A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 45 V
BVCER IC = 5.0 mA RBE = 10 Ω 45 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 28 V 0.5 mA
hFE VCE = 5.0 V IC = 100 mA 15 120 ---
Cob VCB = 18 V f = 1.0 MHz 3.2 pF
POUT
ηC
GP
VCE = 18 V PIN = 0.2 W f = 1.0 GHz 2.0
50
10
2.2
55
10.4
W
%
dB
NPN SILICON RF POWER TRANSISTOR
MSC81090
DESCRIPTION:
The ASI MSC81090 is Designed for
General Purpose Class A Power
Amplifier Applications from 0.4 - 1.2
GHz.
FEATURES:
• PG = 10 dB min. at 2.0 W/ 1.0 GHz
• Hermetically sealed Package
• Omnigold™ Metalization System
• Emitter Ballasted
MAXIMUM RATINGS
IC 200 A
VCC 35 V
PDISS 6.25 W @ TC ≤ 75 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θJC 20 °C/W
PACKAGE STYLE .230 4L STUD
COMMON EMITTER
