SST441
Vishay Siliconix
www.vishay.com
8-2 Document Number: 70250
S-04031–Rev. E, 04-Jun-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter Symbol Test Conditions Min TypaMax Unit
Static
Gate-Source Breakdown Voltage V(BR)GSS IG = –1 mA, VDS = 0 V –25 –35
Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA –1–3.5 –6V
Saturation Drain CurrentbIDSS VDS = 10 V, VGS = 0 V 6 15 30 mA
VGS = –15 V, VDS = 0 V –1–500 pA
Gate Reverse Current IGSS TA = 125_C–0.2 nA
VDG = 10 V, ID = 5 mA –1–500 pA
Gate Operating Current IGTA = 125_C–0.2 nA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward T ransconductance gfs V
= 10 V, I
= 5 mA 4.5 6 9 mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 5 mA
f = 1 kHz 20 200 mS
Common-Source
Forward T ransconductance gfs V
= 10 V, I
= 5 mA 5.5 mS
Common-Source
Output Conductance gos
VDS = 10 V, ID = 5 mA
f = 100 MHz 30 mS
Common-Source
Input Capacitance Ciss V
= 10 V, I
= 5 mA 3.5
Common-Source
Reverse Transfer Capacitance Crss
VDS = 10 V, ID = 5 mA
f = 1 MHz 1pF
Equivalent Input Noise Voltage enVDS = 10 V, ID = 5 mA
f = 10 kHz 4nV⁄
√Hz
Matching
Differential Gate-Source Voltage |VGS1 –VGS2|VDG = 10 V, ID = 5 mA 7 20 mV
Gate-Source Voltage Differential
Change with Temperature D|VGS1 –VGS2|
DTVDG = 10 V, ID = 5 mA
TA = –55 to 125_C10 mV/_C
Saturation Drain Current RatiocIDSS1
IDSS2 VDS = 10 V, VGS = 0 V 0.98
T ransconductance Ratiocgfs1
gfs2 VDS = 10 V, ID = 5 mA
f = 1 kHz 0.98
Common Mode Rejection Ratio CMRR VDG = 10 to 15 V, ID = 5 mA 90 dB
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NNZ
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.