TEXAS INSTR COPTOF be DE padbi72b 0036752 1g 8964726 TEXAS INSTR COPTO) 62C 36752 D cen RE T= 33-17 Ee es TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP3OE, TIP3OF . . P-N-P SILICON POWER TRANSISTORS JULY 1968 - REVISED OCTOBER 1984 Designed for Complementary Use With TIP29 series 30 W at 25C Case Temperature 1 A Continuous Collector.Current 3 A Peak Collector Current Minimum ft of 3MHz at 10V,0.2A Customer Specified Selections Available Designed for Power Amplifier and High-Speed Switching Applications davice schematic TO-220AB PACKAGE EMITTER COLLECTOR BASE THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB absolute maximum ratings at 25C case temperature (unless otherwise noted) TIP30O TIP30A TIP30B TIP3OC current current (see current area at case temperature at case tamperature {see Note 2) at temperature (see Note 3} n od > Oo a = energy collector storage temperature range mm case 1 NOTES: 1. This vatue applies for ty < 0.3 ms, duty cycle < 10%. 2. Derate linearly to 150C case temperature at the rate of 0.24 W/C. 3. Derate linearly to 150C free-air temperature at the rate of 16mW/C. 4. This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. 1283 * : TEXAS y INSTRUMENTS POST OFFICE BOX 225012 DALLAS, TEXAS 75265TEXAS INSTR COPTOF G2 DE peibi7v2s oosn7s3 b | 8861726 TEXAS INSTR COPTO) ae 36753. TIP30, TIP30A, TIP3OB, TIP30C, 7-33-19 | TIP30D, TIP30E, TIP30F } P-N-P SILICON POWER TRANSISTORS absolute maximum ratings at 25C case temperature (unless otherwise noted) current current current area at case temperature at case temperature at temperature energy storage temperature range mm case NOTES: 1. This value applies for ty < 0.3 ms, duty cycle 10%. . 2. Derate linearly to 150C case temperature at the rates of 0.24 W/C, 3. Derate linearly to 150C free-air temperature at the rate of 16 mW/C, 4. This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2. electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS P30 TIPSOA TIPSOB TIP30C UNIT MIN TYP MAX {MIN TYP MAX|MIN TYP MAX|MIN TYP MAX I = 30mA, Ig = 0, : ca ~60 80 100 Vv V(BRICEO See Note 5 40 VcE= 30V, Ip=O 0.3 -0.3 mA Iceo Vce= -60V, Ig=0 =03 =03 I Voce = - 80V, Vee = 0 -0.2 Vee = ~-100V, Ver =0 0.2 ICES CE BE mA Voce = -120V, Vpp=0 -0.2 Voce = 140V, Vgp=0 O.2 leBo Veg = 5V, Ic =0 -1 -i -1 -1 mA Vce = -4V, I = -0.24, 20 2 20 20 hee See Notes 5 and 6 9 i Voe=-4V, Ice TA Te 75 | 15 75 | 15 78 | 15 75 =| See Notes 5 and 6 Vee = -4V, Io = -14, - -1.3 -1.3 -1.3 ~-1.3 Vv ~ VBE See Notes 5 and 6 IB = -12 . =-TA, oO Veeisat) B= 125mA, ig=TA -0.7 -0.7 -0.7 -o71 Vv 2 See Notes 5 and 6 = VcE=- ' = -0.2A, 5 hfe Ce=~10V, Ie = -0 20 20 20 20 @ f= 1kHz : : n Vce=-10V, Ic = -0.2A, hy , 3 3 Intel f= 1MHz 3 3 NOTES . These parameters must be measured using pulse techniques, tw = 300 ys, duty cycle < 2%. 6, These parameters are measured using voltage-sensing contacts separate from the current-carrying contacts. ' i 4 i i. i : 5-12 TEXAS ay rae | : INSTRUMENTS . POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 i i . | ee - a a a . = & | . x 1289 -_ TExAs 5-13 INSTRUMENTS POST OF FICE BOX 225012 DALLAS, TEXAS 75265 : I re Ell TEXAS INSTR TOPTOT be DE Bate1reb o036755 Q LT 8967726 TEXAS INSTR COPTO) TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIP3OF P-N-P SILICON POWER TRANSISTORS 62C 36755 | 7-33-/9 os nes PARAMETER MEASUREMENT INFORMATION : . ~* . INPUT ) monttor > me Vest 10V * + Von = 8.5 aE > T 4NO14 Raat = 368.2 AAV ~< 2N4301 s6n 1N914 1N914 1N914 +t 270 pF Rep2 = 562 F1 Vgen Vep2 =4.3V = OUTPUT MONITOR RL =302 T_ e ADJUST FOR INPUT MONITOR TEST CIRCUIT INPUT i I | ton OUTPUT MONITOR VOLTAGE WAVEFORMS NOTES: A. Vgenis 4 30-V pulse into a 50 Q termination. a 43V 10% . MONITOR 0 Vv __ ' i one os a om so . Von = -8.5V --+ 90% I = 5 Oo s. a w -B. The Vgan waveform is supplied by the following characteristics: t,< 15ns, t< 15ns, Zout = 502, tw = 20ps, duty cycle < 2%. C. Waveforms are monitored on an oscilloscope with the following characteristics: t; 15ns, Rin > 10 MQ, Cin < 11.5 pF. D. E. The d-c power supplies may require additional bypassing in order to minimize ringing. Resistors must be noninductive types. FIGURE 1. RESISTIVE-LOAD SWITCHING 5-14 TEXAS % INSTRUMENTS POST OFFICE BOX 225012 @ DALLAS, TEXAS 75265 1283TEXAS INSTR {fOPTO} be DE patb1726 O03b75b 1 i 1283 5S61726 TEXAS INSTR COPTO) . 620 36756 D1 or TIP30, TIP30A, TIP3OB, TIP30C, TIP30D, TIP3OE, TIP30F P-N-P SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 7T33-/9 Vce MONITOR Li (See Note A) R 2N4301 561 lz (See Note Al 202 INPUT Veco = 10V = cc '. IgMONITOR Reese = 1002 R,=O.10 Veni =10V = Tt 34 TEST CIRCUIT pI ~ ty = 4ms t (See Note B) 6V--- INPUT VOLTAGE COLLECTOR CURRENT -18A oO = a 0. _ S bh TIP30A TIP30B P30c 0.04 P30D TIP30E TIP30F 1 4 10 40 100 400 1000 VoECollector-Emitter VoltageV FIGURE 4 sano {cCollector CurrentA 2 = 0.01 NOTE 7: This combination of maximum voltage and current values may be achieved only when switching from saturation te cutoff with a clamped inductive load. . } - 5-16 TEXAS a 1283 INSTRUMENTS POST OFFICE 80X 225012 @ DALLAS, TEXAS 75265TEXAS INSTR COPTOF be DE atb1 726 0036758 & Tr piiacaiesememmmens 5861726 TEXAS INSTR COPTO) ~ - *" 62C 36758" D 7 TIP30, TIP30A, TIP30B, TIP30C, TIP30D, TIP30E, TIPSOF P-N-P SILICON POWER TRANSISTORS THERMAL INFORMATION T- 3s 3s -/ 9 DISSIPATION DERATING CURVE 40 30 20 10 P-yMaximum Continuous Device DissipationW 0 0 25 50 vi) 100 4125 150 TcoCase TemperatureC FIGURE 5 on a > QO a od we TEXAS 517 INSTRUMENTS POST OF FICE BOX 226012 DALLAS, TEXAS 75265 1283