HCF4093BM1 - STMicroelectronics

1/7Septe mber 2001

■SCHMITT TRIGGER ACTION ON EACH

INPUT WI TH NO EXTERN AL C OMPONEN T S

■HYSTERESIS VOLTAGE TYPICALLY 0.9V at

VDD = 5V AND 2.3V at VDD = 10V

■NOISE IMMUNITY GREATER THAN 50%OF

VDD (Typ.)

■NO LIMIT ON INPUT RISE AND FALL TIMES

■QUIESCENT CURRENT SPECIFIED UP TO

20V

■STANDARDIZED SYMMETRICAL OUTPUT

CHARACTERISTICS

■5V, 10V AND 15V PARAMETRIC RATINGS

■INPUT LEAKAGE CURRENT

II = 100nA (MAX) AT VDD = 18V TA = 25°C

■100% TESTED FOR QUIESCENT CURRENT

■MEETS ALL REQUIREMENTS OF JEDEC

JESD13B " STANDARD SPECIFICATIONS

FOR DESCRI PTI ON OF B SERIES CM OS

DEVICES"

DESCRIPTION

The HCF4093B is a monolithic integrated circuit

fabricated in Metal Oxide Semiconductor

technology available in DIP and SOP packages.

The HCF4093B type consists of four schmitt

trigger circuits. Each circuit functions as a two

input NAND gate with schmitt trigger action on

both inputs. The gate switches at different points

for positive and negative going signals. The

difference between the positive voltage (VP) and

the nega tive volt age (VN) is defined as hysteresis

voltage (VH).

HCF4093B

QUAD 2 INPUT NAND SCHMITT TRIGGER

PIN CONNECTION

ORDER CODES

PACKAGE TUBE T & R

DIP HCF4093BEY

SOP HCF4093BM1 HCF4093M013TR

DIP SOP

HCF4093B

2/7

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is

not implied.

All vo l tage v al ues are refe rred t o VSS pin vo l tage .

RECOMMENDE D OPERATING CONDITIONS

PIN No SYMBOL NAME AND FUNCTION

1, 2, 5, 6, 8,

9, 12, 13 A, B, C, D, E,

F, G, H Data Inputs

3, 4, 10, 11 J, K, L, M Data Outputs

7VSS Negative Supply Voltage

14 VDD Positive Supply Voltage

INPUTS OUTPUTS

A, C, E, G B, D, F, H J, K, L, M

LLH

LHH

HLH

HHL

Symbol Parameter Value Unit

VDD Supply Voltage -0.5 to +22 V

VIDC Input Voltage -0.5 to VDD + 0.5 V

IIDC Input Current ± 10 mA

PDPower Dissipation per Package 200 mW

Power Dissipation per Output Transistor 100 mW

Top Operating Temperature -55 to +125 °C

Tstg Storage Temperature -65 to +150 °C

Symbol Parameter Value Unit

VDD Supply Voltage 3 to 20 V

VIInput Voltage 0 to VDD V

Top Operating Temperature -55 to 125 °C

HCF4093B

3/7

DC SPECIFICATI ONS

Th e Noi se Ma rgi n for bot h " 1" and " 0" le vel is : 1V min. with VDD=5V, 2V min. with VDD=10V, 2.5V min. with VDD=15V

a : In put on term i nals 1, 5, 8, 12 or 2, 6, 9, 13 ; ot her inputs to VDD.

b : In put on term i nals 1 and 2, 5 and 6, 8 and 9, or 12 and 13; other i nputs to VDD.

