MB6S-E345 - VISHAY - Datasheet.Live

MB2S, MB4S, MB6S

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Revision: 19-Aug-13 1Document Number: 88661

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Miniature Glass Passivated Fast Recovery

Surface Mount Bridge Rectifier

FEATURES

• UL recognition, file number E54214

• Saves space on printed circuit boards

• Ideal for automated placement

• High surge current capability

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for power supply, lighting ballaster, battery charger, home

appliances, office equipment, and telecommunication

applications.

MECHANICAL DATA

Case: TO-269AA (MBS)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

Notes

(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad

PRIMARY CHARACTERISTICS

Package TO-269AA (MBS)

IF(AV) 0.5 A

VRRM 200 V, 400 V, 600 V

IFSM 35 A

IR5 μA

VF at IF = 0.4 A 1.0 V

TJ max. 150 °C

Diode variations Quad

TO-269AA (MBS)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MB2S MB4S MB6S UNIT

Device marking code 2 4 6

Maximum repetitive peak reverse voltage VRRM 200 400 600 V

Maximum RMS voltage VRMS 140 280 420 V

Maximum DC blocking voltage VDC 200 400 600 V

Maximum average forward output

rectified current (fig. 1)

on glass-epoxy PCB (1)

IF(AV) 0.5 A

on aluminum substrate (2) 0.8

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load IFSM 35 A

Rating for fusing (t < 8.3 ms) I2t5.0A

Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C

MB2S, MB4S, MB6S

www.vishay.com Vishay General Semiconductor

Revision: 19-Aug-13 2Document Number: 88661

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

(2) On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad



RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL MB2S MB4S MB6S UNIT

Maximum instantaneous forward

voltage per diode IF = 0.4 A VF 1.0 V

Maximum DC reverse current at rated DC blocking

voltage per diode

TA = 25 °C IR 5.0 μA

TA = 125 °C 100

Typical junction capacitance per diode 4.0 V, 1 MHz CJ 13 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL MB2S MB4S MB6S UNIT

Typical thermal resistance

RJA (1) 85

°C/W RJA (2) 70

RJL (1) 20

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

MB2S-E3/45 0.22 45 100 Tube

MB2S-E3/80 0.22 80 3000 13" diameter paper tape and reel

020 40 60 80 100 120 140 160

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Aluminum Substrate

Glass

Epoxy

PCB

Resistive or Inductive Load

Average Forward Rectified Current (A)

Ambient Temperature (°C)

110 100

f = 50 Hz f = 60 Hz

= 40 °C

Single Half Sine-Wave

Number of Cycles

Peak Forward Surge Current (A)

1.0 Cycle

MB2S, MB4S, MB6S

www.vishay.com Vishay General Semiconductor

Revision: 19-Aug-13 3Document Number: 88661

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Forward Voltage Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.3 0.5 0.7 0.9 1.1 1.3 1.5

0.01

0.1

TJ = 150 °C

TJ = 25 °C

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

020 40 60 80 100

0.01

0.1

100

= 125 °C

= 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

0.1 110 100

1000

Reverse Voltage (V)

Junction Capacitance (pF)

= 25 °C

f = 1.0 MHz

sig

= 50 mVp-p

0.029 (0.74)

0.017 (0.43)

0 to 8°

0.049 (1.24)

0.039 (0.99)

0.062 (1.57)

0.058 (1.47)

0.016 (0.41)

0.006 (0.15)

0.018 (0.46)

0.014 (0.36)

0.008 (0.20)

0.004 (0.10)

0.114 (2.90)

0.110 (2.80)

0.058 (1.47)

0.054 (1.37)

0.252 (6.40)

0.272 (6.90)

0.106 (2.70)

0.090 (2.30)

0.0075 (0.19)

0.0065 (0.16)

0.105 (2.67)

0.095 (2.41)

0.195 (4.95)

0.179 (4.55)

0.144 (3.65)

0.161 (4.10)

0.205 (5.21)

0.195 (4.95)

0.114 (2.90)

0.094 (2.40) 0.038 (0.96)

0.019 (0.48)

0.272 MAX.

(6.91 MAX.)

0.030 MIN.

(0.76 MIN.)

0.023 MIN.

(0.58 MIN.)

0.105 (2.67)

0.095 (2.41)

TO-269AA (MBS)

Mounting Pad Layout

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Revision: 08-Feb-17 1Document Number: 91000

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