BAT54 / BAT54A / BAT54C / BAT54S — Schottky Diodes
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54 / BAT54A / BAT54C / BAT54S Rev. 1.1.0
November 2014
BAT54 / BAT54A / BAT54C / BAT54S
Schottky Diodes
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions an d s tres sing the parts to these lev el s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
BAT54 L4P SOT-23 3L Tape and Reel
BAT54_D87Z L4P SOT-23 3L Tape and Reel
BAT54A L42 SOT-23 3L Tape and Reel
BAT54C L43 SOT-23 3L Tape and Reel
BAT54S L44 SOT-23 3L Tape and Reel
BAT54S_D87Z L44 SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VRRM Maximum Repetitive Reverse Voltage 30 V
IF(AV) Average Rectified Forward Current 200 mA
IFSM Non-Repetitive Peak Forward Surge Current
Pulse Width = 1.0 second 600 mA
TSTG Storage Temperature Rang e -55 to +150 °C
TJOperating Junction Temperature -55 to +150 °C
12
3
L4P
1
2
3
SOT-23 BAT54
BAT54C = L4P
= L43 BAT54A = L42
BAT54S = L44
MARKING
Connection Diagram
3
12
3
12
3
12
1
3
BAT54 BAT54A
BAT54SBAT54C
2NC
BAT54 / BAT54A / BAT54C / BAT54S — Schottky Diodes
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54 / BAT54A / BAT54C / BAT54S Rev. 1.1.0 2
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
PDPower Dissipation 290 mW
RθJA Thermal Resistance, Junction-to-Ambient 430 °C/W
Symbol Parameter Conditions Min. Max. Unit
VRBreakdown Voltage IR = 10 μA30V
VFForward Voltage
IF = 0.1 mA 240 mV
IF = 1 mA 320 mV
IF = 10 mA 400 mV
IF = 30 mA 500 mV
IF = 100 mA 0.8 V
IRReverse Leakage VR = 25 V 2 μA
CTTotal Capacitance VR = 1 V, f = 1.0 MHz 10 pF
trr Reverse Recovery Time IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω5.0 ns
BAT54 / BAT54A / BAT54C / BAT54S — Schottky Diodes
© 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BAT54 / BAT54A / BAT54C / BAT54S Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Vol tage
Figure 3. Total Capacitance vs. Reverse Voltage
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100oC
75oC
25oC
-25oC
IF-Forward Current [A]
VF-Forward Voltage [V]
0 5 10 15 20 25 30
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000 TA=125oC
TA=100oCTA=75oC
TA=25oC
TA=-25oC
Reverse Current, IR [μA]
Reverse Voltage, VR [V]
012345678910
2
4
6
8
10
12
14
16
Cap a c ita n c e [pF]
VR-Reverse Voltage [V]
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Rev. I76
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