MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features * This device is designed for application as a video output to drive color CRT and other high voltage applications. * Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B TO-92 B SOT-23 SOT-223 Mark: 1D E B C Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Value Units VCEO Collector-Emitter Voltage 300 V VCBO Collector-Base Voltage 300 V VEBO Emitter-Base Voltage IC TJ, TSTG Parameter Collector Current - Continuous Operating and Storage Junction Temperature Range 6 V 500 mA -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol TA=25C unless otherwise noted Max Parameter MPSA42 *MMBTA42 **PZTA42 Total Device Dissipation Derate above 25C 625 5.0 240 1.92 1000 8.0 RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 PD Units mW mW/C C/W 515 C/W 125 * Device mounted on FR-4PCB 1.6" x 1.6" x 0.06". ** Device mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 2009 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. B2 www.fairchildsemi.com 1 MPSA42 / MMBTA42 / PZTA42 -- NPN High Voltage Amplifier October 2009 Symbol TA=25C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 300 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 A, IC = 0 6 V ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 A IEBO Emitter-Cutoff Current VEB = 6 V, IC = 0 0.1 A On Characteristics* hFE DC Current Gain VCE = 10 V, IC = 1.0 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 30 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 20 mA, IB = 2.0 mA 0.5 V VBE(sat) Base-Emitter On Voltage IC = 20 mA, IB = 2.0 mA 0.9 V 25 40 40 Small Signal Characteristics fT Current Gain Bandwidth Product IC = 10mA, VCE = 20V, f = 100MHz Ccb Collector-Base Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 50 MHz 3.0 pF * Pulse Test: Pulse Width300s, Duty Cycle2% (c) 2009 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. B2 www.fairchildsemi.com 2 MPSA42 / MMBTA42 / PZTA42 -- NPN High Voltage Amplifier Electrical Characteristics o 125 C 120 VCE(SAT)- COLLECTOR-EMITTER VOLTAGE [V] 140 VCE=10V o 100 C hFE- DC CURRENT GAIN o 75 C 100 o 25 C 80 60 o -40 C 40 20 0 1 10 100 1000 100 10 1 o 100 C o TA = 125 C 0.1 o 75 C o 25 C 0.01 1 10 100 1000 IC- COLLECTOR CURRENT [mA] IC- COLLECTOR CURRENT [mA] Figure 1. DC Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1.0 1.2 VBE(ON)- BASE-EMITTER VOLTAGE [V] VBE(SAT)- BASE-EMITTER VOLTAGE [V] o -40 C o -40 C 0.8 o 25 C o 125 C 0.6 o 100 C o 75 C 0.4 0.2 1 10 o TA = -40 C 1.0 o TA = 25 C 0.8 0.6 o TA = 75 C o 0.4 TA = 100 C o TA = 125 C 0.2 0.0 100 1 10 IC- COLLECTOR CURRENT [mA] 100 1000 IC- COLLECTOR CURRENT [mA] Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter ON Voltage vs Collector Current CAPACITANCE [pF] 100 CIB 10 COB 1 0 2 4 6 8 10 12 14 16 18 20 REVERSE BIAS VOLTAGE [V] Figure 5. Collector-Cutoff Current vs Ambient Temperature Figure 6. Collector-Base and Emitter-Base Capacitance vs Reverse Bias Voltage (c) 2009 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. B2 www.fairchildsemi.com 3 MPSA42 / MMBTA42 / PZTA42 -- NPN High Voltage Amplifier Typical Performance Characteristics MPSA42 / MMBTA42 / PZTA42 -- NPN High Voltage Amplifier Typical Performance Characteristics (Continued) 1.0 PD - POWER DISSIPATION [W] SOT-223 0.8 0.6 TO-92 0.4 0.2 SOT-23 0.0 0 25 50 75 100 125 150 o TC - CASE TEMPERATURE [ C] Figure 7. Power Dissipation vs Ambient Temperature (c) 2009 Fairchild Semiconductor Corporation MPSA42 / MMBTA42 / PZTA42 Rev. B2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com