IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) * Halogen-free According to IEC 61249-2-21 Definition * Low Gate Charge Qg Results in Simple Drive Requirement * Improved Gate, Avalanche and Dynamic dV/dt Ruggedness * Fully Characterized Capacitance and Avalanche Voltage and Current * Effective Coss Specified * Compliant to RoHS Directive 2002/95/EC 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration Single D DPAK (TO-252) IPAK (TO-251) APPLICATIONS D D * Switch Mode Power Supply (SMPS) * Uninterruptible Power Supply * High Speed Power Switching G G S G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFR420A-GE3 SiHFR420ATR-GE3a SiHFR420ATRL-GE3 SiHFU420A-GE3 IRFR420APbF IRFR420ATRPbFa IRFR420ATRLPbF IRFU420APbF SiHFR420A-E3 SiHFR420AT-E3a SiHFR420ATL-E3 SiHFU420A-E3 IRFR420A - - IRFU420A SiHFR420A - - SiHFU420A Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS 30 Continuous Drain Current VGS at 10 V TC = 25 C TC = 100 C Pulsed Drain Currenta ID IDM Linear Derating Factor UNIT V 3.3 2.1 A 10 0.67 W/C Single Pulse Avalanche Energyb EAS 140 mJ Repetitive Avalanche Currenta IAR 2.5 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s PD 83 W dV/dt 3.4 V/ns TJ, Tstg - 55 to + 150 300d C Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). Starting TJ = 25 C, L = 45 mH, Rg = 25 , IAS = 2.5 A (see fig. 12). ISD 2.5 A, dI/dt 270 A/s, VDD VDS, TJ 150 C. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91274 S10-1135-Rev. B, 10-May-10 www.vishay.com 1 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.5 UNIT C/W SPECIFICATIONS TJ = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 A 500 - - V VDS/TJ Reference to 25 C, ID = 1 mA - 0.60 - V/C VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.5 V Gate-Source Leakage IGSS VGS = 30 V - - 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 1.5 Ab VGS = 10 V VDS = 50 V, ID = 1.5 A A - - 3.0 1.4 - - S - 340 - - 53 - - 2.7 - - 490 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Effective Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VDS = 1.0 V, f = 1.0 MHz VGS = 0 V Coss eff. Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V VDS = 400 V, f = 1.0 MHz - 15 - VDS = 0 V to 400 Vc - 28 - - - 17 - - 4.3 ID = 2.5 A, VDS = 400 V, see fig. 6 and 13b Gate-Drain Charge Qgd - - 8.5 Turn-On Delay Time td(on) - 8.1 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = 250 V, ID = 2.5 A, Rg = 21 , RD = 97 , see fig. 10b tf pF pF nC - 12 - - 16 - - 13 - - - 3.3 - - 10 - - 1.6 - 330 500 ns - 760 1140 C ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 C, IS = 2.5 A, VGS = 0 Vb TJ = 25 C, IF = 2.5 A, dI/dt = 100 A/sb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 %to 80 % VDS. www.vishay.com 2 Document Number: 91274 S10-1135-Rev. B, 10-May-10 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 0.1 4.5V 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 100 TJ = 150 C 1 TJ = 25 C 0.1 0.01 4.0 Fig. 1 - Typical Output Characteristics I D , Drain-to-Source Current (A) 1 4.5V 20s PULSE WIDTH TJ = 150 C 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Document Number: 91274 S10-1135-Rev. B, 10-May-10 100 RDS(on) , Drain-to-Source On Resistance (Normalized) 3.0 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1 6.0 7.0 8.0 9.0 Fig. 3 - Typical Transfer Characteristics TOP 0.1 5.0 VGS , Gate-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 V DS = 50V 20s PULSE WIDTH ID = 2.5A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance(pF) 1000 Ciss 100 Coss 10 10 ISD , Reverse Drain Current (A) 10000 TJ = 150 C 1 TJ = 25 C Crss 0.1 0.4 1 1 10 100 1000 V GS = 0 V 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 100 ID = 2.5A VDS = 400V VDS = 250V VDS = 100V OPERATION IN THIS AREA LIMITED BY RDS(on) 15 I D , Drain Current (A) VGS , Gate-to-Source Voltage (V) 20 Fig. 7 - Typical Source-Drain Diode Forward Voltage 10 10 10us 100us 1 1ms 