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For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
1
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
General Description
Features
Functional Diagram
The HMC311LP3(E) is a GaAs InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC
SMT DC to 6 GHz ampliers. This 3x3mm
QFN packaged amplier can be used as either a
cascadable 50 Ohm gain stage or to drive the LO of
HMC mixers with up to +17 dBm output power. The
HMC311LP3(E) offers 14.5 dB of gain and an output
IP3 of +32 dBm while requiring only 56 mA from a
+5V supply. The Darlington feedback pair used results
in reduced sensitivity to normal process variations
and yields excellent gain stability over temperature
while requiring a minimal number of external bias
components.
P1dB Output Power: +15.5 dBm
Output IP3: +32 dBm
Gain: 14.5 dB
50 Ohm I/O’s
16 Lead 3x3mm SMT Package: 9mm2
Typical Applications
The HMC311LP3(E) is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV & Cable Modem
• Microwave Radio
Electrical Specications, Vs= 5V, Rbias= 22 Ohm, TA = +25° C
Parameter Min. Typ. Max. Units
Gain
DC - 1.0 GHz
1.0 - 4.0 GHz
4.0 - 6.0 GHz
13.0
12.5
12.0
14.5
14.3
14.0
dB
dB
dB
Gain Variation Over Temperature
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
0.005
0.008
0.012
0.008
0.012
0.016
dB/ °C
dB/ °C
dB/ °C
Return Loss Input / Output
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 6.0 GHz
13
11
15
dB
dB
dB
Reverse Isolation DC - 6 GHz 18 dB
Output Power for 1 dB Compression (P1dB)
DC - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
13.5
12.0
10.0
15.5
15.0
13.0
dBm
dBm
dBm
Output Third Order Intercept (IP3)
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 4.0 GHz
4.0 - 6.0 GHz
32
30
28
24
dBm
dBm
dBm
dBm
Noise Figure DC - 6 GHz 4.5 dB
Supply Current (Icq) 55 74 mA
Note: Data taken with broadband bias tee on device output.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
2
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Output Return Loss vs. Temperature
Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
-25
-20
-15
-10
-5
0
5
10
15
20
0123456789
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
5
8
11
14
17
20
012345678
+25 C
+85 C
-40 C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
012345678
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
012345678
+25 C
+85 C
-40 C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
012345678
+25 C
+85 C
-40 C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12345678
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
3
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Power Compression @ 6 GHz
P1dB vs. Temperature Psat vs. Temperature
Output IP3 vs. Temperature
Power Compression @ 1 GHz
Gain, Power, Output IP3 & Supply Current
vs. Supply Voltage @ 1 GHz
0
4
8
12
16
20
012345678
+25 C
+85 C
-40 C
P1dB (dBm)
FREQUENCY (GHz)
-10
-5
0
5
10
15
20
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
-10
-5
0
5
10
15
20
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
Pout
Gain
PAE
Pout (dBm), GAIN (dB), PAE (%)
INPUT POWER (dBm)
0
4
8
12
16
20
012345678
+25 C
+85 C
-40 C
Psat (dBm)
FREQUENCY (GHz)
0
5
10
15
20
25
30
35
40
0
20
40
60
80
4.5 4.75 5 5.25 5.5
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
Icq (mA)
Vs(V)
10
14
18
22
26
30
34
012345678
+25 C
+85 C
-40 C
IP3 (dBm)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
4
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Outline Drawing
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) +7V
RF Input Power (RFIN)(Vs = +5V) +10 d Bm
Junction Temperature 150 °C
Continuous Pdiss (T = 85 °C)
(derate 5.21 mW/°C above 85 °C) 0.339 W
Thermal Resistance
(junction to ground paddle) 192 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
ESD Sensitivity (HBM) Class 1A
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PAT TERN.
Part Number Package Body Material Lead Finish MSL Rating Package Marking [3]
HM C311LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] 311
XXXX
HMC311LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 311
XXXX
[1] Max peak reow temperature of 235 °C
[2] Max peak reow temperature of 260 °C
[3] 4-Digit lot number XXXX
Package Information
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
5
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Application Circuit
Pin Descriptions
Pin Number Function Description Interface Schematic
1, 2, 4 - 9,
11 - 16 N/C This pin may be connected to RF ground.
3RFIN This pin is DC coupled.
An off chip DC blocking capacitor is required.
10 RFOUT RF output and DC Bias for the output stage.
GND Package bottom must be connected to RF/DC ground.
Recommended Component Values
Component Frequency (MHz)
50 900 1900 2200 2400 3500 5200 5800
L1 270 nH 56 nH 18 nH 18 nH 15 nH 8.2 nH 3.3 nH 3.3 nH
C1, C2 0.01 µF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF
Note:
1. Select Rbias to achieve Icq using equation below,
Rbias > 22 Ohm.
2. External blocking capacitors are required on
RFIN and RFOUT.
Icq = Vs - 3.8
Rbias
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
6
HMC311LP3 / 311LP3E
v05.1213
InGaP HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 6 GHz
Evaluation PCB
The circuit board used in the nal application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
List of Materials for Evaluation PCB 106789 [1]
Item Description
J1 - J2 PC Mount SMA Connector
J3 2 mm DC Header
C1, C2 Capacitor, 0402 Pkg.
C3 10,000 pF Capacitor, 0805 Pkg.
R1 22 Ohm Resistor, 0805 Pkg.
L1 Inductor, 0805 Pkg.
U1 HMC311LP3 / HMC311LP3E
PCB [2] 106493 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
Pin Number Description
1, 2, 3 Vs
4, 5, 6 GND
J3
