PBSS5520X,135 - NXP Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2004 Jun 11 2004 Nov 08

DISCRETE SEMICONDUCTORS

PBSS4520X

20 V, 5 A

NPN low VCEsat (BISS) transistor

ok, halfpage

M3D109

2004 Nov 08 2

NXP Semiconductors Product data sheet

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

FEATURES

•High hFE and low VCEsat at high current operation

•High collector current capability: IC maximum 5 A

•Higher efficiency leading to less heat generation.

APPLICATIONS

•Medium power peripheral drivers, e.g. fans and motors

•Strobe flash units for DSC an d mobile phones

•Inverter applications, e.g. TFT displays

•Power switch for LAN and ADSL systems

•Medium power DC-to-D C co nversion

•Battery chargers.

DESCRIPTION

NPN low VCEsat BISS transistor in a SOT89 (SC-62) plastic

package.

PNP complement: PBSS5520X.

MARKING

Note

1. * = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China.

TYPE NUMBER MARKING CODE(1)

PBSS4520X *1F

PINNING

PIN DESCRIPTION

1emitter

2collector

3base

321

sym04

Fig.1 Simplified outline (SOT89 ) and symbo l .

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage 20 V

ICcollector current (DC) 5 A

ICM peak collector current 10 A

RCEsat equivalent on-resistance 44 mΩ

ORDERING INFORMATION

TYPE NUMBER PACKAGE

NAME DESCRIPTION VERSION

PBSS4520X SC-62 plastic surface mounted packag e; collector p a d for good heat

transfer; 3 leads SOT89

2004 Nov 08 3

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

LIMITING VALUES

In accordance with th e A b solute Maximum Rating S ystem (IEC 60134).

Notes

1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2.

2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and st andard footprint.

3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 1 cm2.

4. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 6 cm2.

5. Device mounted o n a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other

mounting cond itions, see “Thermal considerations for SOT8 9 in the General Part of associated Ha ndbook”.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volt a ge open emitter −20 V

VCEO collector-emitter voltage open base −20 V

VEBO emitter-base voltage open collector −5 V

ICcollector current (DC) −5 A

ICRM repetitive peak colle ctor current notes 1 and 2 −7 A

ICM peak collector current tp ≤ 1 ms −10 A

IBbase current (DC) −1 A

IBM peak base current tp ≤ 1 ms −2 A

Ptot total power dissipation Tamb ≤ 25 °C

notes 1 and 2 −2.5 W

note 2 −0.55 W

note 3 −1 W

note 4 −1.4 W

note 5 −1.6 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb ambient temperature −65 +150 °C

2004 Nov 08 4

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

Tamb (°C)

−50 20015050 1000

001aaa229

800

400

1200

1600

Ptot

(mW)

(1)

(2)

(3)

Fig.2 Power derating curves.

(1) FR4 PCB; 6 cm2 mounting pad for collector.

(2) FR4 PCB; 1 cm2 mounting pad for collector.

(3) FR4 PCB; standard footprint .

2004 Nov 08 5

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

THERMAL CHARACTE RISTICS

Notes

1. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ Š≤ 0.2.

2. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and st andard footprint.

3. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 1 cm2.

4. Device mounted on a pr inted-circuit board, single-s ided copper, tin-plated and mounting pad for collector 6 cm2.

5. Device mounted o n a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other

mounting cond itions, see “Thermal considerations for SOT8 9 in the General Part of associated Ha ndbook”.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air

notes 1 and 2 50 K/W

note 2 225 K/W

note 3 125 K/W

note 4 90 K/W

note 5 80 K/W

Rth(j-s) thermal resistance from junction to soldering point 16 K/W

006aaa232

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

Fig.3 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on FR4 printed - circuit board; standard footprint.

2004 Nov 08 6

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

006aaa233

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(5)

(6)

(7)

(8)

(9)

(10)

(1) (2)

(3) (4)

Fig.4 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounting pad for collector 1 cm2.

006aaa234

102

103

Zth

(K/W)

10−1

10−51010−2

10−4102

10−1tp (s)

10−3103

(6)

(7)

(8)

(9)

(10)

(1)

(5) (4)

(3) (2)

Fig.5 Transient thermal impeda nc e as a function of pulse time; typical values.

(1) δ = 1.

(2) δ = 0.75. (3) δ = 0.5.

(4) δ = 0.33. (5) δ = 0.2.

(6) δ = 0.1. (7) δ = 0.05.

(8) δ = 0.02. (9) δ = 0.01.

(10) δ = 0.

Mounted on F R4 printed-circuit board; mounting pad for collector 6 cm2.

