MCC56-14io1B Thyristor Module VRRM = 2x 1400 V I TAV = 60 A VT = 1.24 V Phase leg Part number MCC56-14io1B Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: TO-240AA Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MCC56-14io1B Ratings Thyristor Conditions Symbol VRSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C VRRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1400 I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1400 V TVJ = 25C 200 A TVJ = 125C 5 mA I T = 100 A TVJ = 25C 1.26 V 1.57 V 1.24 V TVJ = 125 C I T = 100 A I T = 200 A I TAV average forward current TC = 85 C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only RthCH thermal resistance case to heatsink total power dissipation I TSM max. forward surge current It value for fusing V VR/D = 1400 V I T = 200 A Ptot max. Unit 1500 V 1.62 V T VJ = 125 C 60 A 94 A TVJ = 125 C 0.85 V 3.7 m 0.45 K/W K/W 0.20 TC = 25C 222 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.62 kA t = 10 ms; (50 Hz), sine TVJ = 125 C 1.28 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.38 kA t = 10 ms; (50 Hz), sine TVJ = 45C 11.3 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 10.9 kAs t = 10 ms; (50 Hz), sine TVJ = 125 C 8.13 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 125 C 7.87 kAs 74 t P = 300 s pF 10 W 5 W 0.5 W PGAV average gate power dissipation (di/dt) cr critical rate of rise of current TVJ = 125 C; f = 50 Hz repetitive, IT = 150 A t P = 200 s; di G /dt = 0.45 A/s; (dv/dt)cr critical rate of rise of voltage V = VDRM VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 100 mA TVJ = -40 C 200 mA VGD gate non-trigger voltage TVJ = 125C 0.2 V I GD gate non-trigger current 10 mA IL latching current TVJ = 25 C 450 mA I G = 0.45 A; V = VDRM non-repet., I T = 150 A/s 60 A 500 A/s 1000 V/s TVJ = 125C R GK = ; method 1 (linear voltage rise) VD = VDRM tp = 10 s 1.5 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 200 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 0.45 A; di G /dt = 0.45 A/s VR = 100 V; I T = 150 A; V = VDRM TVJ =100 C di/dt = 10 A/s dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 s 20 V/s t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MCC56-14io1B Package Ratings TO-240AA Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 200 Unit A -40 125 C -40 100 C 125 C 81 Weight g MD mounting torque 2.5 4 Nm MT terminal torque 2.5 4 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Ordering Number MCC56-14io1B Similar Part MCMA65P1600TA MCMA85P1600TA Equivalent Circuits for Simulation I V0 13.0 16.0 t = 1 second isolation voltage Ordering Standard terminal to terminal terminal to backside R0 50/60 Hz, RMS; IISOL 1 mA Marking on Product MCC56-14io1B Package TO-240AA-1B TO-240AA-1B * on die level Delivery Mode Box mm 16.0 mm 3600 V 3000 V Quantity 36 Code No. 452750 Voltage class 1600 1600 T VJ = 125 C Thyristor V 0 max threshold voltage 0.85 V R0 max slope resistance * 2.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 9.7 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MCC56-14io1B Outlines TO-240AA 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 6 7 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MCC56-14io1B Thyristor 1400 105 ITSM = 50 Hz IFSM = 80% VRRM 1200 120 VR = 0 V 1000 ITSM 80 I2dt 800 600 60 [A] [A2s] TVJ = 45C ITAVM TVJ = 45C 104 [A] DC 180 sin 120 60 30 100 TVJ = 125C 40 400 TVJ = 125C 20 200 103 0 0.01 0.1 1 0 1 10 t [s] 0 25 50 Fig. 3 Max. forward current at case temperature 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 I t versus time (1-10 ms) 120 10 RthKA K/W 0.8 1 1.2 1.5 2 2.5 3 4 100 80 Ptot 60 40 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 5 VG 2 1 DC 180 sin 120 60 30 [W] 75 100 125 150 TC [C] t [ms] 3 1 [V] 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD , T4 = 125C 0 0 20 40 60 80 0 25 50 ITAVM [A] 75 100 125 0.1 100 150 101 102 103 104 IG [mA] Ta [C] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 500 100 TVJ = 25C RthKA K/W 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 400 Circuit B6 3x MCC56 or Ptot 300 [W] 6 4 3x MCD56 10 tgd [s] 200 limit 1 typ. 100 0 0 40 80 120 160 0 25 IdAVM [A] 50 75 100 125 Ta [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b MCC56-14io1B Thyristor 1400 105 ITSM = 50 Hz IFSM = 80% VRRM 1200 120 VR = 0 V 1000 ITSM 80 I2dt 800 600 60 [A] [A2s] TVJ = 45C ITAVM TVJ = 45C 104 [A] DC 180 sin 120 60 30 100 TVJ = 125C 40 400 TVJ = 125C 20 200 103 0 0.01 0.1 1 0 1 10 t [s] 0 25 50 Fig. 3 Max. forward current at case temperature 2 Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 2 I t versus time (1-10 ms) 120 10 RthKA K/W 0.8 1 1.2 1.5 2 2.5 3 4 100 80 Ptot 60 40 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 5 VG 2 1 DC 180 sin 120 60 30 [W] 75 100 125 150 TC [C] t [ms] 3 1 [V] 20 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD , T4 = 125C 0 0 20 40 60 80 0 25 50 ITAVM [A] 75 100 125 0.1 100 150 Ta [C] 101 102 103 104 IG [mA] Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode) Fig. 5 Gate trigger characteristics 500 100 TVJ = 25C RthKA K/W 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 400 Circuit B6 3x MCC56 or Ptot 300 [W] 6 4 3x MCD56 10 tgd [s] 200 limit 1 typ. 100 0 0 40 80 120 160 0 25 IdAVM [A] 50 75 100 125 Ta [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2016 IXYS all rights reserved 150 0.1 0.01 0.1 1 10 IG [A] Fig. 7 Gate trigger delay time Data according to IEC 60747and per semiconductor unless otherwise specified 20161222b