SST441
Vishay Siliconix
Document Number: 70250
S-04031–Rev. E, 04-Jun-01 www.vishay.com
8-1
Monolithic N-Channel JFET Dual
PRODUCT SUMMARY
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) |VGS1 – VGS2|Max (mV)
–1 to –6 –25 4.5 –1 20
FEATURES BENEFITS APPLICATIONS
DMonolithic Design
DHigh Slew Rate
DLow Offset/Drift Voltage
DLow Gate Leakage: 1 pA
DLow Noise
DHigh CMRR: 90 dB
DTight Differential Match vs. Current
DImproved Op Amp Speed, Settling Time
Accuracy
DHigh-Speed Performance
DMinimum Input Error/Trimming Requirement
DInsignificant Signal Loss/Error Voltage
DHigh System Sensitivity
DMinimum Error with Large Input Signal
DWideband Differential Amps
DHigh-Speed,
Temp-Compensated,
Single-Ended Input Amps
DHigh Speed Comparators
DImpedance Converters
DESCRIPTION
The SST441 is a monolithic high-speed dual JFET mounted in
a single SO-8 package. This JFET is an excellent choice for
use as wideband dif ferential amplifiers in demanding test and
measurement applications.
The SO-8 package is available with tape-and-reel options to
support automated assembly (see Packaging Information).
For similar products in TO-71 packaging, see the U441 data
sheet.
S1NC
D1G2
G1D2
NC S2
Narrow Body SOIC
5
6
7
8
Top View
2
3
4
1
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage –25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation : Per Sidea300 mW. . . . . . . . . . . . . . . . . . . . . . . .
Totala500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.4 mW/_C above 25_C
For applications information see AN102.
SST441
Vishay Siliconix
www.vishay.com
8-2 Document Number: 70250
S-04031–Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –25 –35
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –1–3.5 –6V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 6 15 30 mA
VGS = –15 V, VDS = 0 V –1–500 pA
Gate Reverse Current IGSS TA = 125_C–0.2 nA
VDG = 10 V, ID = 5 mA –1–500 pA
Gate Operating Current IGTA = 125_C–0.2 nA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs V
DS
= 10 V, I
D
= 5 mA 4.5 6 9 mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 5 mA
f = 1 kHz 20 200 mS
Common-Source
Forward T ransconductance gfs V
DS
= 10 V, I
D
= 5 mA 5.5 mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 5 mA
f = 100 MHz 30 mS
Common-Source
Input Capacitance Ciss V
DS
= 10 V, I
D
= 5 mA 3.5
Common-Source
Reverse Transfer Capacitance Crss
VDS = 10 V, ID = 5 mA
f = 1 MHz 1pF
Equivalent Input Noise Voltage enVDS = 10 V, ID = 5 mA
f = 10 kHz 4nV⁄
√Hz
Matching
Differential Gate-Source Voltage |VGS1 –VGS2|VDG = 10 V, ID = 5 mA 7 20 mV
Gate-Source Voltage Differential
Change with Temperature D|VGS1 –VGS2|
DTVDG = 10 V, ID = 5 mA
TA = –55 to 125_C10 mV/_C
Saturation Drain Current RatiocIDSS1
IDSS2 VDS = 10 V, VGS = 0 V 0.98
T ransconductance Ratiocgfs1
gfs2 VDS = 10 V, ID = 5 mA
f = 1 kHz 0.98
Common Mode Rejection Ratio CMRR VDG = 10 to 15 V, ID = 5 mA 90 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NNZ
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
SST441
Vishay Siliconix
Document Number: 70250
S-04031–Rev. E, 04-Jun-01 www.vishay.com
8-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
–0.1 pA
–1 pA
–10 pA
–100 pA
–1 nA
–10 nA
–100 nA
0151052025
0–5–4–2–1
15
13
11
7
5
25
20
15
10
5
0
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage Gate Leakage Current
