TOSHIBA = CNY 17-2,CNY17-3,CNY 17-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR CNY17-2, CNY17-3, CNY17-4 AC LINE/DIGITAL LOGIC ISOLATOR Unit in mm DIGITAL LOGIC /DIGITAL LOGIC ISOLATOR TELEPHONE LINE RECEIVER hid TWISTED PAIR LINE RECEIVER a HIGH FREQUENCY POWER SUPPLY FEEDBACK CONTROL < a} dt 16 RELAY CONTACT MONITOR 1 2 3 7.12 + 0.25 7.62 0.25 0.25 *hbs 7 05011 | [.2+0.15Z 2 7.85~8.80 al 2.54 + 0.25 3.65 79:38 The TOSHIBA Corporation CNY17 consist of a gallium arsenide infrared emitting diode coupled with a silicon photo transistor in a 0.8 + 0.25 dual in-line package. @ Small Package Size and Low Cost e 6Fast Switching Speeds : 5us(TYP.) 11-748 e High DC Current Transfer Ratio : CTR(Ip=10mA, Vop=5V) TOSHIBA 11-7A8 CNY17-2 : 68~125% Weight : 0.4 CNY17-3 : 100~200% CNY17-4 : 160~320% e High Isolation Resistance : 10"%0 (TYP.) e High Isolation Voltage : 4400V (MIN.) PIN CONFIGURATION if 6 ah ep 30 4 : ANODE : CATHODE : N.C. : EMITTER : COLLECTOR : BASE Aaoar WON 1 2001-06-01TOSHIBA CNY 17-2,CNY17-3,CNY 17-4 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING UNIT Forward Current Ip 60 mA Forward Current Derating Alp /C 0.8* |mA/C A Peak Forward Current (Note) IpF 3 A 4 | Power Dissipation Pp 100 mW Power Dissipation Derating APp/C 1.33* |mW/C Reverse Voltage VR 6 Vv 5 Collector-Emitter Voltage BVCEO 70 Vv 2 | Collector-Base Voltage BVcBO 70 Vv Zs Emitter-Collector Voltage BVECO 7 Vv E+ | Collector Current Ic 100 mA g Power Dissipation Po 150 mW a Power Dissipation Derating APC /C 2.0* |mW/C Storage Temperature Tstg 55~150 C a Operating Temperature Topr 55~100 C a : < aay Soldering Temperature Tsol 260 C 8 Total Package Dissipation Pr 200 mW Dissipation Derating app/C | 26% |mW/-c (Note) Pulse Width 1s, 300pps. * Above 25C ambient. 2 2001-06-01TOSHIBA CNY 17-2,CNY17-3,CNY 17-4 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT a Forward Voltage VF Ip=60mA {1.35 |1.65 Vv a Reverse Current IR VR=3V 10 | pA Capacitance Cp V=0, f=1MHz 30 pF DC F c orward Current bre VoE=5, Ig=500A 100 | 200 _ oe | Gain | Collector-Emitt &, | Collector-Emitter _ _ _ _ | Breakdown Voltage V (BR) CEO Ic=1mA, Ip=0 70 Vv wn | Collector-Base _ _ _ _ a Breakdown Voltage VY (BR) CBO} 1c = 100A, Tr=0 70 Vv H . Emitter-Collector | = = 2 Breakdown Voltage V (BR) ECO/TE=100zA, Ip=0 7 Vv e Collector Dark Current ICckO VcE=10V, Ip=0 1 50 nA | Collector Dark Current IcBo VcBp=10V, Ir=0 _ 0.1 20 nA Collector-Emitter Capacitance CcE V=0, f=1MHz 10 pF Current CNY17-2 63 | 125 Transfer CNY17-3 CTR Ip=10mA, VoRp=5V 100 | 200 % Ratio CNY17-4 160 320 Saturation Voltage VCE (sat)| IF=10mA, Ic =2.5mA 0.4 Vv A : fz] | Capacitance Input