CER3402 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 5 30V, 6.2A, RDS(ON) = 40m @VGS = 10V. RDS(ON) = 57m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D D D 8 7 6 5 1 S 2 S 3 S 4 G Surface mount Package. DIP-8 1 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Symbol Limit Drain-Source Voltage VDS 30 Units V Gate-Source Voltage VGS 20 V ID 6.2 A IDM 25 A PD 2.5 W TJ,Tstg -55 to 150 C Symbol Limit Units RJA 50 C/W Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b This is preliminary information on a new product in development now . Details are subject to change without notice . 1 2005.April http://www.cetsemi.com CER3402 Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 30 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 24V, VGS = 0V 1 A IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA Off Characteristics V On Characteristics c Gate Threshold Voltage VGS(th) Static Drain-Source RDS(on) On-Resistance Forwand Transconductance Dynamic Characteristics gFS VGS = VDS, ID = 250A 3 V VGS = 10V, ID = 6.2A 1 31 40 m VGS = 4.5V, ID = 5.6A 44 57 m VDS = 10V, ID = 6.2A 7 S 400 pF 180 pF 55 pF d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0V, f = 1.0 MHz Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 10V, ID = 1A, VGS = 10V, RGEN = 6 23 45 ns 14 35 ns 45 90 ns Turn-On Fall Time tf 10 30 ns Total Gate Charge Qg 12 17 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15V, ID = 6.2A, VGS = 10V 2 nC 3 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 2.5A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 2.5 A 1.3 V CER3402 30 18 25 C 24 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,5V 18 VGS=4V 12 6 15 12 6 3 VGS=3V 0 0 1 2 3 4 1 5 Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 4 Figure 1. Output Characteristics Ciss 400 300 Coss 200 100 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=6.2A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 3 VGS, Gate-to-Source Voltage (V) 500 ID=250A 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VDS, Drain-to-Source Voltage (V) 600 1.2 -55 C TJ=125 C 0 1.3 5 9 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 V =15V DS ID=6.2A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CER3402 6 4 2 0 0 3 6 9 10 RDS(ON)Limit 1 1ms 10ms 10 100ms 0 1s 10 10 12 2 -1 DC TA=25 C TJ=150 C Single Pulse -2 10 -2 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 PDM 0.02 10 t1 0.01 -2 t2 1. RJA (t)=r (t) * RJA 2. RJA=See Datasheet 3. TJM-TA = P* RJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 3 10 1 10 2 2