SIGC121T120R2CL - Infineon Technologies AG

SIGC121T120R2CL

Edited by INFINEON Technologies AI PS DD HV3, L 7171-P, Edition 2, 03.09.2003

IGBT Chip in NPT-technology

This chip is used for:

• power module

BSM75GD120DLC

FEATURES:

• 1200V NPT technology

• 180µm chip

• low turn-off losses

• positive temperature coefficient

• easy paralleling

• integrated gate resistor

Applications:

• drives

Chip Type VCE ICn Die Size Package Ordering Code

SIGC121T120R2CL

1200V

75A 11.08 X 11.08 mm2

sawn on foil Q67041-

A4686-A003

MECHANICAL PARAMETER:

Raster size 11.08 X 11.08

Emitter pad size 8 x ( 2.99 x 1.97 )

Gate pad size 1.46 x 0.8

Area total / active 122.8 / 99.6

mm2

Thickness 180 µm

Wafer size 150 mm

Flat position 90 grd

Max.possible chips per wafer 104 pcs

Passivation frontside Photoimide

Emitter metallization 3200 nm Al Si 1%

Collector metallization 1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Die bond electrically conductive glue or solder

Wire bond Al, <500µm

Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm

Recommended Storage Environment store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

SIGC121T120R2CL

Edited by INFINEON Technologies AI PS DD HV3, L 7171-P, Edition 2, 03.09.2003

MAXIMUM RATINGS:

Parameter Symbol Value Unit

Collector-emitter voltage, Tj=25 °C VCE 1200 V

DC collector current, limited by Tjmax IC 1 ) A

Pulsed collector current, tp limited by Tjmax Icpuls 225 A

Gate emitter voltage VGE ±20 V

Operating junction and storage temperature Tj, Tstg -55 ... +150 °C

1 ) depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified:

Value

Parameter Symbol Conditions min. typ. max. Unit

Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC=4mA 1200

Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=75A 1.8 2.2 2.6

Gate-emitter threshold voltage VGE(th) IC=3mA , VGE=VCE 4.5 5.5 6.5

Zero gate voltage collector current ICES VCE=1200V , VGE=0V 9.2 µA

Gate-emitter leakage current IGES VCE=0V , VGE=20V 480 nA

Integrated gate resistor RGint 5 Ω

ELECTRICAL CHARACTERISTICS (tested at component):

Value

Parameter Symbol Conditions min. typ. max. Unit

Input capacitance Ciss - 5.1 -

Output capacitance Coss - - -

Reverse transfer capacitance Crss

VCE=25V,

VGE=0V,

f=1MHz - 0.33 -

SWITCHING CHARACTERISTICS (tested at component), Inductive Load

Value

Parameter Symbol Conditions 1) min. typ. max. Unit

Turn-on delay time td(on) - 60 -

Rise time tr - 50 -

Turn-off delay time td(off) - 350 -

Fall time tf

Tj=125°C

VCC=600V,

IC=75A,

VGE=±15V,

RG=10Ω - 70 -

1) values also influenced by parasitic L- and C- in measurement and package.

SIGC121T120R2CL

Edited by INFINEON Technologies AI PS DD HV3, L 7171-P, Edition 2, 03.09.2003

CHIP DRAWING:

SIGC121T120R2CL

Edited by INFINEON Technologies AI PS DD HV3, L 7171-P, Edition 2, 03.09.2003

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet BSM75GD120DLC Package Econopack 3

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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