STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data Features TAB * Maximum junction temperature: TJ = 175 C * High speed switching series * Minimized tail current 3 2 * VCE(sat) = 1.55 V (typ.) @ IC = 20 A 1 TO-3P * Tight parameters distribution * Safe paralleling 1 2 3 3 2 1 1 TO-247 * Low thermal resistance * Lead free package TO-3PF Applications Figure 1. Internal schematic diagram C (2, TAB) * Photovoltaic inverters * High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. G (1) E (3) Table 1. Device summary Order codes Marking Package Packaging STGFW20H65FB GFW20H65FB TO-3PF Tube STGW20H65FB GW20H65FB TO-247 Tube STGWT20H65FB GWT20H65FB TO-3P Tube August 2014 This is information on a product in full production. DocID026826 Rev 1 1/20 www.st.com 20 Contents STGFW20H65FB, STGW20H65FB, STGWT20H65FB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 2/20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 TO-3PF, STGFW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.2 TO-247, STGW20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.3 TO-3P, STGWT20H65FB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 DocID026826 Rev 1 STGFW20H65FB, STGW20H65FB, STGWT20H65FB 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-247 TO-3PFP TO-3P VCES Unit Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 C 40 A IC Continuous collector current at TC = 100 C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage 20 V PTOT Total dissipation at TC = 25 C TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C TJ 168 52 W 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Value Symbol Parameter TO-247 TO-3PF RthJC Thermal resistance junction-case RthJA Thermal resistance junction-ambient DocID026826 Rev 1 Unit TO-3P 2.9 0.9 50 C/W C/W 3/20 Electrical characteristics 2 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.55 VGE = 15 V, IC = 20 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 20 A TJ = 175 C VGE(th) Max. 650 VGE = 15 V, IC = 20 A VCE(sat) Typ. 2 1.65 V 1.75 5 6 7 V VCE = 650 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/20 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 520 V, IC = 20 A, VGE = 15 V, see Figure 27 Qge Gate-emitter charge Qgc Gate-collector charge DocID026826 Rev 1 Min. Typ. Max. Unit - 2764 - pF - 80 - pF - 60 - pF - 120 - nC - 20 - nC - 50 - nC STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 30 - ns Current rise time - 11 - ns - 1400 - A/s 139 - ns - 20 - ns Turn-on current slope VCE = 400 V, IC = 20 A, RG = 10 , VGE = 15 V, see Figure 26 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 77 - J Eoff(2) Turn-off switching losses - 170 - J Total switching losses - 247 - J Turn-on delay time - 29 - ns Current rise time - 12 - ns Turn-on current slope - 1352 - A/s - 147 - ns - 38 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 20 A, RG = 10 , VGE = 15 V, TJ = 175 C, see Figure 26 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 88 - J Eoff(2) Turn-off switching losses - 353 - J Total switching losses - 441 - J Ets 1. Parameter Energy losses include reverse recovery of the external diode. Turn-on times and energy have been measured applying as freewheeling an external SiC diode STPSC206W 2. Turn-off losses include also the tail of the collector current. DocID026826 Rev 1 5/20 Electrical characteristics 2.1 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics (curve) Figure 2. Output characteristics (TJ = 25C) GIPG260820141108FSR IC (A) 70 VGE =15 V 13V GIPG260820141120FSR IC (A) VGE =15 V 80 13V 11V 11V 60 Figure 3. Output characteristics (TJ = 175C) 9V 60 50 50 40 40 30 30 20 20 10 10 9V 7V 7V 0 0 2 1 3 4 Figure 4. Transfer characteristics GIPG260820141127FSR IC (A) 0 0 VCE(V) 25 C 2 1 3 4 VCE(V) Figure 5. Collector current vs. case temperature for TO-247 and TO-3P GIPG260820141136FSR IC (A) 40 70 VCE =10 V 175 C 60 30 50 20 40 30 10 20 VGE 15V, TJ 175 C 10 7 8 9 10 VGE(V) Figure 6. Collector current vs. case temperature for TO-3PF GIPG260820141147FSR IC (A) 0 0 50 75 100 125 150 GIPG260820141153FSR VCE(sat) (V) 25 20 2.0 15 1.8 10 1.6 VGE= 15V IC= 40A IC= 20A 1.4 IC= 10A VGE 15V, TJ 175 C 0 0 6/20 TC(C) Figure 7. VCE(sat) vs. junction temperature 2.2 5 25 25 50 75 100 125 150 TC(C) 1.2 -50 DocID026826 Rev 1 0 50 100 150 TJ(C) STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 8. Power dissipation vs. case temperature for TO-247 and TO-3P Figure 9. Power dissipation vs. case temperature for TO-3PF GIPG280120141359FSR Ptot (W) 160 Electrical characteristics GIPG260820141204FSR Ptot (W) 50 140 120 40 100 30 80 60 20 40 20 0 0 10 VGE 15V, TJ 175 C 25 50 VGE 15V, TJ 175 C 0 0 75 100 125 150 175 TC(C) 25 75 100 125 150 175 TC(C) 50 Figure 10. Forward bias safe operating area for Figure 11. Forward bias safe operating