MSC81090 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 4L STUD DESCRIPTION: The ASI MSC81090 is Designed for General Purpose Class A Power Amplifier Applications from 0.4 - 1.2 GHz. FEATURES: * PG = 10 dB min. at 2.0 W/ 1.0 GHz * Hermetically sealed Package * OmnigoldTM Metalization System * Emitter Ballasted MAXIMUM RATINGS IC 200 A VCC 35 V PDISS 6.25 W @ TC 75 C TJ -65 C to +200 C TSTG -65 C to +200 C JC 20 C/W CHARACTERISTICS COMMON EMITTER TC = 25 C NONETEST CONDITIONS SYMBOL BVCBO IC = 1.0 mA BVCER IC = 5.0 mA BVEBO IE = 1.0 mA ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 18 V POUT C GP VCE = 18 V RBE = 10 IC = 100 mA MINIMUM TYPICAL MAXIMUM 45 V 45 V 3.5 V 15 f = 1.0 MHz PIN = 0.2 W f = 1.0 GHz UNITS 2.0 50 10 2.2 55 10.4 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 3.2 pF W % dB REV. A 1/1