5SNS 0075W120000 - ABB Semiconductors

ABB Semiconductors AG reserves the right to change specifications without notice.

VCE = 1200 V

IC=75A

Doc. No. 5SYA 15 10 -00 Ma y. 01

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Low-loss, rugged IGBT chip-set

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EMC friendly diode with positive

temp. coefficient of on-state

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Low profile compact baseless

package

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Industry standard package

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UL File no. E63532

Maximum Rated Values (Tvj = 25°C, unless specified otherwise)

Parameter Symbol Conditions Values Unit

Collector- Em itter Voltage VCES VGE shorted 1200 V

DC Collector Current ICThs = 60°C 75 A

Peak Collector Current ICM Pulse: tp=1ms, Ths = 60°C 150 A

Gate Emitter Voltage VGES ±20 V

Total Power Dissipation Ptot Ths = 25°C per switch 340 W

IGBT Switching SOA SwSOA IC = 150 A, VCEM = 1200 V, VCC = 1000 V,

VGE = ±15 V, Tvj =125°C

voltages measured on auxiliary terminals

IGBT Short Circuit SOA SCSOA VCC = 900 V , VCEM = 1200 V, tp = 10 µs,

VGE = ±15 V, Tvj =125 °C

DC Forward Current IF75 A

Peak Forward Current IFM Pulse: tp = 1ms, Ths = 60°C 150 A

IGBT Module LoPak3 NPT

5SNS 0075W120000

ABB Semiconductors AG reserves the right to change specifications without notice.

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Maximum Rated Values (cont.) (Tvj = 25°C, unless specified otherwise)

Parameter Symbol Conditions Values Unit

Junction Temperature Tvj - 40 ~ 150 °C

Storage Temperature Ttstg/Tcop - 40 ~ 125 °C

Isolation Volt ag e Viso 1 m i n , f = 50 H z 2500 V

Base to Heatsink (M5) Hole 5.5mm diameter 3 ~ 6 Nm

Main Terminals Pin: 1.15*1.0 mm

PCB mounting Pitch of pins : 3.81 mm

Mounting

Gate, Emitter Aux. Pin: 1.15*1.0 mm

IGBT Characteristic Values (Tvj = 25°C, unless specified otherwise)

Parameter Symbol Conditions min. typ. max. Unit

Tvj = 25 °C 2.45 3.00 V

Collector-Emitter

Saturation Voltag e VCE(sat) IC = 75 A, VGE = 15 V Tvj = 125 °C 2.95 V

Collector Cut-off Current ICES VCE = 1200 V, VGE = 0 V, Tvj = 125 °C 6 mA

Gate-Emitter leak age

Current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C ±500 nA

Gate-Emitter Threshold

Voltage VGE(TO) IC = 3 mA, V CE = VGE 4.5 6.5 V

Total Gate Charge Qge IC = 75 A, VCE = 600 V, VGE = -15 to 15 V 800 nC

Input Capacitance Cies 6nF

Output Capacitance Coes 0.5 nF

Reverse Transfer

Capacitance Cres

VCE = 25 V, VGE = 0 V, f = 1MHz

0.4 nF

Turn -On Delay Time td(on) 0.09 µs

Rise Time tr

IC = 75 A, VCC = 600 V, Rgon = 15 Ω,

Tvj = 125 °C, VGE = ±15 V 0.07 µs

Turn -Off Dela y Time td(off) 0.48 µs

Fall Time tf

IC = 75 A, VCC = 600 V, Rgoff = 15 Ω,

Tvj = 125 °C,VGE = ±15 V 0.06 µs

Turn-o n Switching Energy Eon Rgon = 15 Ω9.0 mJ

Turn-off Switching Energ y Eoff Rgoff = 15 Ω

IC = 75 A, Tvj = 125 °C,

VCC = 600 V, VGE = ±15 V,

inductive load, integrated up

to: 3% VCE (Eon), 1% IC (Eoff)8.0 mJ

Module stray Inductance

Plus to Minus Ls DC 25 nH

5SNS 0075W120000

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 15 10 -00 Ma y. 01 3 of 8

Diode Characteristic Values (Tvj = 25°C, unless specified otherwise)

Parameter Symbol Conditions min. typ. max. Unit

Tvj = 25 °C 2.00 2.45

Forward Voltage VFIF = 75 A Tvj = 125 °C 2.00 V

Reverse Recovery Current Irrm 60 A

Reverse Recovery Charge Qrr 13 µC

Reverse Recovery Time trr

IF = 75 A, Rgon = 15 Ω, VCC = 600 V,

VGE = ±15 V, Tvj = 125 °C 0.4 µs

Reverse Recovery Energy Erec

IF = 75 A, Tvj = 125 °C, VCC = 600 V,

Rgon = 15 Ω, VGE = ±15 V,

inductive load, fully integrated 5.0 mJ

Thermal Characteristics (Tj = 25°C, unless specified otherwise)

Parameter Symbol Conditions min. typ. max. Unit

IGBT Thermal Resistance

Junction to Heatsink Rth j-h

Igbt 0.370 °C/W

Diode Thermal Resistance

Junc tion to Heat sink Rth j-h

Diode 0.740 °C/W

Equivalent IGBT Thermal

Resistance Junct. to Case Rth j-c

Igbt 0.235 °C/W

Equivalent Diode Thermal

Resistance Junct. to Cas

Rth j-c

Diode

Heatsink:

flatness < +/- 20 µm,

roughness < 6 µ m without rid ge

Thermal grease:

thickness: 30 µm < t < 50 µm 0.550 °C/W

Mechanical Properties

Parameter Symbol Conditions min. typ. max. Unit

Dimensions L* W* H Typical , see outline drawing 121.5 * 61.5 * 20.5 mm

Term. to base: 8.5 mm

Clearance Distance DCacc. IEC 664-1 and

prEN50124-1:1995 Term. to te rm: 9.5 mm

Term. to base: 12.5 mm

Surface Creepage

Distance DSC acc. IEC 664-1 and

prEN50124-1:1995 Term. to term: 15.5 mm

Weight 215 gr

5SNS 0075W120000

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 15 10 -00 Ma y. 01 4 of 8

Electri cal confi guration

Outline drawing

5SNS 0075W120000

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 15 10 -00 Ma y. 01 5 of 8

Fig. 1 Typ. Output Characteristics at Tvj=25°C Fig. 2 Typ. Out put Characterist ics at Tvj=125°C

Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Gate charge Characteristics

5SNS 0075W120000

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 15 10 -00 Ma y. 01 6 of 8

Fig. 5 Typ. Switching Energies per pulse vs

on-state current Fig. 6 Typ. Switching Energies per pulse vs

gate resistor

Fig. 7 Typ. S wi tching times vs on -state

current Fig. 8 Typ. Switching times vs gate resistor

5SNS 0075W120000

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 15 10 -00 Ma y. 01 7 of 8

Fig. 9 Typ. IGBT Capacitances vs collector-

emitter Voltage Fig. 10 Typ. Diode forward Characteristics

Fig. 11 Typ. Reverse Recovery

Characteristics vs forward current Fi g. 12 Typ. Reverse Recovery Characteristics

vs gate resistor

5SNS 0075W120000

Fig. 13 Typ. Thermal impedance vs time

ABB Semiconductors reserves the right to change specifications without notice.

ABB Semiconductors AG

Fabrikstrasse 3

CH-5600 Lenzburg, Switzerland

Telepho ne +41 (0)62 888 64 19

Fax +41 (0)62 888 6306

Email Info@ch.abb.com

Internet www.abbsem.com

Doc. No. 5SYA 15 10 -00 Ma y. 01