© Semiconductor Components Industries, LLC, 2013
January, 2017 − Rev. 15
1Publication Order Number:
2N4921/D
2N4921G, 2N4922G,
2N4923G
Medium-Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
•Low Saturation Voltage
•Excellent Power Dissipation
•Excellent Safe Operating Area
•Complement to PNP 2N4920G
•These Devices are Pb−Free and are RoHS Compliant**
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCEO 40
60
80
Vdc
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCB 40
60
80
Vdc
Emitter Base Voltage VEB 5.0 Vdc
Collector Current − Continuous (Note 1) IC1.0 Adc
Collector Current − Peak (Note 1) ICM 3.0 Adc
Base Current − Continuous IB1.0 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD30
0.24
W
mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to + 150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
THERMAL CHARACTERISTICS (Note 2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 4.16 _C/W
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
www.onsemi.com
MARKING DIAGRAM
Y = Year
WW = Work Week
2N492x = Device Code
x = 1, 2, or 3
G=Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
2N4921G TO−225
(Pb−Free)
500 Units / Box
2N4922G TO−225
(Pb−Free)
500 Units / Box
2N4923G TO−225
(Pb−Free)
500 Units / Box
3
BASE
1
EMITTER
COLLECTOR
2, 4
TO−225
CASE 77−09
STYLE 1
123
YWW
2
N492xG
2N4921G, 2N4922G, 2N4923G
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2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
2N4921G
2N4922G
2N4923G
VCEO(sus)
40
60
80
−
−
−
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N4921G
(VCE = 30 Vdc, IB = 0)
2N4922G
(VCE = 40 Vdc, IB = 0)
2N4923G
ICEO
−
−
−
0.5
0.5
0.5
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 125_C
ICEX
−
−
0.1
0.5
mAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
−0.1
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
−1.0
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
hFE 40
30
10
−
150
−
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
−0.6
Vdc
Base−Emitter Saturation Voltage (Note 3)
(IC = 1.0 Adc, IB = 0.1 Adc)
VBE(sat)
−1.3
Vdc
Base−Emitter On Voltage (Note 3)
(IC = 1.0 Adc, VCE = 1.0 Vdc)
VBE(on)
−1.3
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
fT3.0 −
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 100 kHz)
Cob
−100
pF
Small−Signal Current Gain
(IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 25 −
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: PW ≈ 300 ms, Duty Cycle ≈ 2.0%.
2N4921G, 2N4922G, 2N4923G
www.onsemi.com
3
40
30
20
10
025 50 75 100 125 150
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
Figure 2. Switching Time Equivalent Circuit
5.0
10
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (mA)
VCC = 30 V
IC/IB = 20
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.05 20 30 50 70 100 200 700 1000
VCC
SCOPE
RB
Cjd<<Ceb
-4.0 V
t1 ≤ 15 ns
100 < t2 ≤ 500 ms
t3 ≤15 ns
DUTY CYCLE ≈ 2.0%
Vin
RC
0.07
3.0 IC/IB = 10, UNLESS NOTED
VCC = 30 V
VCC = 60 V
VBE(off) = 2.0 V
VCC = 30 V
VBE(off) = 0
300 500
tr
td
t1
VBE(off)
APPROX 9.0 V
TURN-ON PULSE
t3
t2
Vin
APPROX
+11 V
Vin
TURN-OFF PULSE
APPROX
+11 V
RB and RC varied to
obtain desired
current levels
TJ = 25°C
TJ = 150°C
VCC = 60 V
2N4921G, 2N4922G, 2N4923G
www.onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500
qJC(t) = r(t) qJC
qJC = 4.16°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.01
0.1
SINGLE PULSE
10
1.0
Figure 5. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.1 2.0 3.0 5.0 10 20 30 50 10
0
70
0.2
IC, COLLECTOR CURRENT (AMP)
TJ = 150°Cdc
5.0 ms
7.0
PULSE CURVES APPLY BELOW
RATED VCEO
SECOND BREAKDOWN
LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
7.0
3.0
0.7
0.3
1.0 ms 100 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
operation i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) ≤ 150_C. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
tμ
s, STORAGE TIME (s)
′
5.0
10
Figure 6. Storage Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05 20 30 50 70 500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 10 IC/IB = 20
5.0
10
Figure 7. Fall Time
IC, COLLECTOR CURRENT (mA)
2.0
1.0
0.5
0.3
0.2
0.1
0.05 20 30 50 70 500 700 1000
0.07
100
3.0
0.7
200 300
TJ = 25°C
TJ = 150°C
IC/IB = 20
IC/IB = 10
IC/IB = 20
tμ
f, FALL TIME (s)
IB1 = IB2
ts′ = ts - 1/8 tf
VCC = 30 V
IB1 = IB2
2N4921G, 2N4922G, 2N4923G
www.onsemi.com
5
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
1000
2.0
Figure 8. Current Gain
IC, COLLECTOR CURRENT (mA)
10 3.0 5.0 10 20 30 200 300 500 2000
500
200
100
70
Figure 9. Collector Saturation Region
1.0
0.2
IB, BASE CURRENT (mA)
00.3 0.5 1.0 2.0 5.0 10 20 50 200
0.8
0.6
0.4
0.2
IC = 0.1 A
TJ = 25°C
0.25 A 0.5 A 1.0 A
700
300
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 1.0 V
50
30
20
50 100 1000 3.0 30 100
108
0
Figure 10. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
30 60 90 120 150
107
105
104
103
VCE = 30 VIC = 10 x ICES
IC = 2 x ICES
IC ≈ICES
ICES VALUES
OBTAINED FROM
FIGURE 12
106
1.5
2.0
IC, COLLECTOR CURRENT (mA)
5.0 10 20 30 50 100 200 300 2000
1.2
0.9
0.6
0.3
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VOLTAGE (VOLTS)
Figure 11. “On” Voltage
3.0 500 1000
VBE @ VCE = 2.0 V
104
-0.2
Figure 12. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
103
102
10-1
, COLLECTOR CURRENT (A)μIC
-0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
+2.5
2.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
3.0 5.0 10 20 30 50 100 200 2000
-55°C to +100°C
TEMPERATURE COEFFICIENTS (mV/ C)°
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
qVB FOR VBE
TJ = 100°C to 150°C
*APPLIES FOR IC/IB ≤
hFE@VCE +1.0V
2
+1.0
300 500 1000
101
100
10-2
*qVC FOR VCE(sat)
2N4921G, 2N4922G, 2N4923G
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6
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
DIM MIN MAX
MILLIMETERS
D10.60 11.10
E7.40 7.80
A2.40 3.00
b0.60 0.90
P2.90 3.30
L1 1.27 2.54
c0.39 0.63
L14.50 16.63
b2 0.51 0.88
Q3.80 4.20
A1 1.00 1.50
e2.04 2.54
E
123
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
2X
2X
Q
D
L1
P
b2
b
e
c
L
A1
A
FRONT VIEW SIDE VIEW
PIN 4
BACKSIDE TAB
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
FRONT VIEW BACK VIEW
123321
4
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