2SA1479 / 2SC3789 Ordering number : EN2093A SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1479 / 2SC3789 High-Definition CRT Display Video Output Applications Applications * * High-definition CRT display. Color TV chroma output, high breakdown voltage drivers. Features * * * * * * High breakdown voltage : VCEO300V. Excellent high frequency characteristic : Cre=1.8pF (typ). Adoption of MBIT process. No insulator required for mounting, which contributes to reducing the cost and the number of manufacturing processes. Plastic-covered heat sink facilitating high-density mounting. Directly interchange able with TO-126 because the package is designed based on the conventional package dimensions. Specifications ( ) : 2SA1479 Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit VCBO VCEO (--)300 (--)300 V (--)5 V Collector Current VEBO IC (--)100 mA Collector Current (Pulse) ICP (--)200 mA 1.5 W Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25C V 7 W 150 C --55 to +150 C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 10709CB MS IM TC-00001817 / O3103TN (KT)/71598HA (KT)/4087TA, TS No.2093-1/5 2SA1479 / 2SC3789 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain Gain-Bandwidth Product hFE fT Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Output Capacitance Cob Reverse Transfer Capacitance Cre Ratings Conditions min typ VCB=(--)200V, IE=0A VEB=(--)4V, IC=0A VCE=(--)10V, IC=(--)10mA VCE=(--)30V, IC=(--)10mA IC=(--)20mA, IB=(--)2mA 40* (--)0.1 A (--)0.1 A 320* 70 MHz (--)0.6 IC=(--)20mA, IB=(--)2mA IC=(--)10A, IE=0A (--)1.0 IC=(--)1mA, RBE= IE=(--)10A, IC=0A V V (--)300 V (--)300 V (--)5 VCB=(--)30V, f=1MHz VCB=(--)30V, f=1MHz * : The 2SA1479 / 2SC3789 are classified by 10mA hFE as follws: Rank C D E hFE 40 to 80 60 to 120 100 to 200 Unit max V (3.1)2.6 pF (2.3)1.8 pF F 160 to 320 Package Dimensions unit : mm (typ) 7516A-002 8.0 4.0 3.6 3.3 1.0 11.0 1.5 7.5 3.0 1.4 1.0 3.0 1.6 0.8 0.8 0.75 15.5 0.7 2 3 1 : Emitter 2 : Collector 3 : Base 1.7 1 2.4 4.8 --8 SANYO : TO-126ML IC -- VCE --5 --40A --30A --4 --3 --2 --20A --10A --1 0 0 2SC3789 7 Collector Current, IC -- mA Collector Current, IC -- mA --7 --6 IC -- VCE 8 2SA1479 40A 6 5 30A 4 20A 3 2 10A 1 IB=0A --2 --4 --6 --8 Collector-to-Emitter Voltage, VCE -- V --10 ITR03763 IB=0A 0 0 2 4 6 8 10 Collector-to-Emitter Voltage, VCE -- V ITR03764 No.2093-2/5 2SA1479 / 2SC3789 IC -- VCE --8 --40A --6 --30A --5 --4 --20A --3 --2 --10A --1 0 30A 5 4 20A 3 2 10A IB=0A 0 40 80 120 160 200 Collector-to-Emitter Voltage, VCE -- V ITR03766 ITR03765 IC -- VBE 120 2SA1479 VCE=--5V --100 2SC3789 VCE=5V --40 --20 --25C 80 25C Ta=75 C Collector Current, IC -- mA --60 --25C --80 25C 100 Ta=75 C Collector Current, IC -- mA 6 0 --200 IC -- VBE --120 60 40 20 0 --0.2 --0.4 --0.6 --0.8 Base-to-Emitter Voltage, VBE -- V 0 0 --1.0 0 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 