SEMICONDUCTOR BF422 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATIONS. B C FEATURES A High Voltage : VCEO>250V Complementary to BF423. N E K G J D MAXIMUM RATING (Ta=25) UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 250 V Emitter-Base Voltage VEBO 5 V DC IC 50 Peak ICP 100 Collector Power Dissipation PC 625 mW Base Current IB 50 mA Junction Temperature Tj 150 Tstg -65150 Collector Current Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE mA TO-92 ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCB=200V, IE=0 - - 10 nA VCB=200V, IE=0, Tj=150 - - 10 A - - 50 nA Collector Cut-off Current ICBO Emitter Cut-off Current IEBO VEB=5V, IC=0 DC Current Gain hFE VCE=20V, IC=25mA 50 - - - VCE(sat) IC=30mA, IB=5mA - - 0.6 V Collector-Emitter Saturation Voltage Base-Emitter Voltage VBE VCE=-20V, IC=25mA - 0.75 - V Transition Frequency fT VCE=10V, IC=10mA 60 - - MHz Reverse Transfer Capacitance Cre VCB=30V, IE=0, f=1MHz - - 1.6 pF 1998. 10. 31 Revision No : 2 1/3 BF422 I C - VCE (LOW VOLTAGE REGION) 1.2 0.8 0.6 40 0.4 0.3 30 0.2 20 0.15 0.1 I B =0.05mA 10 0 0 4 8 12 20 24 10 30 5 10 0 0.3 28 1 3 VCE(sat) - I C COMMON EMITTER VCE =10V Ta=100 C Ta=25 C Ta=-25 C 50 30 10 1 3 10 30 100 2 0.5 0.3 I C /I B =10 0.1 5 0.05 0.03 2 0.01 0.3 1 3 0.05 100 Ta=25 C Ta=-25 C COMMON EMITTER VCE =10V 40 30 00 C Ta=100 C 50 20 Ta=1 COLLECTOR CURRENT I C (mA) 0.5 0.3 0.1 30 I C - V BE COMMON EMITTER I C /IB =5 1 10 COLLECTOR CURRENT I C (mA) VCE(sat) - I C 2 100 COMMON EMITTER Ta=25 C 1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 30 h FE - I C 100 10 0 0.01 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 1998. 10. 31 10 COLLECTOR CURRENT I C (mA) 300 0 0.3 50 COLLECTOR-EMITTER VOLTAGE VCE (V) 500 DC CURRENT GAIN h FE 16 VCE =20V 100 Ta=25 C Ta=-25 C 0 COMMON EMITTER Ta=25 C 300 DC CURRENT GAIN h FE 1.6 50 500 COMMON EMITTER Ta=25 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT I C (mA) 60 h FE - I C Revision No : 2 100 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 2/3 BF422 COLLECTOR OUTPUT CAPACITANCE C ob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) C ob .C re - V CB f T - IC TRANSITION FREQUENCY f T (MHz) 10 I E =0 f=1MHz Ta=25 C 8 6 4 C ob 2 C re 0 0 40 80 120 160 200 240 280 500 COMMON EMITTER Ta=25 C 300 VCE =20V 100 50 30 VCE =10V 10 0.3 1 COLLECTOR-BASE VOLTAGE VCB (V) 100 600 400 200 0 120 160 AMBIENT TEMPERATURE Ta ( C) 200 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION P C (mW) 800 I C MAX.(PULSED) * 1 10 0ms 0m s * * s 1m 200 80 30 SAFE OPERATING AREA 1000 40 10 COLLECTOR CURRENT I C (mA) P C - Ta 0 3 I C MAX.(CONTINUOUS) 50 30 DC * OP ER AT IO N 10 5 3 * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 1 0.5 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) 1998. 10. 31 Revision No : 2 3/3