1
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
1
2
3
4
5
6
7
8
4
32
1
56
78
SuperSO8
8 D
7 D
6 D
5 D
S 1
S 2
S 3
G 4
MOSFET
OptiMOSTM5Power-Transistor,80V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 80 V
RDS(on),max 3.7 mΩ
ID131 A
Qoss 56 nC
QG(0V..10V) 46 nC
Type/OrderingCode Package Marking RelatedLinks
BSC037N08NS5 PG-TDSON-8 037N08NS -
2
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID
-
-
-
-
-
-
131
83
22
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
Pulsed drain current3) ID,pulse - - 524 A TC=25°C
Avalanche energy, single pulse4) EAS - - 140 mJ ID=50A,RGS=25Ω
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot -
-
-
-
114
2.5 WTC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case,
bottom RthJC - 0.7 1.1 K/W -
Thermal resistance, junction - case,
top RthJC - - 20 K/W -
Device on PCB,
6 cm2 cooling area2) RthJA - - 50 K/W -
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
4
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=72µA
Zero gate voltage drain current IDSS -
-
0.1
10
1
100 µA VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
3.2
4.4
3.7
5.3 mΩVGS=10V,ID=50A
VGS=6V,ID=25A
Gate resistance1) RG- 1.3 2.0 Ω-
Transconductance gfs 47 94 - S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance1) Ciss - 3200 4200 pF VGS=0V,VDS=40V,f=1MHz
Output capacitance1) Coss - 530 690 pF VGS=0V,VDS=40V,f=1MHz
Reverse transfer capacitance1) Crss - 25 44 pF VGS=0V,VDS=40V,f=1MHz
Turn-on delay time td(on) - 14 - ns VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
Rise time tr- 10 - ns VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
Turn-off delay time td(off) - 26 - ns VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
Fall time tf- 7 - ns VDD=40V,VGS=10V,ID=50A,
RG,ext=3Ω
Table6Gatechargecharacteristics2)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 15 - nC VDD=40V,ID=50A,VGS=0to10V
Gate charge at threshold Qg(th) - 9.0 - nC VDD=40V,ID=50A,VGS=0to10V
Gate to drain charge1) Qgd - 10 15 nC VDD=40V,ID=50A,VGS=0to10V
Switching charge Qsw - 16 - nC VDD=40V,ID=50A,VGS=0to10V
Gate charge total1) Qg- 46 58 nC VDD=40V,ID=50A,VGS=0to10V
Gate plateau voltage Vplateau - 4.8 - V VDD=40V,ID=50A,VGS=0to10V
Gate charge total, sync. FET Qg(sync) - 40 - nC VDS=0.1V,VGS=0to10V
Output charge1) Qoss - 56 74 nC VDD=40V,VGS=0V
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
5
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS- - 103 A TC=25°C
Diode pulse current IS,pulse - - 524 A TC=25°C
Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C
Reverse recovery time1) trr - 41 83 ns VR=40V,IF=50A,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 36 72 nC VR=40V,IF=50A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
6
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A]
0 20 40 60 80 100 120 140 160
0
20
40
60
80
100
120
140
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-1
100
101
102
103
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-6 10-5 10-4 10-3 10-2 10-1
10-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
7
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
40
80
120
160
200
240
280
320
360
400
10 V 7 V
6 V
5.5 V
5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 50 100 150 200 250 300 350 400
0
1
2
3
4
5
6
7
8
5 V 5.5 V 6 V
7 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
02468
0
40
80
120
160
200
240
280
320
360
400
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0 40 80 120 160 200 240
0
25
50
75
100
125
150
175
200
gfs=f(ID),VDS=3V,Tj=25°C
8
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140 180
0
1
2
3
4
5
6
7
max
typ
RDS(on)=f(Tj);ID=50A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140 180
0
1
2
3
4
5
720 µA
72 µA
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 20 40 60 80
101
102
103
104
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
100
101
102
103
25 °C
25 °C, max
150 °C
150 °C, max
IF=f(VSD);parameter:Tj
9
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103
100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0 10 20 30 40 50
0
1
2
3
4
5
6
7
8
9
10
16 V
40 V
64 V
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
76
78
80
82
84
86
VBR(DSS)=f(Tj);ID=1mA
Diagram Gate charge waveforms
10
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
5PackageOutlines
1
10:1
Z8B00003332
REVISION
ISSUE DATE
EUROPEAN PROJECTION
07
06.06.2019
03mm
DOCUMENT NO.
1.27
MILLIMETERS
DIMENSION
0.90 1.20
D1
A
b
D
D2
E
E1
E2
e
L
0.34 0.54
0.03 0.23
3.88 4.31
0.45 0.71
MIN. MAX. SCALE
2
M0.45 0.69
0.15 0.35
A1
3.90 4.40
4.80 5.35
5.70 6.10
5.90 6.42
Figure1OutlinePG-TDSON-8,dimensionsinmm
11
OptiMOSTM5Power-Transistor,80V
BSC037N08NS5
Rev.2.3,2020-07-27Final Data Sheet
copper solder mask stencil apertures all dimensions in mm
1.5
1.5
0.5
0.825
0.4
0.75
2.863
0.875
2.9
0.2
0.2
1.905
1.905
1.27
3x
1.27
3x
1.6
0.6
0.925
0.5
1.27
3x
2.863
0.8
4.455
3.325
1.905
1.27
3x
1.905
PG-TDSON-8: RecommenGHd BoDrdpads & Apertures
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
12
OptiMOSTM 5 Power-Transistor , 80 V
BSC037N08NS5
Rev. 2.3, 2020-07-27Final Data Sheet
Dimension in mm
Figure 3 Outline Tape (TDSON-8)
13
OptiMOSTM 5 Power-Transistor , 80 V
BSC037N08NS5
Rev. 2.3, 2020-07-27Final Data Sheet
Revision History
BSC037N08NS5
Revision: 2020-07-27, Rev. 2.3
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-12-17 Release of final version
2.1 2019-03-05 Update Rds(on) typ at Vgs=10V
2.2 2020-02-07 Update package drawings
2.3 2020-07-27 Update current rating
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously
improve the quality of this document. Please send your proposal (including a reference to this document) to:
erratum@infineon.com
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the
product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for the intended application and the completeness of the product
information given in this document with respect to such application.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a
failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.