ITR03768 hFE -- IC 1000 2SA1479 VCE=--10V 7 0.2 ITR03767 hFE -- IC 1000 2SC3789 VCE=10V 7 5 5 3 DC Current Gain, hFE DC Current Gain, hFE 40A 1 IB=0A --40 --80 --120 --160 Collector-to-Emitter Voltage, VCE -- V 0 Ta=75C 25C 2 --25C 100 7 5 3 5 2 5 2 5 3 --10 Collector Current, IC -- mA 3 7 7 --100 10 1.0 2 2 3 5 7 10 Gain-Bandwidth Product, f T -- MHz 100 7 5 3 2 10 7 5 3 5 7 2 100 ITR03770 f T -- IC 2 2SA1479 VCE=--30V 2 Collector Current, IC -- mA ITR03769 f T -- IC 2 --25C 7 3 2 25C 100 2 --1.0 Ta=75C 2 3 10 Gain-Bandwidth Product, f T -- MHz 2SC3789 7 Collector Current, IC -- mA Collector Current, IC -- mA --7 IC -- VCE 8 2SA1479 2SC3789 VCE=30V 100 7 5 3 2 10 7 5 5 7 --1.0 2 3 5 7 2 3 5 --10 Collector Current, IC -- mA 7 --100 2 ITR03771 5 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR03772 No.2093-3/5 2SA1479 / 2SC3789 Cob -- VCB 2 Cob -- VCB 2 2SC3789 f=1MHz Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 2SA1479 f=1MHz 10 7 5 3 2 1.0 7 3 5 2 1.0 7 1.0 Cre -- VCB 10 7 5 3 2 1.0 7 5 2 3 5 3 5 7 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 100 ITR03774 10 7 5 3 2 1.0 7 2 3 5 7 2 10 3 5 7 2 100 ITR03776 VCE(sat) -- IC 2SC3789 IC / IB=10 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 2 10 2SC3789 f=1MHz 10 2SA1479 IC / IB=10 7 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 7 5 Cre -- VCB 5 1.0 7 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03775 --10 3 2 2SA1479 f=1MHz --1.0 2 Collector-to-Base Voltage, VCB -- V Reverse Transfer Capacitance, Cre -- pF Reverse Transfer Capacitance, Cre -- pF 3 2 3 5 7 --100 2 --10 Collector-to-Base Voltage, VCB -- V ITR03773 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 5 2 --1.0 5 3 2 1.0 7 5 3 2 0.1 7 5 5 7 --1.0 2 3 5 2 3 5 --10 Collector Current, IC -- mA 7 7 --100 3 5 7 2 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 2SC3789 IC / IB=10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 5 3 2 --1.0 7 5 7 100 2 ITR03778 VBE(sat) -- IC 10 2SA1479 IC / IB=10 7 1.0 ITR03777 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 7 5 5 3 2 1.0 7 5 3 3 2 10 5 7 --1.0 2 3 5 7 2 3 5 --10 Collector Current, IC -- mA 7 --100 2 ITR03779 2 5 7 1.0 2 3 5 7 10 2 3 Collector Current, IC -- mA 5 7 100 2 ITR03780 No.2093-4/5 2SA1479 / 2SC3789 ASO 3 m DC 7 DC 5 era tio n( Ta = 2 op er (T ation c= 25 C ) op 3 s 25 C ) 10 2SA1479 / 2SC3789 7 Collector Dissipation, PC -- W Collector Current, IC -- mA 10 IC=100mA 100 s 0 50 s 1m 2 PC -- Ta 8 2SA1479 / 2SC3789 ICP=200mA 7 5 6 5 Id ea lr 4 2 (For PNP, minus sign is omitted.) 5 7 10 2 3 5 7 100 2 3 5 Collector-to-Emitter Voltage, VCE -- V ITR03782 iat io 3 n 2 No hea t 1 3 ad 0 0 20 40 60 sink 80 100 120 140 Ambient Temperature, Ta -- C 160 ITR03781 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January , 2009. Specifications and information herein are subject to change without notice. PS No.2093-5/5