V
RRM
= 400 V - 600 V
I
F(AV)
= 75 A
Features
• High Surge Capability
• Types from 400 V to 600 V V
RRM
Three Phase Package
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
DC blocking voltage V
DC
V
Otit t
T
°C
M3P75A-40
400
400
600
600
M3P75A-60
55 t 150
M3P75A-40 thru M3P75A-60
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Conditions
55 t 150
• Not ESD Sensitive
Silicon Standard Recovery
Three Phase Devices
O
pera
ti
ng
t
empera
t
ure
T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
A
verage forward current (per leg) I
F(AV)
A
Maximum instantaneous forward
voltage (per leg)
µA
mA
Thermal characteristics
Maximum thermal resistance,
j
unction - case
(p
er le
g)
R
Θjc
°C/W
-
55
t
o
150
-55 to 150 -55 to 150
M3P75A-40 M3P75A-60
I
FM
= 75 A, T
j
= 25 °C
Conditions
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-
55
t
o
150
V
F
T
j
= 25 °C
V
10 10
0.60 0.60
1.10 1.10
T
C
= 120 °C 75 75
Peak forward surge current I
FSM
t
p
= 8.3 ms, half sine 1000 1000 A
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg) T
j
= 150 °C 10 10
I
R
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1
M3P75A-40 thru M3P75A-60
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M3P75A-40 thru M3P75A-60
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
3
