
This is information on a product in full production.
February 2014 DocID025865 Rev 1 1/25
STD80N10F7, STF80N10F7,
STH80N10F7-2, STP80N10F7
N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™
Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Extremely low gate charge
•Ultra low on-resistance
•Low gate input resistance
Applications
•Switching applications
Description
These devices utilize the 7
th
generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
DS(on)
in all
packages.
123
TAB
$0Y
'7$%
*
6
'7$%
*
6
+3$.
'3$.72DQG
72)3QR7$%
Order code s V
DS
@
T
Jmax
R
DS(on)
max I
D
P
TOT
STD80N10F7
100 V
0.01 Ω70 A 85 W
STF80N10F7 0.01 Ω40 A 30 W
STH80N10F7-2 0.0095 Ω80 A 110 W
STP80N10F7 0.01 Ω
Table 1. Device summary
Order codes Marking Package Packaging
STD80N10F7
80N10F7
DPAK Tape and reel
STF80N10F7 TO-220FP Tube
STH80N10F7-2 H
2
PAK-2 Tape and reel
STP80N10F7 TO-220 Tube
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