101
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1667/1668)
Application : TV Vertical Output, Audio Output Driver and General Purpose
2SC4381/4382
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
2
1.6
1.2
0.4
0.8
6824 10
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
50mA
I
B
=5mA/Step
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
3
1
2
1002 10 1000
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
I
C
=0.5A
1A
2A
210.10.01
30
50
100
400
Collector Current IC(A)
DC Current Gain hFE
(VCE=10V)
Typ
210.10.01
30
50
100
400
Collector Current IC(A)
DC Current Gain hFE
(VCE=10V)
0.5
1
6
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
10 100 3001
0.01
0.1
5
1
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
Without Heatsink
Natural Cooling
1.2SC4381
2.2SC4382
DC
1ms
5ms
20ms
12
25˚C
–30˚C
125˚C
–0.01 –0.1 –0.5 –1 –2
20
10
0
30
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
30
20
10
00 50 100 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0
2
1
0 1.00.5
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=10V)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
20
RL
(Ω)
20
IC
(A)
1
VBB2
(V)
–5
IB2
(mA)
–100
ton
(
µ
s)
1.0typ
tstg
(
µ
s)
3.0typ
tf
(
µ
s)
1.5typ
IB1
(mA)
100
VBB1
(V)
10
External Dimensions FM20(TO220F)
ø3.3±0.2
10.1±0.2
4.0±0.2
16.9±0.3
13.0min
8.4±0.2
0.8±0.2
3.9
±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8 c0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4381 2SC4382
150 200
150 200
6
2
1
25(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC4381 2SC4382
10max
150 200
10max
150min 200min
60min
1.0max
15typ
35typ
Unit
µ
A
V
µ
A
V
V
MHz
pF
Conditions
VCB=
VEB=6V
IC=25mA
VCE=10V, IC=0.7A
IC=0.7A, IB=0.07A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
(Ta=25°C) (Ta=25°C)
