 0 20 40 60 80 100 120 140 IS -- VSD --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V IT14691 SW Time -- ID 160 IT14690 VGS=0V Single pulse --0.01 7 5 3 2 --0.001 --0.3 --1.2 IT14692 Ciss, Coss, Crss -- VDS 5 VDD= --15V VGS= --10V --5.0 IT14688 35 --100 7 5 3 2 f=1MHz 3 3 2 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 5 7 --100 --2.5 Case Temperature, Tc -- C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 --2.0 Single pulse 0 --60 VDS= --10V Single pulse 2 --1.5 RDS(on) -- Tc IT14689 | yfs | -- ID 5 --1.0 Gate-to-Source Voltage, VGS -- V 5 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 7 --0.5 40 40 ID= --10A 0 IT14687 Tc=25C Single pulse 45 0 --2.0 25 C --0.4 5C --0.2 Tc= 7 0 --5 Static Drain-to-Source On-State Resistance, RDS(on) -- m 0 Tc=25C Single pulse 25 C --10 --5 Tc= --2 75 5C C --15 --35 --25 C VGS= --3.5V V --20 --45 Drain Current, ID -- A --25 VDS= --10V Single pulse --40 --10.0 V --30 V .5 --4 --16. 0 Drain Current, ID -- A --35 ID -- VGS --50 Tc= --25 C 75 C 25 C ID -- VDS --40 td(off) tf 100 7 5 tr 3 2 Ciss 1000 7 5 Coss Crss 3 2 td(on) 100 10 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT14693 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14694 No.A1479-3/7 ATP102 VGS -- Qg --10 --100 7 5 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 --7 --6 --5 --4 --3 3 2 10 15 20 25 30 Total Gate Charge, Qg -- nC PD -- Tc 40 30 25 20 15 10 5 0 20 40 60 80 100 2 3 5 7 --1.0 120 Case Temperature, Tc -- C 140 160 IT14697 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14696 EAS -- Ta 120 35 1m s 1 10 0m 0m s DC s op er ati on Tc=25C Single pulse IT14695 40 0 Operation in this area is limited by R DS (on). --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 35 ID = --40A 3 2 --1 5 PW10s 10 s 100 s --10 7 5 --1.0 7 5 0 IDP = --120A 3 2 --2 0 ASO 3 2 VDS= --15V ID= --40A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT10478 No.A1479-4/7 ATP102 Taping Specification ATP102-TL-H No.A1479-5/7 ATP102 Outline Drawing ATP102-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1479-6/7 ATP102 Note on usage : Since the ATP102 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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