IW4027B
20
MAXIMUM RATINGS*
Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) -0.5 to +20 V
VIN DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V
VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
IIN DC Input Current, per Pin ±10 mA
PDPower Dissipation in Still Air, Plastic DIP+
SOIC Package+ 750
500 mW
PDPower Dissipation per Output Transistor 100 mW
Tstg Storage Temperature -65 to +150 °C
TLLead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package) 260 °C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 3.0 18 V
VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
TAOperating Temperature, All Package Types -55 +125 °C
Thi s device contains p rote ction c ircuitr y to guard a gainst damage due to hi gh static voltage s or electr ic
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated
voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range
GND≤(VIN or VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC).
Unused outputs must be left open.