ABB Semiconductors AG reserves the right to change specifications without notice.
VCE = 1200 V
IC=75A
Doc. No. 5SYA 15 10 -00 Ma y. 01
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Low-loss, rugged IGBT chip-set
•
EMC friendly diode with positive
temp. coefficient of on-state
•
Low profile compact baseless
package
•
Industry standard package
•
UL File no. E63532
Maximum Rated Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Collector- Em itter Voltage VCES VGE shorted 1200 V
DC Collector Current ICThs = 60°C 75 A
Peak Collector Current ICM Pulse: tp=1ms, Ths = 60°C 150 A
Gate Emitter Voltage VGES ±20 V
Total Power Dissipation Ptot Ths = 25°C per switch 340 W
IGBT Switching SOA SwSOA IC = 150 A, VCEM = 1200 V, VCC = 1000 V,
VGE = ±15 V, Tvj =125°C
voltages measured on auxiliary terminals
IGBT Short Circuit SOA SCSOA VCC = 900 V , VCEM = 1200 V, tp = 10 µs,
VGE = ±15 V, Tvj =125 °C
DC Forward Current IF75 A
Peak Forward Current IFM Pulse: tp = 1ms, Ths = 60°C 150 A
IGBT Module LoPak3 NPT
5SNS 0075W120000
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 15 10 -00 Ma y. 01 2 of 8
Maximum Rated Values (cont.) (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions Values Unit
Junction Temperature Tvj - 40 ~ 150 °C
Storage Temperature Ttstg/Tcop - 40 ~ 125 °C
Isolation Volt ag e Viso 1 m i n , f = 50 H z 2500 V
Base to Heatsink (M5) Hole 5.5mm diameter 3 ~ 6 Nm
Main Terminals Pin: 1.15*1.0 mm
PCB mounting Pitch of pins : 3.81 mm
Mounting
Gate, Emitter Aux. Pin: 1.15*1.0 mm
IGBT Characteristic Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tvj = 25 °C 2.45 3.00 V
Collector-Emitter
Saturation Voltag e VCE(sat) IC = 75 A, VGE = 15 V Tvj = 125 °C 2.95 V
Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 V, Tvj = 125 °C 6 mA
Gate-Emitter leak age
Current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C ±500 nA
Gate-Emitter Threshold
Voltage VGE(TO) IC = 3 mA, V CE = VGE 4.5 6.5 V
Total Gate Charge Qge IC = 75 A, VCE = 600 V, VGE = -15 to 15 V 800 nC
Input Capacitance Cies 6nF
Output Capacitance Coes 0.5 nF
Reverse Transfer
Capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1MHz
0.4 nF
Turn -On Delay Time td(on) 0.09 µs
Rise Time tr
IC = 75 A, VCC = 600 V, Rgon = 15 Ω,
Tvj = 125 °C, VGE = ±15 V 0.07 µs
Turn -Off Dela y Time td(off) 0.48 µs
Fall Time tf
IC = 75 A, VCC = 600 V, Rgoff = 15 Ω,
Tvj = 125 °C,VGE = ±15 V 0.06 µs
Turn-o n Switching Energy Eon Rgon = 15 Ω9.0 mJ
Turn-off Switching Energ y Eoff Rgoff = 15 Ω
IC = 75 A, Tvj = 125 °C,
VCC = 600 V, VGE = ±15 V,
inductive load, integrated up
to: 3% VCE (Eon), 1% IC (Eoff)8.0 mJ
Module stray Inductance
Plus to Minus Ls DC 25 nH
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 15 10 -00 Ma y. 01 3 of 8
Diode Characteristic Values (Tvj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
Tvj = 25 °C 2.00 2.45
Forward Voltage VFIF = 75 A Tvj = 125 °C 2.00 V
Reverse Recovery Current Irrm 60 A
Reverse Recovery Charge Qrr 13 µC
Reverse Recovery Time trr
IF = 75 A, Rgon = 15 Ω, VCC = 600 V,
VGE = ±15 V, Tvj = 125 °C 0.4 µs
Reverse Recovery Energy Erec
IF = 75 A, Tvj = 125 °C, VCC = 600 V,
Rgon = 15 Ω, VGE = ±15 V,
inductive load, fully integrated 5.0 mJ
Thermal Characteristics (Tj = 25°C, unless specified otherwise)
Parameter Symbol Conditions min. typ. max. Unit
IGBT Thermal Resistance
Junction to Heatsink Rth j-h
Igbt 0.370 °C/W
Diode Thermal Resistance
Junc tion to Heat sink Rth j-h
Diode 0.740 °C/W
Equivalent IGBT Thermal
Resistance Junct. to Case Rth j-c
Igbt 0.235 °C/W
Equivalent Diode Thermal
Resistance Junct. to Cas
e
Rth j-c
Diode
Heatsink:
flatness < +/- 20 µm,
roughness < 6 µ m without rid ge
Thermal grease:
thickness: 30 µm < t < 50 µm 0.550 °C/W
Mechanical Properties
Parameter Symbol Conditions min. typ. max. Unit
Dimensions L* W* H Typical , see outline drawing 121.5 * 61.5 * 20.5 mm
Term. to base: 8.5 mm
Clearance Distance DCacc. IEC 664-1 and
prEN50124-1:1995 Term. to te rm: 9.5 mm
Term. to base: 12.5 mm
Surface Creepage
Distance DSC acc. IEC 664-1 and
prEN50124-1:1995 Term. to term: 15.5 mm
Weight 215 gr
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 15 10 -00 Ma y. 01 4 of 8
Electri cal confi guration
Outline drawing
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 15 10 -00 Ma y. 01 5 of 8
Fig. 1 Typ. Output Characteristics at Tvj=25°C Fig. 2 Typ. Out put Characterist ics at Tvj=125°C
Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristics
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 15 10 -00 Ma y. 01 6 of 8
Fig. 5 Typ. Switching Energies per pulse vs
on-state current Fig. 6 Typ. Switching Energies per pulse vs
gate resistor
Fig. 7 Typ. S wi tching times vs on -state
current Fig. 8 Typ. Switching times vs gate resistor
5SNS 0075W120000
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA 15 10 -00 Ma y. 01 7 of 8
Fig. 9 Typ. IGBT Capacitances vs collector-
emitter Voltage Fig. 10 Typ. Diode forward Characteristics
Fig. 11 Typ. Reverse Recovery
Characteristics vs forward current Fi g. 12 Typ. Reverse Recovery Characteristics
vs gate resistor
5SNS 0075W120000
Fig. 13 Typ. Thermal impedance vs time
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telepho ne +41 (0)62 888 64 19
Fax +41 (0)62 888 6306
Email Info@ch.abb.com
Internet www.abbsem.com
Doc. No. 5SYA 15 10 -00 Ma y. 01
