F 0496A
GaAs-Infrarot-VCSEL- Chip (850 nm)
GaAs Infrared VCSEL Chip (850 nm)
Vorläufige Daten / Preliminary Data
2003-03-26 1
Wesentliche Merkmale
• Technologi e basierend auf selektiver Oxidati on
• Sehr hohe Datenrate (GBit/s) möglich
• Oberflächenstrahler
• Emissionswellenlänge 850nm
• Multimodebetrieb
• Zuverlässigkeit gemäß Bellcore Standard
Anwendungen
• Faseroptische Datenübertragung
• Parallel optical data link
• Laserdrucker
• Näherungssensoren
• Reflexlichtschranken
• Gabellichtschranken
Typ
Type Bestellnummer
Ordering Code Beschreibung
Description
F 0496A on request Infrarot emittierender VCSEL-Chip, Oberseite Anodenan-
schluss
Infrared emitting VCSEL die, top side anode connection
Features
• Technology based on selective oxidation
• Very high data rate (GBit/s) possible
• Surface emitter
• 850 nm emission wavelength
• Multimode operation
• Reliability acc. Bellcore Standard
Applications
• Fiber Optic data link
• Parallel optical data link
• Laser printing
• Proximity sensors
• Reflective sens or
• Slotted interrupter
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F 0496A
Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C)
Electrical values (measured on TO18 header without resin, TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 10 mA
λpeak 830 850 870 nm
Spektrale Bandbreite bei 50% von Imax,
IF = 10 mA
Spectral bandwidth at 50% of Imax
∆λ 0.7 nm
Schwellstrom
Threshold current Ιth 13 5mA
Steilheit
Slope efficiency η0.2 0.25 0.4 mW/mA
Schaltzeiten, Ie von 10% auf 90% und von
90% auf 10%, bei IF = 6 mA, RL = 50 Ω
Switching times, Ie from 10% to 90% and from
90% to 10%, IF = 6 mA, RL = 50 Ω
tr, tf200 ps
Durchlaβspannung
Forward voltage
IF = 10 mA, tp = 20 ms VF1.7 2.1 2.5 V
Dynamischer Widerstand
Dynamic Resistance RS30 60 100 V
Sperrstrom
Reverse current
VR = 3 V
IR0.01 µA
Gesamtstrahlungsfluβ4)
Total radiant flux4)
IF = 10 mA, tp = 20 ms
Φe1.5 1.8 mW
Detuning Topt 10 25 40 °C
Temperaturkoeffizient von λpeak, IF = 10 mA
Temperature coefficient of λpeak, IF = 10 mA TCλ0.06 nm/K
F 0496A
2003-03-26 3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Chipkantenlänge (x-Richtun g)
Length of chip edge (x-direction) Lx0.25 0.27 0.29 mm
Chipkantenlänge (y-Richtun g)
Length of chip edge (y-direction) Ly0.20 0.22 0.24 mm
Durchmesser der aktiven Chipfläche
Dimension of the active chip area D15 µm
Durchmesser des Wafers
Diameter of the wafer D76.2 mm
Chiphöhe
Die height H160 185 210 µm
Grenzwerte3) (TA = 25 °C)
Maximum Ratings3)
Bezeichnung
Parameter Symbol
Symbol Werte
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 85 °C
Sperrspannung
Reverse voltage VR3V
Durchlaßstrom
Forward current IF20 mA
F 0496A
2003-03-26 4
Relati ve Sp ectral Emi ssi o n 2)
Irel = f (λ)
Forward Curr e nt2) IF = f (VF)
Optical power2) Φrel = f (TΑ)
OHF00141
0840 nm
λ
rel
Ι
860850
20
40
60
80
100
120
%
OHF00143
0
I
F
F
V
10-3
-2
10
-1
10
100
101
102
mA
0.5 1 1.5 2 2.5V
OHF01179
-20
P
opt
T
0
mW
˚C
0 20 40 60 100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.8
Radiant Intensity2)
Threshold Current2) ,th = f(TΑ)
Far Field Emissi on Pat tern2)
Φe
Φe 10 mA = f (IF)
OHF00142
00mA
e rel
Φ
10
0.2
0.4
0.6
0.8
1.0
1.2
2468
F
I
OHF00145
0
I
th
A
T
20 40 60 80 100˚C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
mA
OHF01180
-30
a.u.
-20 -10 010Deg 30
θ
I
4 mA
8 mA
10 mA
15 mA
Near Field Emission Pattern2)
Spectral Width2) FWHM = f (T)
OHF01182
I
X
a.u.
8 mA
10 mA
15 mA
4 mA
6 mA
a.u.
OHF01181
0
FWHM
T
0˚C
20 40 60 80 100
5
10
15
20
25
Deg
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F 0496A
Maßzeichnung
Chip Outlines
Maße werden als typische1) Wer te wie folgt angegebe n: mm (inch) / D imensions are specified as t ypical1) values as
follows: mm (inch).
GMOY6074
0.185 (0.0073)
0.22 (0.0087)
0.27 (0.0106)
Active area
Bonding area
Bonding area
Active area
p
n
2003-03-26 6
F 0496A
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform ation gen erally descri bes the type of compone nt and shall not be considered as assured ch aracteristic s or
detaile d sp ec if ic at ion.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous subs ta nc es . For in fo rm at ion on the type s in qu es t ion please contac t our sales org aniz ation.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Com pon en ts used in life-suppor t d evi ces or system s must be expressly auth o r ized b y us f or su ch p urp o se!
Critical components5), may only be used in life-support devices or systems6) with the express written approval of
OSRAM OS.
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a sp ec if ied v alue.
2) Based on data measured in TO18 pack age. They rep resen t t ypica l1) dat a.
3) Maximum ratings are strongly package dependent and may differ between different packages. The values given
repres ent the chip in an TO1 8 pac k age and are only valid for this pac k age.
4) Value is refe renc ed to the vendor' s measurem ent sys t em ( co rrelation to custom er produc t( s) is requ ired).
5)A critical component i s a component used in a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
6)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sust ain human life. If th ey fail , it is reasonable t o as su m e th at the health of the user m ay be endangered.