5 0 FOR TEST CIRCUIT SEE FIGURE 13 0 4 8 12 16 0.1 TC = 25 C TJ = 150 C Single Pulse 10 10ms 100 1000 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area www.vishay.com 4 10000 Document Number: 91274 S10-1135-Rev. B, 10-May-10 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix RD VDS 5.0 VGS D.U.T. Rg + - VDD 4.0 ID , Drain Current (A) 10 V Pulse width 1 s Duty factor 0.1 % 3.0 2.0 Fig. 10a - Switching Time Test Circuit 1.0 90 % VDS 0.0 25 50 75 100 125 150 10 % VGS ( C) TC , Case Temperature td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 t1 SINGLE PULSE (THERMAL RESPONSE) 0.02 0.01 t2 Notes: 1. Duty factor D = 2. Peak T 0.01 0.00001 0.0001 0.001 0.01 t1/ t 2 J = P DM x Z thJC +T C 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS tp 15 V L VDS D.U.T Rg IAS 20 V tp Driver + A - VDD IAS 0.01 Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91274 S10-1135-Rev. B, 10-May-10 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A 300 TOP 250 BOTTOM ID 1.1A 1.6A 2.5A 200 150 100 700 V DSav , Avalanche Voltage ( V ) EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 650 600 50 550 0.0 0 25 50 75 100 125 0.5 150 1.5 2.0 2.5 IAV , Avalanche Current ( A) Starting TJ , Junction Temperature ( C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 1.0 Fig. 12d - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. QG 50 k 12 V 10 V 0.2 F 0.3 F QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91274 S10-1135-Rev. B, 10-May-10 IRFR420A, IRFU420A, SiHFR420A, SiHFU420A Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer + - - Rg * * * * + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91274. Document Number: 91274 S10-1135-Rev. B, 10-May-10 www.vishay.com 7 Package Information Vishay Siliconix TO-252AA (HIGH VOLTAGE) E b3 E1 L3 D1 D H L4 b2 b A c2 e A1 L1 L c L2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. E 6.40 6.73 0.252 0.265 L 1.40 1.77 0.055 L1 2.743 REF L2 0.070 0.108 REF 0.508 BSC 0.020 BSC L3 0.89 1.27 0.035 0.050 L4 0.64 1.01 0.025 0.040 D 6.00 6.22 0.236 0.245 H 9.40 10.40 0.370 0.409 b 0.64 0.88 0.025 0.035 b2 0.77 1.14 0.030 0.045 b3 5.21 5.46 0.205 e 2.286 BSC 0.215 0.090 BSC A 2.20 2.38 0.087 A1 0.00 0.13 0.000 0.094 0.005 c 0.45 0.60 0.018 0.024 c2 0.45 0.58 0.018 0.023 D1 5.30 - 0.209 - E1 4.40 - 0.173 - 0' 10' 0' 10' ECN: S-81965-Rev. A, 15-Sep-08 DWG: 5973 Notes 1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 3. The package top may be smaller than the package bottom. 4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. Document Number: 91344 Revision: 15-Sep-08 www.vishay.com 1 Package Information Vishay Siliconix TO-251AA (HIGH VOLTAGE) 4 3 E1 E Thermal PAD 4 b4 2 4 A 0.010 0.25 M C A B L2 4 c2 A 1 B D D1 A C 3 Seating plane 5 C L1 L3 (Datum A) C L B B A A1 3 x b2 View A - A 2xe c 3xb 0.010 0.25 M C A B Plating 5 b1, b3 Base metal Lead tip c1 (c) 5 (b, b2) Section B - B and C - C MILLIMETERS DIM. MIN. MAX. INCHES MIN. MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 2.18 2.39 0.086 0.094 D1 5.21 - 0.205 - A1 0.89 1.14 0.035 0.045 E 6.35 6.73 0.250 0.265 4.32 - 0.170 - b 0.64 0.89 0.025 0.035 E1 b1 0.65 0.79 0.026 0.031 e b2 0.76 1.14 0.030 0.045 L 8.89 9.65 0.350 0.380 b3 0.76 1.04 0.030 0.041 L1 1.91 2.29 0.075 0.090 b4 4.95 5.46 0.195 0.215 L2 0.89 1.27 0.035 0.050 2.29 BSC 2.29 BSC c 0.46 0.61 0.018 0.024 L3 1.14 1.52 0.045 0.060 c1 0.41 0.56 0.016 0.022 1 0' 15' 0' 15' c2 0.46 0.86 0.018 0.034 2 25' 35' 25' 35' D 5.97 6.22 0.235 0.245 ECN: S-82111-Rev. A, 15-Sep-08 DWG: 5968 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimension are shown in inches and millimeters. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and D1. 5. Lead dimension uncontrolled in L3. 6. Dimension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEDEC outline TO-251AA. Document Number: 91362 Revision: 15-Sep-08 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000