area for TO-247 and TO-3P TO-3PF GIPG260820141333FSR IC (A) 10 1 10 10 s 10 s 100 s 100 s 1 ms 1 ms 1 (single pulse TC = 25C, TJ 175C; VGE=15V) 0.1 1 GIPG260820141339FSR IC (A) 10 (single pulse TC = 25C, TJ 175C; VGE=15V) 100 VCE(V) Figure 12. Collector current vs. switching frequency for TO-247 and TO-3P GIPG260820141342FSR Ic [A] 0.1 1 10 100 VCE(V) Figure 13. Collector current vs. switching frequency for TO-3PF GIPG260820141347FSR Ic [A] 60 20 Tc=80C Tc=80C 50 40 15 Tc=100 C Tc=100 C 30 10 20 10 0 1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 10 5 f [kHz] DocID026826 Rev 1 0 1 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 10 f [kHz] 7/20 Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 14. Normalized VGE(th) vs. junction temperature AM16060v1 VGE(th) (norm) Figure 15. Normalized V(BR)CES vs. junction temperature AM16059v1 V(BR)CES (norm) VCE= VGE IC= 1mA IC= 1mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 0 50 100 150 Figure 16. Switching losses vs temperature GIPG260820141404FSR E (J) 350 0.9 -50 TJ(C) 0 50 100 150 TJ(C) Figure 17. Switching losses vs gate resistance GIPG260820141408FSR E (J) VCC= 400V, VGE= 15V Rg= 10, IC= 20A VCC= 400V, VGE= 15V IC= 20A, TJ= 175 C 550 EOFF 450 250 EOFF 350 EON 250 150 EON 150 50 20 40 60 50 3 80 100 120 140 160 TJ(C) 10 17 24 31 38 45 RG() Figure 18. Switching losses vs collector current Figure 19. Switching losses vs collector emitter voltage GIPG260820141358FSR E (J) VCC= 400V, VGE= 15V Rg= 10, TJ= 175C) GIPG260820141413FSR E (J) EOFF 400 TJ= 175C, VGE= 15V Rg= 10, IC= 20A EOFF 600 300 400 200 EON 200 0 0 8/20 EON 10 20 30 100 40 IC(A) DocID026826 Rev 1 0 150 250 350 450 VCE(V) STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 20. Switching times vs collector current GIPG260820141417FSR t(ns) Electrical characteristics Figure 21. Switching times vs gate resistance GIPG260820141422FSR t(ns) TJ= 175C, VGE= 15V IC= 20A, VCC= 400V tdoff tdoff 100 100 tdon tf tdon tf 10 10 tr TJ= 175C, VGE= 15V Rg= 10, VCC= 400V tr 1 0 20 10 30 Figure 22. Capacitance variations 10 20 30 40 Rg() Figure 23. Gate charge vs. gate-emitter voltage GIPG260820141434FSR C(pF) 10 0 IC(A) 40 10000 VGE (V) 16 Cies GIPG260820141445FSR VCC= 520V, IC= 20A IG= 1mA 14 12 1000 10 8 6 100 Coes Cres 10 0.1 1 10 VCE(V) DocID026826 Rev 1 4 2 0 0 40 80 120 Qg(nC) 9/20 Electrical characteristics STGFW20H65FB, STGW20H65FB, STGWT20H65FB Figure 24. Thermal impedance for TO-247 and TO-3P ZthTO2T_B K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 10/20 -4 10 -3 10 DocID026826 Rev 1 -2 10 -1 10 tp (s) STGFW20H65FB, STGW20H65FB, STGWT20H65FB Electrical characteristics Figure 25. Thermal impedance for TO-3PF ZthTOF3T_A K =0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c =tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 DocID026826 Rev 1 -1 10 0 10 tp (s) 11/20 Test circuits 3 STGFW20H65FB, STGW20H65FB, STGWT20H65FB Test circuits Figure 26. Test circuit for inductive load switching Figure 27. Gate charge test circuit AM01504v1 Figure 28. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 90% IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff AM01506v1 12/20 DocID026826 Rev 1 AM01505v1 STGFW20H65FB, STGW20H65FB, STGWT20H65FB 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW20H65FB Figure 29. TO-3PF drawing 7627132_D DocID026826 Rev 1 13/20 Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 7. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 14/20 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID026826 Rev 1 10.20 STGFW20H65FB, STGW20H65FB, STGWT20H65FB 4.2 Package mechanical data TO-247, STGW20H65FB Figure 30. TO-247 drawing 0075325_G DocID026826 Rev 1 15/20 Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 8. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/20 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID026826 Rev 1 5.70 STGFW20H65FB, STGW20H65FB, STGWT20H65FB 4.3 Package mechanical data TO-3P, STGWT20H65FB Figure 31. TO-3P drawing 8045950_B DocID026826 Rev 1 17/20 Package mechanical data STGFW20H65FB, STGW20H65FB, STGWT20H65FB Table 9. TO-3P mechanical data mm Dim. 18/20 Min. Typ. Max. A 4.60 4.80 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 13.70 13.90 14.10 E 15.40 15.60 15.80 E1 13.40 13.60 13.80 E2 9.40 9.60 9.90 e 5.15 5.45 5.75 L 19.80 20 20.20 L1 3.30 3.50 3.70 L2 18.20 18.40 18.60 oP 3.30 3.40 3.50 oP1 3.10 3.20 3.30 Q 4.80 5 5.20 Q1 3.60 3.80 4 DocID026826 Rev 1 STGFW20H65FB, STGW20H65FB, STGWT20H65FB 5 Revision history Revision history Table 10. Document revision history Date Revision 28-Aug-2014 1 Changes Initial release. DocID026826 Rev 1 19/20 STGFW20H65FB, STGW20H65FB, STGWT20H65FB IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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