G SOLID STATE ' High-Voltage Power Transistors 2N5415, 2N5416 File Number 336 Silicon P-N-P High-Voltage TERMINAL DESIGNATIONS Planar Transistors For High-Speed Switching and Linear-Amplifier Applications in Military, Industrial and Commercial Equipment C (case) Features: 9208-27512 = 2N5415: p-n-p complement of 2N3440 2N5416: p-n-p complement of 2N3439 JEDEC TO-205AD = Maximum sate-area-of-operation curves High voltage ratings: Vcso = 350 V max (2N5476) Vero = 300 V max. (2N5476) 200 V max. (2N5415) The RCA-2N5415 and 2N5416" are silicon p-n-p transistors with high breakdown voitages, high frequency response, and fast switching speeds. These transistors differ primarily in their voltage ratings. Typical applications include high-voltage differential and operational amplifiers; high-voltage inverters; and high- voltage, low-current switching and series regulators. The 2N5415 and 2N5416 are supplied in the JEDEC TO- 205AD package. "Formerly RCA Dev. Types TA2819 and TA2B19A. *Data on types 2N3439 and 2N3440 are given in RCA data bulletin Fite No. 64. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5415 2N5416 -200 -350 _ -350 -200 -300 -4 -6 -1 i -0.5 -0.5 10 10 See Figs. 1&2 1 1 6.7 67 -65 to +200 255 in accordance with JEDEC registration data format (JS-9 RDF-8). 170 = 0710 .B-05 OL DEQ 3a7s0a1 core 9 Bo 37-0G E SOLID STATE O1 DE fj sa7soa1 0017169 0 f 27 -| High-Voltage Power Transistors 2N5415, 2N5416 ELECTRICAL CHARACTERISTICS, Case Temperature (Tc) = 25C TEST CONDITIONS LIMITS CHARACTERISTIC; VOLTAGE |CURRENT| UNITS Vde mA de 2N5415 2N5416 Ves | Vce [Vel ic | ig | MIN. | MAX. | MIN. | MAX. 250 o} - - | -50 IcEO 150 0 - 50 - - LA * icBo 280 - - - 50 Ig=0 -175 | -50 - _ | HA 300]1.5 - ~ | -50 IcEV 200]1.5 - | -50 - - BA 6 0 - ~- | -20 * leBO a|o | -20 - | HA -10 50b - - 30 | 120 *) hee 10 50b 30 | 150 = = VoeEolsus) 60 | o|-200a] - |-300a) v Veer (sus) _ _ _ Ie _ Rge = 502 50 3504 Vv VBE 10 sob | -15 | -15 Vecglsat) b0b|-5) - | -2.5 - | -2 lh fe _ _ _ _ = 1 kHz 10 5 25 25 * Ihre oes MHz -10] |-10 3 - 3 - * Re(hj,) fet MHz -10 5 300 | 300 2 *| Cib 51 0 | 75 - | 75 F f= 1MHz P * Cob 10 | 15 ~ | 15 pF f=1MHz IS/b 100 100 | -100 - mA t= 0.4 s nonrep. Resc | 17.5 - {17.5 | C/W * (In accordance with JEDEC registration data format (JS-9 RDF-8). | CAUTION: The sustaining voltages Voegisus] and VogRisus) MUST NOT be measured on a curve tracer. b Pulsed: Pulse = 300 HS; duty factor < 2%. o711 B-06 171G E SOLID STATE High-Voitage Power iransistors 2N5415, 2N5416 COLLECTOR CURRENT (Ic) mA FOR SINGLE O1 DE i 387508) o017170 OPERATION (Tg 25C (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE } NONREPETITIVE PULSE Voce (MAX.)=-200V (2N5415) VeEO (MAX }=-300V (2N5416) -10 -100 COLLECTOR -TO-EMIFTER VOLTAGE (Vce)- V 92CS-I7668RI Fig. 1 Maximum safe operating areas. 100 CASE TEMPERATURE (To] *C (28 50 (175-200 92US-1469Rt Fig. 2 Dissipation derating curve. COLLECTOR-TO-EMITTER YOLTAGE [Vce) =-10 Cate TEMPERATURE (Te) = 2#C 6 a GAMN-BANDWIOTH PRODUCT (Fy) Mie - COLLECTOR CURRENT Cig} mA -1% =1000 ey uas Fig. 4 Typical gain-bandwidth product for both types. 172 CTOR-TO-EMITTER VOLTAGE ~-Ol I COLLECTOR CURRENT{(I)mA azts-acc Fig. 3 Typical de beta characteristics for both types. OC BETA [Ic /Igl#t0 -20 40 +60 -60 -100 COLLECTOR CURRENT (IimA 120 O2C5-F7EIZ Fig. 5 Typical colfector-to-emitter saturation voltage for both types. 0712 B-0? ? J r27-7G E SOLID STATE OL def se7soa1 o017171 49 I-- 7-17 r Hign-voltage Power Trangstars 2N5415, 2N5416 VOLTAGE PULSE DURATION: 30 ps REPETITION RATE = (00 Hr COLLECTOR SUPPLY VOLTAGE CASE TEMPERATURE (Tolt25C Te/igtl0 1g, "Tap q * E a | | a 3 . = & z z E 3 3 8 z a xc a RP 0 20 40 60 60 100 no BASE-TO-EMITTER VOLTAGE WWgEIY gacs-22546 COLLECTOR CURRENT (Ic }mA e2es-i7515R1 Fig. 6 Typical input characteristics for Fig. 7 Typical turn-on time characteristic both types. for hoth types. TEMPERATURE (To) = 2C PULSE OURATION "30 ys REPETITION RATE =100 Hr COLLECTOR SUPPLY VOLTAGE (Vgc)* 100 CASE TEMPERATURE {Tc}*25C Te/lg 110 Ig,*Tg < t 2 E g & = = s 3 = g 2 G 4 a 3 o nay shat mmaie BASE CURRENT Pa Q2mA - 7 20 a0 60 60 100 oe COLLECTOR-T0-EMITTER VOLTAGE (ce) - sam COLLECTOR CURRENT (1}ma e2cs-17514 Fig. 8 Typical output characteristics for Fig. 9 Typical storage-time characteristic for both types. both types. PULSE QURATION 730 us REPETITION RATE* (O00 Hz COLLECTOR SUPPLY VOLTAGE CASE TEMPERATURE {T]#25*C Teflg +10 19,23 p. COLLECTOR TO-EmITIER VOLTAGE Weg) = -10 w 2 - 4 3 i COLLECTOR CURRENT (Ic) mA $ ~ 0 Fr rT cr a GASE-TO-EMITTER VOLTAGE (pe) assur COLLECTOR CURRENT {Lcl=- mA 9208-17513 Fig. 10 Typical transfer characteristics for Fig. 11 -- Typical fall-time characteristic for both both types. types. 173 0713 B-08