APT2x101DQ60J 600V 100A
APT2x100DQ60J 600V 100A
053-4208 Rev H 2-2011
Anti-Parallel Parallel
2
1
323
414
APT2x100DQ60J APT2x101DQ60J
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifi ers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
IRM
CT
UNIT
Volts
µA
pF
MIN TYP MAX
1.6 2.2
2.05
1.28
25
500
190
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 100A
IF = 200A
IF = 100A, TJ = 125°C
VR = 600V
VR = 600V, TJ = 125°C
DUAL DIE ISOTOP® PACKAGE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 82°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Symbol
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
EAVL
TJ,TSTG
UNIT
Volts
Amps
mJ
°C
APT2x101_100DQ60J
600
100
146
1000
20
-55 to 175
SOT-227
ISOTOP
®
1
23
4
file # E145592
"UL Recognized"
Microsemi Website - http://www.microsemi.com
APT2x101_100DQ60J
DYNAMIC CHARACTERISTICS
053-4208 Rev H 2-2011
MIN TYP MAX
- 34
- 160
- 290
- 5 -
- 220
- 1530
- 13 -
- 100
- 2890
- 44
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 100A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
IF = 100A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 100A, diF/dt = -1000A/µs
VR = 400V, TC = 125°C
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
RθJC
VIsolation
WT
Torque
MIN TYP MAX
.42
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
10
-5
10
-4
10
-3
10
-2
0.1 1
ZθJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
Peak T
J
= P
DM
x Z
θJC
+
TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
053-4208 Rev H 2-2011
APT2x101_100DQ60J
TYPICAL PERFORMANCE CURVES
0
0.2
0.4
0.5
0.6
1
1.2
1.4
0 25 50 75 100 125 150
TJ=125°C
VR=400V
50A
100A
200A
Duty cycle = 0.5
TJ=175°C
1 10 100 200
T
J, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
Q
rr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
I
RRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
V
F, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/µs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/µs) -diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ = 175°C
TJ=125°C
VR=400V
100A
50A
200A
300
250
200
150
100
50
0
4000
3500
3000
2500
2000
1500
1000
500
0
TJ=125°C
VR=400V 200A
100A
50A
300
250
200
150
100
50
0
60
50
40
30
20
10
0
C
J, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/µs)
I
F(AV) (A)
Qrr
trr
Qrr
IRRM
1400
1200
1000
800
600
400
200
0
trr
0
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150 175
APT2x101_100DQ60J
053-4208 Rev H 2-2011
APT60M75L2LL
4
3
1
2
5
5
Zero
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjust
30μH
D.U.T.
+18V
0V
Vr
trr/Qrr
Waveform
Anode 1
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Anode 2
Anti-parallel Parallel
Cathode 1
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Cathode 2
Anode 1
Cathode 2 Anode 2
Cathode 1
SOT-227 (ISOTOP®) Package Outline
APT2x100DQ60J APT2x101DQ60J