Symbol Parameter

Test Condition Value

Unit

(V) VO

(V) |IO|

(µA) VDD

(V)

TA = 25°C -40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

ILQuiescent Current 0/5 5 0.02 1 30 30

µA

0/10 10 0.02 2 60 60

0/15 15 0.02 4 120 120

0/20 20 0.04 20 600 600

VOH High Level Output

Voltage 0/5 <1 5 4.95 4.95 4.95 V0/10 <1 10 9.95 9.95 9.95

0/15 <1 15 14.95 14.95 14.95

VOL Low Level Output

Voltage 5/0 <1 5 0.05 0.05 0.05 V10/0 <1 10 0.05 0.05 0.05

15/0 <1 15 0.05 0.05 0.05

VPPositive Trigger

Threshold Voltage a 5 2.2 2.9 3.6 2.2 3.6 2.2 3.6

a 10 4.6 5.9 7.1 4.6 7.1 4.6 7.1

a 15 6.8 8.8 10.8 6.8 10.8 6.8 10.8

b 5 2.6 3.3 4.0 2.6 4 2.6 4

b 10 5.6 7 8.2 5.6 8.2 5.6 8.2

b 15 6.3 9.4 12.7 6.3 12.7 6.3 12.7

VNNegative Trigger

Threshold Voltage a 5 0.9 1.9 2.8 0.9 2.8 0.9 2.8

a 10 2.5 3.9 5.2 2.5 5.2 2.5 5.2

a 15 4 5.8 7.4 4 7.4 4 7.4

b 5 1.4 2.3 3.2 1.4 3.2 1.4 3.2

b 10 3.4 5.1 6.6 3.4 6.6 3.4 6.6

b 15 4.8 7.3 9.6 4.8 9.6 4.8 9.6

VHHysteresis Voltage a 5 0.3 0.9 1.6 0.3 1.6 0.3 1.6

a 10 1.2 2.3 3.4 1.2 3.4 1.2 3.4

a 15 1.6 3.5 5 1.6 5 1.6 5

b 5 0.3 0.9 1.6 0.3 1.6 0.3 1.6

b 10 1.2 2.3 3.4 1.2 3.4 1.2 3.4

b 15 1.6 3.5 5 1.6 5 1.6 5

IOH Output Drive

Current 0/5 2.5 <1 5 -1.36 -3.2 -1.15 -1.1

0/5 4.6 <1 5 -0.44 -1 -0.36 -0.36

0/10 9.5 <1 10 -1.1 -2.6 -0.9 -0.9

0/15 13.5 <1 15 -3.0 -6.8 -2.4 -2.4

IOL Output Sink

Current 0/5 0.4 <1 5 0.44 1 0.36 0.36 mA0/10 0.5 <1 10 1.1 2.6 0.9 0.9

0/15 1.5 <1 15 3.0 6.8 2.4 2.4

IIInput Leakage

Current 0/18 Any Input 18 ±10-5 ±0.1 ±1±1µA

CIInput Capacitance Any Input 5 7.5 pF

HCF4093B

4/7

DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)

(* ) T ypical te m peratur e coef ficient for all V DD value is 0.3 %/°C.

TEST CIRCUIT

CL = 50p F or equi valent (includes jig and probe ca pacitanc e)

RL = 200KΩ

RT = ZOUT of pulse generator (typically 50Ω)

WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)

Symbol Parameter Test Condition Value (*) Unit

VDD (V) Min. Typ. Max.

tPLH tPHL Propagation Delay Time 5 190 380 ns10 90 180

15 65 130

tTLH tTHL Output Transition Time 5 100 200 ns10 50 100

15 40 80

HCF4093B

5/7

DIM. mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065

b 0.5 0.020

b1 0.25 0.010

D 20 0.787

E 8.5 0.335

e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

I 5.1 0.201

L 3.3 0.130

Z 1.27 2.54 0.050 0.100

Plastic DIP-14 MECHANICA L DATA

P001A

HCF4093B

6/7

DIM. mm. inch

MIN. TYP MAX. MIN. TYP. MAX.

A 1.75 0.068

a1 0.1 0.2 0.003 0.007

a2 1.65 0.064

b 0.35 0.46 0.013 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.019

c1 45° (typ.)

D 8.55 8.75 0.336 0.344

E 5.8 6.2 0.228 0.244

e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.149 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.019 0.050

M 0.68 0.026

S8° (max.)

SO-14 MECHANICAL DATA

PO13G

HCF4093B

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