This is information on a product in full production.
August 2014 DocID026826 Rev 1 1/20
20
STGFW20H65FB, STGW20H65FB,
STGWT20H65FB
Trench gate field-stop IGBT, HB series
650 V, 20 A high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•High speed switching series
•Minimized tail current
•V
CE(sat)
= 1.55 V (typ.) @ I
C
= 20 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Lead free package
Applications
•Photovoltaic inverters
•High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate and field-stop
structure. The device is part of the new HB series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of any
frequenc y co nv erter. Furthermore, a slightly
positive V
CE(sat)
temperature coefficient and very
tight parameter distribution result in safer
paralleling operation.
1
23
Table 1. Device summary
Order codes Marking Package Packaging
STGFW20H65FB GFW20H65FB TO-3PF Tube
STGW20H65FB GW20H65FB TO-247 Tube
STGWT20H65FB GWT20H65FB TO-3P Tube
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