AP2012SF4C-P22 2.0 x 1.25 mm Infrared Emitting Diode DESCRIPTION z PACKAGE DIMENSIONS SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. FEATURES z z z z 2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness Mechanically and spectrally matched to the phototransistor Package : 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant tia l z APPLICATIONS z z z z on fid z Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control en z RECOMMENDED SOLDERING PATTERN C (units : mm; tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE Part Number AP2012SF4C-P22 Emitting Color (Material) Lens Type Infrared (GaAlAs) Water Clear Po (mW/sr) @ 20mA [2] Viewing Angle [1] Min. Typ. 21/2 0.8 1.5 160 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. 3. Radiant intensity value is traceable to CIE127-2007 standards. (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 1 / 4 AP2012SF4C-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25C Parameter Symbol Emitting Color Wavelength at Peak Emission IF = 20mA peak Spectral Bandwidth at 50% REL MAX IF = 20mA Capacitance Value Unit Max. Infrared 880 - nm Infrared 50 - nm C Infrared 90 - pF Forward Voltage IF = 20mA VF [1] Infrared 1.3 1.6 V Reverse Current (VR = 5V) IR Infrared - 10 uA Temperature Coefficient of Wavelength IF = 20mA, -10C T 85C TC Temperature Coefficient of VF IF = 20mA, -10C T 85C TCV tia l Typ. Infrared 0.3 - nm/C Infrared -1.3 - mV/C on fid en Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at TA=25C Parameter Value Unit PD 85 mW VR 5 V Junction Temperature Tj 125 C Operating Temperature Top -40 to +85 C Storage Temperature Tstg -40 to +85 C DC Forward Current IF 50 mA IFM [1] 1200 mA Electrostatic Discharge Threshold (HBM) - 8000 V Thermal Resistance (Junction / Ambient) Rth JA [2] 320 C/W Thermal Resistance (Junction / Solder point) Rth JS [2] 240 C/W Power Dissipation C Reverse Voltage Peak Forward Current Symbol Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2. Rt h JA ,Rt h JS Results from mounting on PC board FR4 (pad size 16 mm 2 per pad). 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity - Ref JEDEC/JESD625-A and JEDEC/J-STD-033. (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 2 / 4 AP2012SF4C-P22 TECHNICAL DATA SPATIAL DISTRIBUTION RELATIVE INTENSITY vs. WAVELENGTH SF4 80% -15 Ta = 25 C Ta = 25 C 0 15 -30 30 -45 60% 45 60 -60 40% 20% 75 -75 0% 600 650 700 750 800 850 Wavelength (nm) 900 950 1000 1050 -90 1.0 0.5 90 1.0 0.5 0.0 tia l Relative Intensity (a. u.) 100% INFRARED 30 20 10 2.0 1.5 1.0 0.5 0.0 1.0 1.2 1.4 1.6 Forward voltage (V) 1.8 0 10 20 30 40 Forward current (mA) 50 2.5 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 Ambient temperature (C) 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 Ambient temperature (C) TAPE SPECIFICATIONS (units : mm) C REFLOW SOLDERING PROFILE for LEAD-FREE SMD PROCESS Radiant Intensity vs. Ambient Temperature 70 en 40 Ta = 25 C on fid Forward current (mA) Ta = 25 C Permissible forward current (mA) 2.5 Radiant intensity normalised at 20mA 50 0 0.8 Forward Current Derating Curve Radiant Intensity vs. Forward Current Radiant intensity normalised at Ta = 25 C Forward Current vs. Forward Voltage REEL DIMENSION (units : mm) Notes: 1. Don't cause stress to the LEDs while it is exposed to high temperature. 2. The maximum number of reflow soldering passes is 2 times. 3. Reflow soldering is recommended. Other soldering methods are not recommended as they might cause damage to the product. (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 3 / 4 AP2012SF4C-P22 C on fid en tia l PACKING & LABEL SPECIFICATIONS PRECAUTIONARY NOTES 1. The information included in this document reflects representative usage scenarios and is intended for technical reference only. 2. The part number, type, and specifications mentioned in this document are subject to future change and improvement without notice. Before production usage customer should refer to the latest datasheet for the updated specifications. 3. When using the products referenced in this document, please make sure the product is being operated within the environmental and electrical limits specified in the datasheet. If customer usage exceeds the specified limits, Kingbright will not be responsible for any subsequent issues. 4. The information in this document applies to typical usage in consumer electronics applications. If customer's application has special reliability requirements or have life-threatening liabilities, such as automotive or medical usage, please consult with Kingbright representative for further assistance. 5. The contents and information of this document may not be reproduced or re-transmitted without permission by Kingbright. 6. All design applications should refer to Kingbright application notes available at http://www.KingbrightUSA.com/ApplicationNotes (c) 2017 Kingbright. All Rights Reserved. Spec No: DSAO8740 / 1203000168 Rev No: V.3B Date: 09/08/2017 Page 4 / 4