to np. a Output Cs V=0, f=1MHz 0.8 pF | Isolation Resistance Rg V=500V fio | | a Oo DC Isolation Voltage BVs DC 1 minute 4400 Vv . . VcE=10V, Ic=2mA Rise Fall Time ty / tf R= 1000 5 10 Ss Rise / Fall Time Photo VcBp=10V, Icp=50uA Diode t/t | Ry =1000 | 200) | ns 3 2001-06-01TOSHIBA CNY 17-2,CNY17-3,CNY 17-4 If Ta ALLOWABLE FORWARD CURRENT Ip (mA) 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) Irp DR PULSE WIDTHS 1 ys Ta=25C ra ALLOWABLE PULSE FORWARD CURRENT Ipp (mA) 10 107 107 10 DUTY CYCLE RATIO DR AVF/ATa IF FORWARD VOLTAGE TEMPERATURE COEFFICIENT AVp/ATa (mV/C) 0.1 0.3 0.5 1 3. 5 10 30 50 FORWARD CURRENT Ip (mA) Pc Ta 200 _ _ ao NO a oS oS oa DISSIPATION Pg (mW) ALLOWABLE COLLECTOR POWER rs oS 0 20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) Ip VE 1 Ta=25 50 a=25C 30 10 FORWARD CURRENT Ip (mA) 0.6 0.8 1.0 1.2 14 16 1.8 FORWARD VOLTAGE VF (V) IrFp VFP PULSE WIDTH= 10s REPETITIVE FREQUENCY =100Hz Ta=25C PULSE FORWARD CURRENT Ipp (mA) 0.6 1.0 1.4 1.8 2.2 2.6 PULSE FORWARD VOLTAGE Vp (V) 2001-06-01TOSHIBA COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ic (mA) Ic - IF Ta=25C Vor=10V 50| Vop=0.4V 30 10 SAMPLE A SAMPLE B 0.5 0.2 1 3 5 10 30.50 100 FORWARD CURRENT Ip (mA) Ic Ta 500 300 100 50 30 10 0.5 0.3 0.1 -60 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) CNY 17-2,CNY17-3,CNY 17-4 Ic /IF - Ip 400 Ta=25C Voe=10V 2 VoE=04V E800 v fa iS ~ [SAMPLE A ae vr z Y 4 f, 200 7 < Y a2 L a ~ TN S Sf a] z 100/74 aati ty SAMPLE B 0 | {4h 1 3 10 30 100 300 I (mA) COLLECTOR CURRENT 0.5 0.3 0.1 2 a COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) S Co J 0.01 60 FORWARD CURRENT Ip (mA) Ic VCE 20mA Ta=25C 2 4 6 8 10 12 14 COLLECTOR-EMITTER VOLTAGE Veg (V) VCE (sat) Ta -40 -20 90 20 40 60 80 = 100 AMBIENT TEMPERATURE Ta (C) 2001-06-01TOSHIBA CNY 17-2,CNY17-3,CNY 17-4 IcEO Ta Ip RBE 10 5| Vou=24V 3 Ta=100C z < q 3 8 1 & 2 se 05 B 03 Zz ST es 3 S = 0.05 ss Q . & 0.03 A ce 5 0.01 g 100k 1M 10M oo = BASE-EMITTER RESISTANCE RpR (2) oO 0 20 40 60 80 100 =: 120 AMBIENT TEMPERATURE Ta (C) SWITCHING CHARACTERISTICS Ry, RBE SWITCHING CHARACTERISTICS 1000 TURATED OPERATIO: TURATED OPERATIO Ip=5mA Roo Y Ta=25C Voc=5V 500 Ip g Vout os 300 z 100 = 50 = Z 30 _ en} w & S z= ica] wh = 10 & oO a 5 = E 3 = ww ta 1 0.5 1 3.85 10 30 50 3M 1M 300 100 30 10k LOAD RESISTANCE Ry, (kQ) BASE-EMITTER RESISTANCE Rpg (2) 6 2001-06-01TOSHIBA CNY 17-2,CNY17-3,CNY 17-4 RESTRICTIONS ON PRODUCT USE 000707EBC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The products described in this document are subject to the foreign exchange and foreign trade laws. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 7 2001-06-01