3
パワーMOSFET/PowerMOSFETs
■パワーMOSFET PowerMOSFET
F-II /FAP-IIシリーズ F-II/FAP-II series
高速スイッチング／アバランシェ耐量保証 Highspeedswitching/Avalancherated
形   式 VDSS IDID (pulse) RDS (on) PD＊2VGSS VGS (th) パッケージ 質  量
Device type Max. ＊1Typ. Package Net mass
Volts Amps. Amps. Ohms (Ω) Watts Volts Volts Grams
200 10 40 0.4 40 ±30 3.5 TO-220AB 2.0
200 10 40 0.4 30 ±30 3.5 TO-220F 2.0
200 18 72 0.18 50 ±30 3.5 TO-220AB 2.0
200 18 72 0.18 40 ±30 3.5 TO-220F 2.0
200 18 72 0.18 50 ±30 3.5 T-pack 1.6
300 5 20 1.0 30 ±30 4.0 TO-220F 2.0
300 10 40 0.53 40 ±30 4.0 TO-220F 2.0
300 10 40 0.53 80 ±30 4.0 TO-3P 5.5
300 20 80 0.2 125 ±30 4.0 TO-3P 5.5
450 5 14 1.6 40 ±30 3.5 TO-220F 2.0
450 5 14 1.6 60 ±30 3.5 TO-220AB 2.0
450 9 36 1.0 50 ±30 3.5 TO-220AB 2.0
450 9 36 1.0 40 ±30 3.5 TO-220F 2.0
450 9 36 1.0 80 ±30 3.5 TO-3P 5.5
2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2849-01L, S
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK1007-01
2SK2523-01
2SK2524-01MR
2SK2525-01
記号 Let t er sym bol s
VDSS:ドレイン・ソース電圧 Drain-source voltage
ID:ドレイン電流 Continuous drain current
ID(pulse):パルスドレイン電流 Pulsed drain current
RDS(on):ドレイン・ソース オン抵抗 Drain-source on-state resistance
PD:許容損失電力 Maximum power dissipation
VGSS:ゲート・ソース電圧 Gate-source peak voltage
VGS(th):ゲートしきい値電圧 Gate threshold voltage
＊1RDS (on): VGS=10V, ＊2PD: TC=25°C
500 4.5 12 2.2 60 ±30 3.5 TO-220AB 2.0
500 12 36 0.74 125 ±30 3.5 TO-3P 5.5
700 5 20 1.85 60 ±30 3.5 TO-220AB 2.0
700 5 20 1.85 50 ±30 3.5 TO-220F 2.0
800 2.5 7 7.0 40 ±30 3.5 TO-220F 2.0
800 2.5 7 7.0 45 ±30 3.5 TO-220AB 2.0
800 4 10 4.5 60 ±30 3.5 T-pack 1.6
800 5 20 2.3 50 ±30 3.5 TO-220F 2.0
900 5 20 3.6 60 ±30 3.5 TO-220AB 2.0
900 5 20 3.6 40 ±30 3.5 TO-220F 2.0
900 5 20 3.6 80 ±30 3.5 TO-3P 5.5
2SK1008-01
2SK1014-01
2SK2695-01
2SK2696-01MR
2SK951-MR
2SK952
2SK1552-01L, S
2SK2397-01MR
2SK2526-01
2SK2527-01MR
2SK2528-01