VDRM IT(AV)M IT(RMS) ITSM VT0 rT = 6500 V = 830 A = 1310 A = 16x103 A = 1.24 V = 1.015 mW Phase Control Thyristor 5STP 08F6500 Doc. No. 5SYA1056-03 Mar. 13 * Patented free-floating silicon technology * Low on-state and switching losses * Designed for traction, energy and industrial applications * Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions tp = 10 ms, f = 5 Hz Max. surge peak forward and VDSM, Tvj = 5...125C, Note 1 reverse blocking voltage VRSM Max repetitive peak forward VDRM, and reverse blocking voltage VRRM Max crest working forward and reverse voltages VDWM, VRWM Critical rate of rise of commutating voltage dv/dtcrit 5STP 08F6500 6500 Unit V 6500 V 4340 V 2000 V/s f = 50 Hz, tp = 10 ms, tp1 = 250 ms, Tvj = 5...125C, Note 1, Note 2 Exp. to 4340 V, Tvj = 125C Characteristic values Parameter Forward leakage current Symbol Conditions IDRM VDRM, Tvj = 125C Reverse leakage current IRRM min typ VRRM, Tvj = 125C max 200 Unit mA 200 mA max 24 Unit kN Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +25 C Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051. Mechanical data Maximum rated values 1) Parameter Mounting force Symbol Conditions FM min 14 typ 22 Acceleration a Device unclamped 50 m/s2 Acceleration a Device clamped 100 m/s2 Characteristic values Parameter Weight Symbol Conditions m Housing thickness H Surface creepage distance DS 25 mm Air strike distance Da 14 mm FM = 22 kN, Ta = 25 C min typ 26.5 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max 0.55 26.9 Unit kg mm 5STP 08F6500 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70 C max Unit 830 A 1310 A 3 tp = 10 ms, Tvj = 125 C, sine half wave, VD = VR= 0 V, after surge tp = 10 ms, Tvj = 125 C, sine half wave, VR= 0.6*VRRM, after surge 16x10 A 1.28x106 A2s 10x103 A 500x103 A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 1000 A, Tvj = 125 C 2.25 V Threshold voltage V(T0) IT = 600 A - 1800 A, Tvj= 125 C 1.24 V Slope resistance rT 1.015 mW Holding current IH Tvj = 25 C 90 mA Tvj = 125 C 60 mA Tvj = 25 C 500 mA Tvj = 125 C 200 mA max 50 Unit A/s Latching current IL min typ max Unit Switching Maximum rated values 1) Parameter Critical rate of rise of onstate current Critical rate of rise of onstate current Symbol Conditions di/dtcrit Tvj = 125 C, ITRM = 1300 A, di/dtcrit VD 0.67 VDRM, IFG = 2 A, tr = 0.5 s Circuit-commutated turn-off tq time min typ Cont. f = 50 Hz Cont. f = 1Hz Tvj = 125C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/s, VD 0.67xVDRM, dvD/dt = 20 V/s 1000 A/s 1430 s Characteristic values Parameter Reverse recovery charge Reverse recovery current Gate turn-on delay time Symbol Conditions Qrr Tvj = 125C, ITRM = 2000 A, V R = 200 V, IRM diT/dt = -1.5 A/s tgd min 1870 typ 40 Tvj = 25 C, VD = 0.4xVRM, IFG = 2 A, tr = 0.5 s max 3200 Unit As 68 A 3 s ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1056-03 Mar. 13 page 2 of 7 5STP 08F6500 Triggering Maximum rated values 1) Parameter Peak forward gate voltage Symbol Conditions VFGM Peak forward gate current min typ max 12 Unit V IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 7 W Characteristic values Parameter Gate-trigger voltage Symbol Conditions VGT Tvj = 25 C min typ max 2.6 Unit V Gate-trigger current IGT Tvj = 25 C Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125C 10 mA 400 mA Thermal Maximum rated values 1) Parameter Operating junction temperature range Symbol Conditions Tvj min Storage temperature range Tstg typ -40 max 125 Unit C 140 C max 17 Unit K/kW Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) Double-side cooled to case Fm = 14...24 kN min typ Rth(j-c)A Anode-side cooled Fm = 14...24 kN 33 K/kW Rth(j-c)C Cathode-side cooled Fm = 14...24 kN 35 K/kW Double-side cooled Fm = 14...24 kN 4 K/kW Single-side cooled Fm = 14...24 kN 8 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Z th(j- c) (t) = a R i (1 - e- t/t i ) i =1 i 1 2 3 4 Ri(K/kW) 10.569 4.091 1.319 1.030 ti(s) 0.3723 0.0630 0.0151 0.0041 Fig. 1 Transient thermal impedance (junction-tocase) vs. time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1056-03 Mar. 13 page 3 of 7 5STP 08F6500 Max. on-state characteristic model: Max. on-state characteristic model: VT25 = ATvj + BTvj x IT + CTvj x ln(IT +1) + DTvj x IT VT125 = ATvj + BTvj x IT + CTvj x ln(IT +1) + DTvj x IT A25 129.7x10-6 Valid for IT = 100 - 20000 A B25 C25 492.6x10-6 216.6x10-3 D25 1.562x10-3 A125 96.22x10-6 Valid for IT = 100 - 20000 A B125 C125 D125 -6 -3 636.8x10 150.4x10 18.17x10-3 Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1056-03 Mar. 13 page 4 of 7 5STP 08F6500 IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) 2..5 A 1.5 IGT 2 A/ms 1 ms 5...20 ms diG/dt IGon 10 % t tr tp (IGM) tp (IGon) Fig. 6 Recommended gate current waveform Fig. 8 Reverse recovery charge vs. decay rate of on-state current Fig. 7 Max. peak gate power loss Fig. 9 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1056-03 Mar. 13 page 5 of 7 5STP 08F6500 Turn-on and Turn-off losses Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves Total power loss for repetitive waveforms: IT(t) IT(t), V(t) PTOT = PT + Won x f + Woff x f -diT/dt where t Qrr V(t) -IRRM -V0 T 1 PT = o IT x VT (IT ) dt T 0 -dv/dtcom -VRRM Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1056-03 Mar. 13 page 6 of 7 5STP 08F6500 H Fig. 16 Device Outline Drawing Related documents: 5SYA 2020 5SYA 2049 5SYA 2051 5SYA 2034 5SYA 2036 5SZK 9104 5SZK 9105 Design of RC-Snubber for Phase Control Applications Voltage definitions for phase control thyristors and diodes Voltage ratings of high power semiconductors Gate-Drive Recommendations for PCT's Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for current version of documents. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1056-03 Mar. 13