MS I ELECTRONICS INC 35E D 56564bb 0000391 3 BGMSI 1-87-19 HYPERABRUPT - ABRUPT sens 1s MV 206 e UHF-MICROWAVE TUNING DIODES || eiszts: 8 inc EP1014-1038 . . . designed for electronic tuning and control applications e LOW INDUCTANCE in the UHF and lower microwave frequency ranges. e PLANAR CONSTRUCTION GENERAL SPECIFICATIONS (25C unless noted) Rating Symbol Value Reverse Voltage VR 30 Vdc Min @ 10UA . Max @ 28Vde Reverse Voltage Leakage Current IR 5 wage rece 28 Vde & TA = 60C Junction Temperature Ty +175C Max. Storage Temperature Tstg 65C to 200C Device Dissipation Po 5.0 Max ELECTRICAL CHARACTERISTICS (Ta = 25) Diode Cap. (CT) Tuning Ratio (TR) Fig. of Merit (Q)} @ 25V/1 MHz (pF) C3/C25 @ 1 MHz @9 pF & 100 MHz TYPE NO. Min. Max. . Min. Max. Min. MV205 2.0 2.3 4.5 6.0 225 MV206 1.8 2.8 4.0 6.0 150 ABRUPT GENERAL SPECIFICATIONS (25C unless noted) 25 VOLT TYPES 30 VOLT TYPES Reverse Breakdown Voltage Vp_ = 25 Vde @ 1, = 10uA Ve = 30 Vdc @ Ie = 20uA =0. A@V,= =O, VR = 25 Vd Reverse Leakage Current lpm 0.02 vA @ R 20 Vde Ig =0.02 uA @ VR Vdc Ip = 10uA @V,,=20 Vde & T, = 125 C IR = 10 UA @ VR = 25 Vde & Ta 125C ELECTRICAL CHARACTERISTICS (Ta = 25) Diode Cap. (ct)! Tuning Ratio (TR) Fig. of Merit Tuning Ratio (TR}| Fig. of Merit @ 4V&1 MHz CO/C25 @ 1 MHz | Q@4V & 50 MHz C2/C30 @ 1 MHz |Q @ 4V & 50 MHz MIN NOM MAX TYPE NO. MIN MIN TYPE NO. MIN MIN 1.7 2.2 2.7 LP1014 4.0:1 1000 EP1014 1.9:1 1500 2.7 3.0 3.3 LP1016 4.4-1 900 EP1016 2.2:1 1400 3.2 3.6 41 LP1017 4.2:1 900 EP1017 2.3:1 1200 4.0 4.5 5.1 LP1018 4.3:1 900 EP1018 2.4:1 1200 5.0 5.6 6.2 LP1019 4.4:1 800 EP1019 2.5:1 1000 6.1 6.8 75 LP1020 4.5:1 800 EP1020 2.5:1 1000 V4 8.2 9.0 LP1022 4.5:1 800 EP1022 2.6:1 1000 9.0 10.0 11.0 LP1024 45:1 700 EP1024 2.7:1 1000 10.9 12.0 13.2 LP1026 4.5:1 700 EP1026 2.8:1 900 13.3 15.0 16.5 LP1028 45:1 600 EP1028 2.8:1 900 16.4 18.0 19.8 LP1030 46:1 600 EP1030 2.9:1 800 18.0 20.0 22.0 LP1032 4.6:1 500 EP1032 2.9:1 800 19.8 22.0 24.2 LP1034 47:1 500 EP1034 2.9:1 800 24.3 27.0 29.7 LP1036 4.7:1 500 EP1036 2.9:1 800 29.7 33.0 36.3 LP1038 47:1 500 EP1038 3.0:1 700 1. Closer Capacitance Tolerance Available Upon Request TO ORDER - REFER TO PACKAGE DESIGNATIONS ON NEXT PAGE; SELECT CASE STYLE AND ADD TO TYPE NO. -11-M S I ELECTRONICS INC - eee ee 35E D SbS5b4bb OOOOSI2 5 MANSI 7207-9 Ee eftectronics inc (GC Series) MICROWAVE VARACTOR DIODES ABRUPT - HYPERABRUPT SERIES GC1500-GC1514 GC1600-GC1609 GC1702-GC1717 HA1702-HA1717 (GIGA-CAP HA Series) MV1858-MV1870 ELECTRICAL CHARACTERISTICS (TA= 25C unless otherwise noted) Vartaee Breakdown Vr 30 Vde @ IR = 10 vAde 45 Vide @ Iq = 10 uAde 60 Vde @ Ip = 10 uAde Reverse Voltage | C02 vA OVA Sve | O02 uA @V_* 4OVEr 0,07 vAde @ Vq + 55 Vic Leakage Current (mex) R BO uAde @V_ 25 Vac ITA 198C) ZOuUAdK OV, 40 Vac ITA = 175Ch 20 vAde @Vq + 55 Vdc IT, * 125C) | Wack @ Va_ - $5 Vdc ITA VP CF Capacitance Temperature = = = = Contticient (typ) Tec 300 ppm/C @ Vp = 4 Vdc, f= 1 MHz 200 ppm/C @ Vp = 4 Vdc, f= 1 MHz ODlode Cap, (CT)* Type cos/c30} Qs @ Type Cos/Cc30/ Q4e@ Type co/C45I Q4@ Type [CO/C60} Q4 Type C4/C60] Q4@ t 10% @ 4V/] MHz No, RATIO} 50 MHz No. RATIO |50 MHz No. RATIO}SO MHz No, RATIOI50 MHz No. RATIO }L0OOMHz| pf Min min min min min min min min Mun Tyn min 0.8 GC1800} 3.3:1 3600 Slight GC1600] 4.2:1 2000 1.0 GC1I801] 3.4:1 3600 Hy perabrupt GC1I6O0f] 4.4:1 2000 mvisse! 