ATP102-TL-H - ON Semiconductor

ATP102

No.A1479-1/7

1 : Gate

2 : Drain

3 : Source

4 : Drain

SANYO : ATPA

0.7

0.4

0.55

9.5

7.3 0.5

1.7

4.6

6.05

6.5

0.6

0.8

0.5

1.5

0.4 2.6

4.6

0.4

0.1

2.3 2.3

Features

• Low ON-resistance • Large current

• Slim package • 4.5V drive

• Halogen free compliance • Protection diode in

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --30 V

Gate-to-Source Voltage VGSS ±20 V

Drain Current (DC) ID--40 A

Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% --120 A

Allowable Power Dissipation PDTc=25°C40W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Avalanche Energy (Single Pulse) *1 EAS 58 mJ

Avalanche Current *2 IAV 20 A

Note :

*1 VDD=10V, L=200μH, IAV=20A

*2 L≤200μH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

61312 TKIM/52709PA MSIM TC-00001968

SANYO Semiconductors

DATA SHEET

ATP102

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

Ordering number : ENA1479A

ATP102-TL-H

Product & Package Information

• Package : ATPAK

• JEITA, JEDEC : -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL Marking

Electrical Connection

ATP102

LOT No.

4,2

ATP102

No.A1479-2/7

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions Ratings Unit

min typ max

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V

Zero-Gate Voltage Drain Current IDSS V

DS=--30V, VGS=0V --1 μA

Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA

Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V

Forward Transfer Admittance | yfs |VDS=--10V, ID=--20A 29 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=--20A, VGS=--10V 14 18.5 mΩ

RDS(on)2 ID=--10A, VGS=--4.5V 22 31 mΩ

Input Capacitance Ciss VDS=--10V, f=1MHz 1490 pF

Output Capacitance Coss 360 pF

Reverse Transfer Capacitance Crss 270 pF

Turn-ON Delay Time td(on)

See speciﬁ ed Test Circuit.

11 ns

Rise Time tr 135 ns

Turn-OFF Delay Time td(off) 135 ns

Fall Time tf185 ns

Total Gate Charge Qg VDS=--15V, VGS=--10V, ID=--40A 34 nC

Gate-to-Source Charge Qgs 4.2 nC

Gate-to-Drain “Miller” Charge Qgd 11.5 nC

Diode Forward Voltage VSD IS=--40A, VGS=0V --0.99 --1.5 V

Switching Time Test Circuit

Ordering Information

Device Package Shipping memo

ATP102-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G 50Ω

ID= --20A

RL=0.75Ω

VDD= --15V

VOUT

VIN

--10V

VIN

ATP102

No.A1479-3/7

| yfs | -- ID

RDS(on) -- VGS RDS(on) -- Tc

ID -- VDS ID -- VGS

IS -- VSD

SW Time -- ID

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V Case Temperature, Tc -- °C

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Drain Current, ID -- A

Switching Time, SW Time -- ns

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- pF

Diode Forward Voltage, VSD -- V

Source Current, IS -- A

Forward T ransfer Admittance, | yfs | -- S

Ciss, Coss, Crss -- VDS

IT14690

IT14687

--60 --40 --20 160

0 --30--10 --15 --20 --25--5

1000

100

IT14694

IT14692

IT14691

--0.1 --1.0

23 57

--1.2--1.0 --1.1--0.6--0.5--0.4 --0.8 --0.9--0.7--0.3

--0.001

--0.01

--0.1

--1.0

--10

--100

1.0

2--10

357 --100

5723

--0.1 --1.0

23 57 2 --10

357 --100

5723

0 20 40 60 80 100 120 140

75°C

25°C

Tc= --25

--25°C

Tc=75

Single pulse

Tc= --25°C

75°C

Tc=75

--25°C

Ciss

Crss

IT14693

100

td(off)

VDD= --15V

VGS= --10V f=1MHz

--0.6--0.4--0.2 --0.8 --1.0 --1.2 --2.0--1.4 --1.6 --1.80

--5

--10

--40

--35

--25

--30

--15

--20

--5

--10

--50

--35

--40

--30

--25

--45

--20

--15

IT14689

--2--1 --4--3 --6--5 --8 --9--7 --10 --11 --16--12 --14 --15--13 0

IT14688

--0.5 --1.5 --2.0--1.0 --2.5 --4.5--4.0 --5.0--3.5--3.00

--4.0V

VGS= --3.5V

--16.0V

VDS= --10V

Single pulse

25°C

VGS= --4.5V, ID= --10A

VGS= --10V, ID= --20A

--8.0V

Coss

td(on)

--4.5V

--6.0V

--10.0V

ID= --10A --20A

VDS= --10V

Single pulse

Tc=25°C

Single pulse

VGS=0V

Single pulse

Tc=25°C

Single pulse

ATP102

No.A1479-4/7

VGS -- Qg

Total Gate Charge, Qg -- nC

Gate-to-Source Voltage, VGS -- V

EAS -- Ta

Avalanche Energy derating factor -- %

Ambient Temperature, T a -- °C

025 50 75 100 125 150

100

120

175

IT10478

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

PD -- Tc

Allowable Power Dissipation, PD -- W

Case Temperature, Tc -- °C

IT14695

0 5 10 2520 353015 40

--2

--4

--6

--1

--3

--5

--8

--7

--9

--10 VDS= --15V

ID= --40A

IT14697

020 40 60 80 100 140120

160

IDP= --120A

ID= --40A

1ms

10ms

100ms

DC operation

Operation in

this area is

limited by RDS(on).

100

IT14696

--0.1

--1.0

--10

--0.1 --1.0

23 57 2 --10

357 235

--100

Tc=25°C

Single pulse

PW≤10μs

ATP102

No.A1479-5/7

Taping Speciﬁ cation

ATP102-TL-H

ATP102

No.A1479-6/7

Outline Drawing Land Pattern Example

ATP102-TL-H

Mass (g) Unit

0.266

* For reference

mm Unit: mm

6.5

6.71.6 2

2.3 2.3

1.5

ATP102

PS No.A1479-7/7

This catalog provides information as of June, 2012. Speciﬁ cations and information herein are subject

to change without notice.

Note on usage : Since the ATP102 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment. The products mentioned herein

shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for new introduction or other application

different from current conditions on the usage of automotive device, communication device, office equipment,

industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)

prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be

solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer's

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

Co.,Ltd. products described or contained herein.

Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,

high current, high voltage, or drastic temperature change, even if it is used within the range of absolute

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