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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
2307
7.0 Watts - 20 Volts, Class C
Microwave 2300 MHz
GENERAL DESCRIPTION
The 2307 is a COMMON BASE transistor capable of providing 7 Watts Class
C, RF output power at 2300 MHz. Gold metalization and diffused ballasting
are used to provide high reliability and supreme ruggedness. The transistor
uses a fully hermetic High Temperature So lder Sealed package.
CASE OUTLINE
55 BT- Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 20.5 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Voltage 42 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 1.0 A
Maximum Temperature s
Storage Temperature - 65 to + 200 C
o
Operating Junction Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
ηc
VSWR1
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 2.3 GHz
Vcb = 20 Volts
Po = 7 W atts
As Above
F = 2.3 GHz, Po = 7 W
7.0
8.0 40
1.1
30:1
Watt
Watt
dB
%
BVces
BVebo
Icbo
hFE
Cob
θjc
Collector to Emitter Breakdown
Emitter to Base Breakdown
Collector to Base Cu rrent
Current Gain
Output Capacitance
Thermal Resistance
Ic = 50 mA
Ie = 5.0 mA
Vcb = 22 Volts
Vce = 5 V, Ic = 500 mA
F = 1.0 MHz, Vcb = 22 V
42
3.5
10 10
2.5
8.5
Volts
Volts
mA
pF
C/W
o
Issue August 1996
2307
Rev 1,
August 1996