MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE FS70VS-2 OUTLINE DRAWING Dimensions in mm a je10.SMAX.__ x <= \ = \ ~ \ ae oun APG q Bo) o alo _ + J oo " Ls ; r |. 0.8 OE at 2 eta bo @ B 3} a Oo BiG ol @#10V DRIVE @) GATE 2: DRAIN e Voss Dee OO Eman Em eben tentoes 100V > SOURCE 2) DRAIN @ IDS (ON) (MAX) corr cect cette erence nannies 20mQ WD crete reece cece ett e nate e ete ee een seventaeaeeaane 70A Integrated Fast Recovery Diode (TYP.) -:--: 120ns 10-2208 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS (Te-= 25C) Symbol Parameter Conditions Ratings Unit Vpss Drain-source voltage Vas = 0V 100 Vv Vass Gate-source voltage Vos = OV +20 v Ip Drain current 70 A lom Drain current (Pulsed) 280 A IDA Avalanche drain current (Pulsed) | L = 100uH 70 A Is Source current 70 A Ism Source current. (Pulsed) 280 A Pb Maximum power dissipation 125 Ww Teh Channel temperature ~55 ~ +150 70) Tstg Storage temperature 55 ~ +150 C _ Weight Typical value 1.2 9g : MITSUBISHI e962 ate ELECTRICELECTRICAL CHARACTERISTICS (teh = 25C) MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE Limits Symbol Parameter Test conditions Unit ym ; ' Min. Typ. Max. " V (BR) DSS | Drain-source breakdown voltage | 1D = imA, VDS = OV 400 _ Vv lass Gate leakage current VGs = +20V, VDs = OV _ _ 40.1 pA loss Drain current Vos = TO0V, Vas = 0V _ _ 0.1 mA Vas (th) | Gate-source. threshold voltage ID = 1mA, VDS = 10V 2.0 3.0 40 v rDS(ON) | Drain-source on-state resistance | ID.= 354, Vas = 10V _ 14 20 mQ Vos (ON) | Drain-source on-state vaitage | Ip = 35A, Vas = 10V _ 0.49 0.7 Vv i yts | Forward transter admittance _ | lo = 35A, Vos = 10V _ 53 = S$ Ciss Input capacitance _ 6540 _ pF Coss Output capacitance Vos = 10V, Vas = OV, f = 1MHz _ 4150 pF Cres Reverse transfer capacitance = 500 _ pF td {on) Tum-on delay time _ 95 _ ns tr Rise time _ Vob = 50V, lp = 35A, Vas = 10V, RGEN = Ras = 500 = 178 = ns td {off} Turn-off delay time 330 _ ns tf Fall time _ 190 =_ ns Vsp Source-drain voltage is = 35A, Vas = OV _ 1.0 1.5 Vv Rth (ch-c)_ | Thermal! resistance Channel to case _ _ 1.00 Cw ter Reverse recovery time {5 = 70A, dis/dt = 100A/is _ 120 _ ns PERFORMANCE CURVES POWER! DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 200 3 2 tw = 10us = 102 a 160 = 7 a a 5 z ~ 3 D 420 z 2 Ee ira] a x 101 80 3S : z 3 < 2 Ww = 40 5 10 a 7/P Tc = 25C 5 Pulse % 50 100 150 200 35 571009 23 57101 23 57102 23 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V) QUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) 400 Vas = 20V 10V 8V Vas = 20V 10V 8V 6V To = 28C #/|% Te = 26C Pulse Test Pulse Test =< 80 = 40 2 ~ 8 ~ 5 60 Pp = 125W 5 30 a iv r Bo 40 B 20 z Z < < B 20 & 10 4v 0 0 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SOURCE VOLTAGE Vos (V) MITSUBISHI 2 - 963 ELECTRIC_ MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE DRAIN-SOURCE ON-STATE VOLTAGE Vobs (on) (V) DRAIN CURRENT Ip (A) CAPACITANCE Ciss, Coss, Crss (pF) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) Te = 25C Pulse Test 9 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) TRANSFER CHARACTERISTICS (TYPICAL) 100 Te = 25C Vos = 2.0V Pulse Test 60 40 20 0 4 8 12 16 20 GATE-SOURCE VOLTAGE Vas (V) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 Toh = 25C 105 Ft = IMHz 7} Ves =0V no anS we ave ww a = Crss 3 57100 23 57101 23 5710? 23 DRAIN-SOURCE VOLTAGE Vos (V) 4 MITSUBISHI ELECTRIC DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (mQ) FORWARD TRANSFER ADMITTANCE | yis |(S) SWITCHING TIME (ns) ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0 Te = 25C Pulse Test 16 Vos = 10V 12 S = 10' 20V 0 3.57100 23 57101 23 5710? 23 DRAIN CURRENT Io (A) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) = Qo ~ Vos = 10V Puise Test Ny oO AO ' To = 26C 10 75C 125C 10 2 345 710' 2 345 7108 DRAIN CURRENT !0 (A) SWITCHING CHARACTERISTICS (TYPICAL) =~ Oo a tdott) pp whon = mn woaan To = 25C Vod = 50V Vas = 10V AGEN = Res = 5002 100 2 345 7101 a 2 2 345 7102 DRAIN CURRENT Ip (A}DRAIN-SOURCE ON-STATE RESISTANCE rps (ON) (tC) DRAIN-SOURCE ON-STATE RESISTANCE Ds (ON) (26C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (er) DSS (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (Br) oss (25C) GATE-SOURCE VOLTAGE Vas (V) 20 16 12 py waay 2 - Qo a Mm FO ~l 10-1 0.4 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Te = 26C io = 70A Vds = 20V 40 80 120 160 6200 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V io = 1/2Ip Pulse Test ~50 0 50 100 =: 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGs = 0V ip = 1mA ~50 0 50 100.1 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE. 2th (ch-cj (C/W) ~~ Nw om 10-2 SOURCE CURRENT is (A) GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) Q = no avS wo on oO nat 9S iN) MITSUBISHI Nch POWER MOSFET FS70VS-2 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100 Ves = OV ! Pulse Test ' 80 " mn 60 to = 125 40 20 % 0.4 0.8 1.2 16 2.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vos = 10V ip = ImA -50 0 50 400 150 CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS = 2 0.05 0.02 0.01 Pulse 40-423 5710-323 5710-223 5710-123 5710023 57101 23 57102 PULSE WIDTH tw (s) 3 MITSUBISHI 2 - 965 EL ECTRIC