2004 Nov 08 7

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = 20 V; IE = 0 A −−100 nA

VCB = 20 V; IE = 0 A; Tj = 150 °C−−50 μA

IEBO emitter-base cu t-off current VEB = 5 V; IC = 0 A −−100 nA

ICES collector-emitter cut-off current VCE = 20 V; VBE = 0 V −−100 nA

hFE DC current gain VCE = 2 V

IC = 0.5 A 300 450 −

IC = 1 A; note 1 300 440 −

IC = 2 A; note 1 250 420 −

IC = 5 A; note 1 200 380 −

VCEsat collector-emitter saturation

voltage IC = 0.5 A; IB = 5 mA −35 50 mV

IC = 1 A; IB = 10 mA −50 70 mV

IC = 2.5 A; IB = 125 mA; note 1 −85 120 mV

IC = 4 A; IB = 200 mA; note 1 −130 180 mV

IC = 5 A; IB = 500 mA; note 1 −160 220 mV

RCEsat equivalent on-resistance IC = 5 A; IB = 500 mA; note 1 −32 44 mΩ

VBEsat base-emitt er saturation voltage IC = 4 A; IB = 200 mA; note 1 −0.9 1.05 V

IC = 5 A; IB = 500 mA; note 1 −0.96 1.1 V

VBEon base-emitter turn-on voltage VCE = 2 V; IC = 2 A −0.74 0.85 V

fTtransition frequen c y IC = 100 mA; VCE = 10 V;

f = 100 MHz 100 125 −MHz

Cccollector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz −90 110 pF

2004 Nov 08 8

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

001aaa746

400

600

200

800

1000

hFE

IC (mA)

10−1104

103

110

(1)

(2)

(3)

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

VCE = 2 V.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

001aaa750

0.4

0.8

1.2

VBE

(V)

IC (mA)

10−1104

103

110

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

VCE = 2 V.

Tamb = 25 °C.

001aaa747

102

103

VCEsat

(mV)

IC (mA)

10−1104

103

110

(1)

(3)

(2)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = −55 °C.

(3) Tamb = 25 °C.

001aaa748

IC (mA)

10−1104

103

110

102

103

VCEsat

(mV)

10−1

(1)

(2)

(3)

Fig.9 Collector-emitter saturation voltage as a

function of collector current; typical values.

Tamb = 25 °C.

(1) IC/IB = 100.

(2) IC/IB = 50.

(3) IC/IB = 10.

2004 Nov 08 9

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

001aaa749

0.4

0.8

1.2

VBEsat

(V)

IC (mA)

10−1104

103

110

(1)

(2)

(3)

Fig.10 Base- emitte r s atur ation v oltag e as a

function of collector current; typical values.

IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

001aaa878

0.4

0.8

1.2

VBE

(V)

IC (mA)

10−1104

103

110

(2)

(1)

(3)

Fig.11 Base- emitte r voltage as a function of

collector current; typical values.

VCE = 2 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 100 °C.

VCE (V)

021.60.8 1.20.4

001aaa745

100

150

200

250

(mA)

(10)

(9)

(1)(2)(3)(4)(5)(6)

(8)

(7)

Fig.12 Collector current as a function of

collector-emitter voltage; typical values.

Tamb = 25 °C.

(1) IB = 5 mA.

(2) IB = 4.5 mA.

(3) IB = 4 mA.

(4) IB = 3.5 mA.

(5) IB = 3 mA.

(6) IB = 2.5 mA.

(7) IB = 2 mA.

(8) IB = 1.5 mA.

(9) IB = 1 mA.

(10) IB = 0.5 mA.

001aaa879

IC (mA)

10−1104

103

110

102

RCEsat

(Ω)

10−2

10−1

(1)

(3)

(2)

Fig.13 Equi valent on-resist ance as a function of

collector current; typical values.

IC/IB = 20.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

2004 Nov 08 10

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

Reference mounting conditions

001aaa234

2.5 mm

5 m

1.6 mm

0.5 mm

1 mm

3.96 mm

3 mm

2.5 mm

1 mm

32 mm

Fig.14 FR4, standard footprin t.

handbook, halfpage

MLE322

40 mm

32 mm

2.5 mm

10 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

10 mm

Fig.15 FR4, mounting pad for collector 1 cm2.

001aaa235

2.5 mm

5 m

1.6 mm

0.5 mm

1 mm

3.96 mm

30 mm

32 mm

Fig.16 FR4, mounting pad for collector 6 cm2.

2004 Nov 08 11

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

DIMENSIONS (mm are the original dimensions)

SOT89 TO-243 SC-62 04-08-03

06-03-16

EHE

0 2 4 mm

scale

bp3

bp2

bp1

Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT8

123

UNIT A

mm 1.6

1.4 0.48

0.35

0.44

0.23

4.6

4.4

2.6

2.4

HELp

4.25

3.75

3.0

0.13

1.5 1.2

0.8

bp2

bp1

0.53

0.40

bp3

1.8

1.4

2004 Nov 08 12

NXP Semiconductors Pr oduct dat a shee t

20 V, 5 A

NPN low VCEsat (BISS) transistor PBSS4520X

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this document may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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reserves the right to make changes to information

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specifications and product descriptions, at any time and

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warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

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not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 08 Document orde r number: 9397 750 13884