N-Channel Enhancement Mode Field Effect Transistor CER3402
FEATURES
30V, 6.2A, RDS(ON) = 40mΩ @VGS = 10V.
RDS(ON) = 57mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation
VDS
VGS
ID
PD
IDM
30
2.5
25
6.2
±20 V
W
A
A
V
1
DIP-8 1
D D D D
S S S G
1 2 3 4
8 7 6 5
Lead free product is acquired.
2005.April
http://www.cetsemi.com
5
PRELIMINARY
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Operating and Store Temperature Range TJ,Tstg -55 to 150 C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient b
Parameter Symbol Limit Units
C/W50RθJA
CER3402
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forwand Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
4031
1 3
-100
100
1
mΩ
V
nA
nA
µA
V
S
2
Gate Body Leakage Current, Reverse
On Characteristics c
Dynamic Characteristics d
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics d
Turn-On Delay Time
Turn-On Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ Max
30
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.2A
VGS = 4.5V, ID = 5.6A
VDS = 10V, ID = 6.2A
VDD = 10V, ID = 1A,
VGS = 10V, RGEN = 6Ω
VDS = 15V, ID = 6.2A,
VGS = 10V
VDS = 15V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 2.5A
400
180
55
23
14
45
10
45
35
90
30
12
2
3
17
2.5
1.3
75744 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
CER3402
3
C, Capacitance (pF)
ID, Drain Current (A)
Ciss
Coss
Crss
600
500
400
300
200
100
00 5 10 15 20 25
ID, Drain Current (A)
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
2.2
1.9
1.6
1.3
1.0
0.7
0.4
VGS=10V
ID=6.2A
-100 -50 0 50 100 150 200
VTH, Normalized
Gate-Source Threshold Voltage
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
-50 -25 0 25 50 75 100 125 150
IS, Source-drain current (A)
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
100
101
0.4 0.6 0.8 1.0
10-1
1.41.2
VGS=0V
-55 C
18
12
9
6
3
01 3 542
TJ=125 C
30
24
18
12
6
00 1 24
VGS=3V
VGS=4V
3
VGS=10,8,6,5V 15
25 C
5
CER3402
3
VGS, Gate to Source Voltage (V)
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
ID, Drain Current (A)
Figure 9. Switching Test Circuit Figure 10. Switching Waveforms
t
V
V
tt
d(on)
OUT
IN
on
r
10%
td(off)
90%
10% 10%
50% 50%
90%
toff
tf
90%
PULSE WIDTH
INVERTED
VDD
R
D
V
VR
S
V
G
GS
IN
GEN
OUT
L
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
10-4
PDM
t1t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10-1
10-2
10-3
101102
100
10-1
10-2
10-3
100
Single Pulse
0.02
0.05
0.1
0.2
D=0.5
0.01
10
8
6
4
2
00 3 6 9 12
VDS=15V
ID=6.2A
102
101
100
10-1
10-2
102
101
100
10-2 10-1
Single Pulse
TA=25 C
TJ=150 C
RDS(ON)Limit
1s
100ms
10ms
DC
1ms