2.1/2.3 350 1.2 GCso2| 3.4:1 3600 | HA1702| 5.0:1 1200 | Gc1602| 4.5:1 2000 1 GC1t702] 5,0:1 1200 1.8 GCi$so03) 3.5:1 3400 | HAI703} 5.3:1 1200 | GC1603{ 4.8:1 2000 | GC1703{ 5,3:1 1200 1.8 GCs04) 3.5.1 | 3300 | HAI704/ 5,5:1 | 1200 | Gct604| 4.9:1 | 2000 | Gci704| 5.5:1 | 1200 2.2 GC1805] 3.7:1 3300 |] HAI70S! 5.6:1 1200 | GC1605/; 5.0:1 2000 1 GCt705] 5.8:1 1200 Mv tego?) 2.5/2.7 350 2.7 GC1$06) 3.7:1 3100 | HA1706/ 5.9:1 1100 | GC1606/ 5.2:1 1800 [| Gc1I706] 5.9:1 1100 3.3 GC1307 | 3.8:1 3000 | HATINT] 6,.0:1 1100 [| GC1607] 5,3:1 1800 | GC1707| 6.0:1 1100 IMV1862 | 2.6/2.8 300 a9 Gcso0s!] 3,9:) 2600 | HA1706/ 6.0:1 1050 | Gct608| 5.4:1 1600 | Gct708] 6,0:1 1050 47 GC1509/ 3.9:1 | 2500 | HA1709| 6.5:1 | 1050 | Gc1609] 5.4:1 | 1800 | Gct709] 6.5:1 1050 [MV1863 | 2.6/2.8] 300 s.6 Gcts10]| 4,0:1 2500 | HAI7IO! 6.5:1 1050 GC1I710/ 6.5:1 1050 6.8 GCiustt | 4.0:1 2200 [| HAIT1I1] 6.5:1 1000 GCt711] 6.5:3 1000 jMV1864 | 2.7/2.9 300 a2 GC1ISt2] 4.0:1 2000 | HAI712] 7.0:1 1000 GCt712/ 7,.0:1 1000 |MV1865 | 2.7/2.9 300 10.0 GCIst3| 4,2:1 2000 | HAI7Z43; 7.0:1 950 GCI713] 7.0:1 950 [MV1866 | 2.8/3.0 250 20 Gets14]} 4.2:1 | 1600 | HAt7I} 7.0:1 900 GCIWt4) 7.071 900 IMV1868 | 2.6/3.0] 200 15.0 HAI7IS| 7.0.1, 850 GC1I715] 7.0:1 850 IMV1B870 | 2.8/3.0 200 18.0 HAITI6] 7.0:1 850 GCIFIG] 7.0:1 650 22.0 HAITI7 7,0:1 850 GCt7t7} 7,0:1 650 * To order devices with closer tolerances, Q) Cre + 30% specify 5% ort 2% after type no. and suffix. (2) Cy = 220% TO ORDER ~ SELECT CASE STYLE AS DESIGNATED BY LETTER BELOW AND ADD TO TYPE NO. PACKAGE DESIGNATIONS * CHARACTERISTICS CASE A CASE B CASE D CASE E CASE H 23 wa Poe 429 Serres Inductance* Lg = 0.5 nh (typ) + : we | 123 9; ease [Tg rei, [Elis @ + rp 0 | a Ont Case Capacitance** Cc = 0:15 pf (typ) arg Tr it cs 1 ol ATHODE te ~ CATHODE pe a ok MAK . "WP wax CATHODE } m2 1 ian Lo *@ f = self resonant frequency ' ** @f = 1 MHz (except Case A, where) | | CATHODE 0 (Cc = 0.2 pf (typ) 3 | UNC 28, at : wceereememepe a peace { eke. gy Log Hose CASE T NOTE: . . Circuit Capacitance of EE o j i ve types is % that for the Fa ets Of 2 single CASE E with the ribbon teads .003"' X .080" XK se 2 ' \. individual type. CASE EE Consists of 2 CASE E varactors, back-to-back with anodes common, with 3 leads weided as shown to provide a flat, low profile for mounting on a PC board or other substrate. Each lead ts gold plated kovar, .OO3" thick * .O80" wide X 2" minsmum length. CASE F dvep Consist of a single CASE E with the ribbon leads welded and formed as shown for low profile mounting on a PC board or other substrate, Other case styles and other back-to-back configurations including common cathode are available; please consult factory. U electronics inc. Tel. 718 672-6500 Telex: 426407 Fax: 718 397-0972 -12- J nF