VUO110-16NO7 3~ Rectifier Standard Rectifier Module VRRM = 1600 V I DAV = 125 A I FSM = 1200 A 3~ Rectifier Bridge Part number VUO110-16NO7 B- C~ D~ E~ A+ Features / Advantages: Applications: Package: PWS-E Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130410b VUO110-16NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 150C 2 mA TVJ = 25C 1.13 V 1.46 V 1.04 V VF IF = forward voltage drop min. 50 A typ. I F = 150 A IF = TVJ = 125 C 50 A I F = 150 A TC = 110C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 125 A TVJ = 150 C 0.79 V d= for power loss calculation only Ptot 1.47 T VJ = 150 C 4.5 m 0.7 K/W 0.3 K/W TC = 25C 175 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.20 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.30 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 1.02 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.10 kA t = 10 ms; (50 Hz), sine TVJ = 45C 7.20 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 6.98 kAs TVJ = 150 C 5.20 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 5.04 kAs 37 pF 20130410b VUO110-16NO7 Package Ratings PWS-E Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 200 Unit A -40 125 C -40 150 C Weight 284 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL typ. creepage distance on surface | striking distance through air t = 1 minute Made in Germany Product Number 4.25 5.75 4.25 5.75 Nm Nm terminal to terminal 12.0 mm terminal to backside 26.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VUO110-16NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO110-16NO7 * on die level Delivery Mode Box Code No. 462403 T VJ = 150 C Rectifier V 0 max threshold voltage 0.79 V R 0 max slope resistance * 3.3 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 5 Data according to IEC 60747and per semiconductor unless otherwise specified 20130410b VUO110-16NO7 Outlines PWS-E 3 30 7 M6x12 94 26 15 26 80 72 D ~ E ~ B - A + 3 4 2 5 1 6 12 6.5 54 27 6.5 C ~ 7 25 66 M6 B- IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved C~ D~ E~ A+ Data according to IEC 60747and per semiconductor unless otherwise specified 20130410b VUO110-16NO7 Rectifier 1000 200 104 50Hz, 80% VRRM 50 Hz 0.8 x V RRM 160 800 120 IFSM 80 [A] IF 2 TVJ = 150C T VJ = 150C 40 TVJ= 150C [A s] 600 [A] TVJ= 45C TVJ = 45C TVJ = 125C TVJ = 25C 0 0.5 1.0 400 0.001 1.5 103 0.01 0.1 2 1 1 3 2 Fig. 3 I t vs. time per diode Fig. 2 Surge overload current vs. time per diode Fig. 1 Forward current vs. voltage drop per diode 4 5 6 7 89 t [ms] t [s] VF [V] 160 RthA: 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 50 DC = 1 0.5 0.4 0.33 0.17 0.08 40 Ptot 30 [W] 120 DC = 1 0.5 0.4 0.33 0.17 0.08 IFAVM 80 [A] 20 40 10 0 0 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0 25 Tamb [C] IFAV [A] 50 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.8 0.6 ZthJC 0.4 [K/W] 0.2 0.0 1 10 100 1000 Ri 0.100 ti 0.020 0.010 0.010 0.162 0.225 0.258 0.800 0.170 0.580 10000 t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130410b