Philips Semiconductors Product specification
74ABT20Dual 4-input NAND gate
1
1995 Sep 22 853-1811 15793
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS
Tamb = 25°C;
GND = 0V TYPICAL UNIT
tPLH
tPHL
Propagation
delay
An, Bn, Cn, Dn
to YnCL = 50pF;
VCC = 5V
2.7
2.2 ns
tOSLH
tOSHL Output to
Output skew
CC
0.3 ns
CIN Input
capacitance VI = 0V or VCC 3pF
ICC Total supply
current Outputs disabled;
VCC = 5.5V 50 µA
PIN CONFIGURATION
14
13
12
11
10
9
87
6
5
4
3
2
1
GND
VCC
B1
A1
Y1
NC
D1
C1
A0
B0
Y0
NC
C0
D0
SA00350
PIN DESCRIPTION
PIN
NUMBER SYMBOL NAME AND FUNCTION
1, 2, 4, 5, 9,
10, 12, 13 An, Bn,
Cn, Dn Data inputs
6, 8 Yn Data outputs
7 GND Ground (0V)
14 VCC Positive supply voltage
LOGIC SYMBOL
D0 A1 B1A0 B0 C0 C1 D1
Y0Y1
68
12 459101213
V
CC = Pin 14
GND = Pin 7
SA00351
LOGIC DIAGRAM
VCC = Pin 14
GND = Pin 7
SA00352
Y0
6
1
2
4
A0
B0
C0 5
D0
Y1
8
9
10
12
A1
B1
C1 13
D1
LOGIC SYMBOL (IEEE/IEC)
SF00068
&
6
8
1
2
4
5
9
10
12
13
FUNCTION TABLE
INPUTS OUTPUT
An Bn Cn Dn Yn
L X X X H
X L X X H
X X L X H
X X X L H
HHHH L
NOTES:
H = High voltage level
L = Low voltage level
X = Don’t care
ORDERING INFORMATION
PACKAGES TEMPERATURE RANGE OUTSIDE NORTH AMERICA NORTH AMERICA DWG NUMBER
14-Pin Plastic DIP –40°C to +85°C74ABT20 N 74ABT20 N SOT27-1
14-Pin plastic SO –40°C to +85°C74ABT20 D 74ABT20 D SOT108-1
14-Pin Plastic SSOP Type II –40°C to +85°C74ABT20 DB 74ABT20 DB SOT337-1
14-Pin Plastic TSSOP Type I –40°C to +85°C74ABT20 PW 74ABT20PW DH SOT402-1
Philips Semiconductors Product specification
74ABT20Dual 4-input NAND gate
1995 Sep 22 2
ABSOLUTE MAXIMUM RATINGS1, 2
SYMBOL PARAMETER CONDITIONS RATING UNIT
VCC DC supply voltage –0.5 to +7.0 V
IIK DC input diode current VI < 0 –18 mA
VIDC input voltage3–1.2 to +7.0 V
IOK DC output diode current VO < 0 –50 mA
VOUT DC output voltage3output in Off or High state –0.5 to +5.5 V
IOUT DC output current output in Low state 40 mA
Tstg Storage temperature range –65 to 150 °C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150°C.
3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL
PARAMETER
MIN MAX
UNIT
VCC DC supply voltage 4.5 5.5 V
VIInput voltage 0 VCC V
VIH High-level input voltage 2.0 V
VIL Low-level input voltage 0.8 V
IOH High-level output current –15 mA
IOL Low-level output current 20 mA
∆t/∆vInput transition rise or fall rate 0 10 ns/V
Tamb Operating free-air temperature range –40 +85 °C
DC ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL PARAMETER TEST CONDITIONS Tamb = +25°CTamb = –40°C
to +85°CUNIT
MIN TYP MAX MIN MAX
VIK Input clamp voltage VCC = 4.5V ; IIK = –18mA –0.9 –1.2 –1.2 V
VOH High-level output voltage VCC = 4.5V ; IOH = –15mA; VI = VIL or VIH 2.5 2.9 2.5 V
VOL Low-level output voltage VCC = 4.5V ; IOL = 20mA; VI = VIL or VIH 0.35 0.5 0.5 V
IIInput leakage current VCC = 5.5V; VI = GND or 5.5V ±0.01 ±1.0 ±1.0 µA
IOFF Power-of f leakage current VCC = 0.0V ; V O or VI ≤ 4.5V ±5.0 ±100 ±100 µA
ICEX Output High leakage current VCC = 5.5V ; V O = 5.5V; VI = GND or VCC 5.0 50 50 µA
IOOutput current1VCC = 5.5V; VO = 2.5V –50 –75 –180 –50 –180 mA
ICC Quiescent supply current VCC = 5.5V ; V I = GND or VCC 250 50 µA
∆ICC Additional supply current per
input pin2VCC = 5.5V ; One data input at 3.4V, other
inputs at VCC or GND 0.25 500 500 µA
NOTES:
1. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
2. This is the increase in supply current for each input at 3.4V.
3. For valid test results, data must not be loaded into the flip-flop or latch after applying the power.
Philips Semiconductors Product specification
74ABT20Dual 4-input NAND gate
1995 Sep 22 3
AC CHARACTERISTICS
GND = 0V ; tR = tF = 2.5ns; CL = 50pF, RL = 500Ω
SYMBOL
PARAMETER
LIMITS
UNIT
SYMBOL PARAMETER WAVEFORM Tamb = +25°C
VCC = +5.0V Tamb = –40°C to +85°C
VCC = +5.0V ±0.5V UNIT
MIN TYP MAX MIN MAX
tPLH
tPHL Propagation delay
An, Bn, Cn, Dn to Yn11.0
1.0 2.7
2.2 3.9
3.4 1.0
1.0 4.6
3.8 ns
tOSHL
tOSLH1Output to Output skew
An or Bn to Yn2 0.3 0.5 0.5 ns
NOTE:
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same
device. The specification applies to any outputs switching in the the same direction, either HIGH–to-LOW (tOSHL) or LOW-to-HIGH (tOSLH);
parameter guaranteed by design.
AC WAVEFORMS
VM = 1.5V, VIN = GND to 3.0V
VM
VM
VM
VM
Yn
An, Bn,
Cn, Dn
tPHL tPLH
SA00353
W aveform 1. Propagation Delay for Inverting Outputs
OUTPUT N
same part
INPUT
SA00381
OUTPUT
tPLH
MIN
tPHL
MIN
tPLH MAX tPHLMAX
tOSLH tOSHL
W aveform 2. Common edge skew
TEST CIRCUIT AND WAVEFORMS
PULSE
GENERATOR
RT
VIN D.U.T. VOUT
CLRL
VCC
Test Circuit for Outputs
VMVM
tWAMP (V)
NEGATIVE
PULSE 10% 10%
90% 90%
0V
VMVM
tW
AMP (V)
POSITIVE
PULSE
90% 90%
10% 10% 0V
tTHL (tF)
tTLH (tR)t
THL (tF)
tTLH (tR)
VM = 1.5V
Input Pulse Definition
DEFINITIONS
RL = Load resistor; see AC CHARACTERISTICS for value.
CL = Load capacitance includes jig and probe capacitance;
see AC CHARACTERISTICS for value.
RT = Termination resistance should be equal to ZOUT of
pulse generators.
INPUT PULSE REQUIREMENTS
FAMILY
74ABT
SH00067
Amplitude Rep. Rate tWtF
3.0V 1MHz 500ns 2.5ns
tR
2.5ns