VGS(off) – Gate-Source Cutoff Voltage (V) VDG – Drain-Gate Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDG = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
9
–3
Output Characteristics
VDS – Drain-Source Voltage (V)
VGS = 0 V
–0.4 V
–0.8 V
–1.2 V
–1.6 V
–2.0 V
–2.4 V
–2.8 V
20
012168420
15
10
5
0
VGS(off) = –4 V
Output Characteristics
VDS – Drain-Source Voltage (V)
5
010.80.60.40.2
4
3
2
0
1
VGS(off) = –3 V
VGS = 0 V
Output Characteristics
VDS – Drain-Source Voltage (V)
10
010.80.60.40.2
8
6
4
0
2
VGS(off) = –4 V VGS = 0 V –0.4 V
–0.8 V
–1.2 V
–1.6 V
–2.0 V
–2.4 V
–2.8 V
Output Characteristics
VDS – Drain-Source Voltage (V)
20
020161284
16
12
8
0
4
VGS(off) = –3 V
VGS = 0 V
–0.4 V
–0.8 V
–1.2 V
–1.6 V
–2.0 V
25
–1.4 V
–1.6 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
IGSS @
125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
5 mA
1 mA
100 mA
IG @ ID = 5 mA
1 mA
100 mA
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
IG – Gate Leakage
ID – Drain Current (mA)
ID – Drain Current (mA)ID – Drain Current (mA)
ID – Drain Current (mA)
SST441
Vishay Siliconix
www.vishay.com
8-4 Document Number: 70250
S-04031–Rev. E, 04-Jun-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current Common Mode Rejection Ratio
vs. Drain Current
(mV)
VGS1 VGS2
–
CMRR (dB)
VGS – Gate-Source Voltage (V) ID – Drain Current (mA)
ID – Drain Current (mA) ID – Drain Current (mA)
ID – Drain Current (mA)
TA = –55_C
125_C
VGS(off) = –3 V
VDG = 10 V
DTA = 25 to 125_C
DTA = –55 to 25_C
VDG = 10 V
TA = 25_C
DVDG = 10 – 20 V
5 – 10 V
DVGS1 VGS2
-
DVDG
CMRR = 20 log
VGS(off) = –3 V
–4 V
Circuit Voltage Gain vs. Drain Current
20
0–1.5–1.0–0.5 –2.0 –2.5
16
12
8
4
00.1 1 10
100
10
1
0.1 1 10
100
10
10.1 1 10
150
130
110
90
70
50
1100.1
100
80
60
40
20
0
On-Resistance vs. Drain Current
ID – Drain Current (mA)
0.1 1.0 10
200
160
120
80
40
0
VGS(off) = –3 V
–4 V
AV+
gfs RL
1)RLgos
Assume VDD = 15 V, VDS = 5 V
RL+10 V
ID
VDS = 10 V
25_C
V/ _C
()
t
D
Dm
VGS1 VGS2
–
rDS(on) – Drain-Source On-Resistance ( Ω )
ID – Drain Current (mA)
AV – Voltage Gain
SST441
Vishay Siliconix
Document Number: 70250
S-04031–Rev. E, 04-Jun-01 www.vishay.com
8-5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10 100 1 k 100 k10 k
VGS – Gate-Source Voltage (V)
Common-Source Input Capacitance
vs. Gate-Source Voltage
– Input Capacitance (pF)Ciss
VDS = 0 V
15 V
f = 1 MHz
10
0–16 –20–8–4
8
6
4
2
0
5 V
–12
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
– Reverse Feedback Capacitance (pF)Crss
VGS – Gate-Source Voltage (V)
VDS = 0 V
15 V
f = 1 MHz
5
0–20–16–8–4
4
3
1
0
2
–12
Output Conductance vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
50
40
30
20
10
00.1 1 10
25_C
Equivalent Input Noise Voltage vs. Frequency
f – Frequency (Hz)
VDS = 10 V
ID @ 10 mA
20
16
12
8
4
0
VGS = 0 V
Common-Source Forward Transconductance
vs. Drain Current
ID – Drain Current (mA)
TA = –55_C
125_C
0.1 1 10
10
8
2
0
6
4
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
VGS(off) – Gate-Source Cutoff Voltage (V)
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDG = 10 V, VGS = 0 V, f = kHz
rDS gos
250
0–3–5–4–2–1
200
150
100
50
0
100
0
50
25_C
VGS(off) = –3 V VDS = 10 V
f = 1 kHz
VGS(off) = –3 V VDS = 10 V
f = 1 kHz
5 V
S)gos– Output Conductance ( m
rDS(on) – Drain-Source On-Resistance ( Ω )
gos – Output Conductance (µS)
gfs – Forward Transconductance (mS)
en – Noise Voltage nV / Hz
